NSV60600MZ4T1G Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NSV60600MZ4T1G
Código: 60600
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 2 W
Tensión colector-base (Vcb): 100 V
Tensión colector-emisor (Vce): 60 V
Tensión emisor-base (Veb): 6 V
Corriente del colector DC máxima (Ic): 6 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 100 MHz
Capacitancia de salida (Cc): 60 pF
Ganancia de corriente contínua (hFE): 70
Encapsulados: SOT223
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NSV60600MZ4T1G datasheet
nsv60600mz4.pdf
NSS60600MZ4, NSV60600MZ4T1G, NSV60600MZ4T3G 60 V, 6.0 A, Low VCE(sat) PNP Transistor http //onsemi.com ON Semiconductor s e2PowerEdge family of low VCE(sat) transistors are surface mount devices featuring ultra low saturation -60 VOLTS, 6.0 AMPS voltage (VCE(sat)) and high current gain capability. These are designed 2.0 WATTS for use in low voltage, high speed switching application
nsv60601mz4.pdf
NSS60601MZ4, NSV60601MZ4T1G, NSV60601MZ4T3G 60 V, 6.0 A, Low VCE(sat) NPN Transistor http //onsemi.com ON Semiconductor s e2PowerEdge family of low VCE(sat) transistors are surface mount devices featuring ultra low saturation 60 VOLTS, 6.0 AMPS voltage (VCE(sat)) and high current gain capability. These are designed 2.0 WATTS for use in low voltage, high speed switching applications
nsv60100dmtwtbg.pdf
NSS60100DMT 60 V, 1 A, Low VCE(sat) PNP Transistors ON Semiconductor s e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These www.onsemi.com are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important.
nsv60101dmtwtbg.pdf
NSS60101DMT 60 V, 1 A, Low VCE(sat) NPN Transistors ON Semiconductor s e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These www.onsemi.com are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important.
Otros transistores... NSVMUN2212T1G, NSVMUN2233T1G, NSVMUN2237T1G, NSV40501UW3T2G, NSV60100DMTWTBG, NSV60101DMTWTBG, NSV60200LT1G, NSV60201LT1G, TIP31C, NSV60600MZ4T3G, NSV60601MZ4T1G, NSV60601MZ4T3G, NSV9435T1G, NSVBC817-16LT1G, NSVBC818-40LT1G, NSVBC846BM3T5G, NSVBC847BDW1T2G
History: GI2923 | D965A
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