NSS20101J Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NSS20101J
Código: AA
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.26 W
Tensión colector-base (Vcb): 40 V
Tensión colector-emisor (Vce): 20 V
Tensión emisor-base (Veb): 6 V
Corriente del colector DC máxima (Ic): 1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 350 MHz
Capacitancia de salida (Cc): 6 pF
Ganancia de corriente contínua (hFE): 200
Encapsulados: SC89
Búsqueda de reemplazo de NSS20101J
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NSS20101J datasheet
..1. Size:105K onsemi
nss20101j nsv20101j.pdf 
NSS20101J, NSV20101J 20 V, 1.0 A, Low VCE(sat) NPN Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These http //onsemi.com are designed for use in low voltage, high speed switching applications where affordable efficient energy control is
..2. Size:109K onsemi
nss20101j.pdf
NSS20101J, NSV20101J 20 V, 1.0 A, Low VCE(sat) NPN Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These http //onsemi.com are designed for use in low voltage, high speed switching applications where affordable efficient energy control is
9.1. Size:82K onsemi
nss20601cf8-d.pdf
NSS20601CF8T1G 20 V, 8.0 A, Low VCE(sat) NPN Transistor ON Semiconductor's e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications http //onsemi.com where affordable efficient energy control is importa
9.2. Size:202K onsemi
nss20200dmt.pdf
DATA SHEET www.onsemi.com Low VCE(sat) PNP Transistors 20 Volt, 2 Amp PNP Low VCE(sat) Transistors 20 V, 2 A NSS20200DMT MARKING DIAGRAM onsemi s e2PowerEdge family of low VCE(sat) transistors are 1 6 miniature surface mount devices featuring ultra low saturation voltage WDFN6 AT MG 2 5 (VCE(sat)) and high current gain capability. These are designed for use CASE 506AN G 3 4 1
9.3. Size:83K onsemi
nss20601cf8t1g.pdf
NSS20601CF8T1G 20 V, 8.0 A, Low VCE(sat) NPN Transistor ON Semiconductor's e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications http //onsemi.com where affordable efficient energy control is importa
9.4. Size:103K onsemi
nss20500uw3.pdf
NSS20500UW3 20 V, 7.0 A, Low VCE(sat) PNP Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These http //onsemi.com are designed for use in low voltage, high speed switching applications where affordable efficient energy control is importan
9.5. Size:47K onsemi
nss20201mr6.pdf
NSS20201MR6T1G 20 V, 3 A, Low VCE(sat) NPN Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These http //onsemi.com are designed for use in low voltage, high speed switching applications where affordable efficient energy control is importa
9.6. Size:118K onsemi
nss20201mr6t1g.pdf
NSS20201MR6T1G 20 V, 3 A, Low VCE(sat) NPN Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These http //onsemi.com are designed for use in low voltage, high speed switching applications where affordable efficient energy control is importa
9.7. Size:119K onsemi
nss20201lt1g.pdf
NSS20201LT1G, NSV20201LT1G 20 V, 4.0 A, Low VCE(sat) NPN Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) http //onsemi.com transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These 20 VOLTS 4.0 AMPS are designed for use in low voltage, high speed switching applications NPN LOW VCE(sat) T
9.8. Size:197K onsemi
nss20300mr6t1g.pdf
NSS20300MR6T1G 20 V, 5 A, Low VCE(sat) PNP Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These http //onsemi.com are designed for use in low voltage, high speed switching applications where affordable efficient energy control is importa
9.9. Size:125K onsemi
nss20300mr6.pdf
NSS20300MR6T1G 20 V, 5 A, Low VCE(sat) PNP Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These http //onsemi.com are designed for use in low voltage, high speed switching applications where affordable efficient energy control is importa
9.10. Size:125K onsemi
nss20201l-d.pdf
NSS20201LT1G 20 V, 4.0 A, Low VCE(sat) NPN Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications http //onsemi.com where affordable efficient energy control is importa
9.11. Size:189K onsemi
nss20201lt1g nsv20201lt1g.pdf
NSS20201LT1G, NSV20201LT1G 20 V, 4.0 A, Low VCE(sat) NPN Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) www.onsemi.com transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These 20 VOLTS 4.0 AMPS are designed for use in low voltage, high speed switching applications NPN LOW VCE(sat) TRAN
9.12. Size:82K onsemi
nss20501uw3-d.pdf
NSS20501UW3T2G 20 V, 7.0 A, Low VCE(sat) NPN Transistor ON Semiconductor's e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications http //onsemi.com where affordable efficient energy control is importa
9.13. Size:106K onsemi
nss20600cf8.pdf
NSS20600CF8T1G 20 V, 7.0 A, Low VCE(sat) PNP Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important. http //onsem
9.14. Size:126K onsemi
nss20200l-d.pdf
NSS20200LT1G 20 V, 4.0 A, Low VCE(sat) PNP Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications http //onsemi.com where affordable efficient energy control is importa
9.15. Size:161K onsemi
nss20501uw3.pdf
NSS20501UW3 20 V, 7.0 A, Low VCE(sat) NPN Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These http //onsemi.com are designed for use in low voltage, high speed switching applications where affordable efficient energy control is importan
9.16. Size:126K onsemi
nss20200lt1g.pdf
NSS20200LT1G, NSV20200LT1G 20 V, 4.0 A, Low VCE(sat) PNP Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) http //onsemi.com transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These -20 VOLTS are designed for use in low voltage, high speed switching applications 4.0 AMPS where affordable
9.17. Size:190K onsemi
nss20200lt1g nsv20200lt1g.pdf
NSS20200LT1G, NSV20200LT1G 20 V, 4.0 A, Low VCE(sat) PNP Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) www.onsemi.com transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These -20 VOLTS are designed for use in low voltage, high speed switching applications 4.0 AMPS where affordable ef
9.18. Size:101K onsemi
nss20200w6.pdf
NSS20200W6 20 V, 3.0 A, Low VCE(sat) PNP Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications http //onsemi.com where affordable efficient energy control is important
Otros transistores... NSVBC848CLT1G, NSVBC850BLT1G, NSVBC850CLT1G, NSVBC857BLT3G, NSVBC857BTT1G, NSVBC857CWT1G, NSVBC858BLT1G, NSVBC858CLT1G, BC558, NSS20200LT1G, NSS20201LT1G, NSS20201MR6, NSS40300MZ4T1G, NSS40300MZ4T3G, NSS40301MDR2G, NSS40301MZ4T1G, NSS40301MZ4T3G
