NSS40500UW3T2G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NSS40500UW3T2G
Código: VA
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 1.5 W
Tensión colector-base (Vcb): 40 V
Tensión colector-emisor (Vce): 40 V
Tensión emisor-base (Veb): 7 V
Corriente del colector DC máxima (Ic): 5 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 100 MHz
Capacitancia de salida (Cc): 150 pF
Ganancia de corriente contínua (hfe): 150
Paquete / Cubierta: WDFN3
Búsqueda de reemplazo de NSS40500UW3T2G
NSS40500UW3T2G Datasheet (PDF)
nss40500uw3t2g.pdf

NSS40500UW3T2G40 V, 6.0 A, Low VCE(sat)PNP TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Thesehttp://onsemi.comare designed for use in low voltage, high speed switching applicationswhere affordable efficient energy control is impor
nss40501uw3t2g.pdf

NSS40501UW3T2G40 V, 7.0 A, Low VCE(sat)NPN TransistorON Semiconductor's e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Theseare designed for use in low voltage, high speed switching applicationshttp://onsemi.comwhere affordable efficient energy control is importa
nss40501uw3 nsv40501uw3.pdf

NSS40501UW3,NSV40501UW340 V, 5.0 A, Low VCE(sat)NPN TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Thesehttp://onsemi.comare designed for use in low voltage, high speed switching applicationswhere affordable efficient energy contr
nss40501uw3-d.pdf

NSS40501UW3T2G40 V, 7.0 A, Low VCE(sat)NPN TransistorON Semiconductor's e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Theseare designed for use in low voltage, high speed switching applicationshttp://onsemi.comwhere affordable efficient energy control is importa
Otros transistores... NSS20201LT1G , NSS20201MR6 , NSS40300MZ4T1G , NSS40300MZ4T3G , NSS40301MDR2G , NSS40301MZ4T1G , NSS40301MZ4T3G , NSS40302PDR2G , 13005 , NSS40501UW3T2G , NSS40600CF8T1G , NSS40601CF8T1G , NSS60100DMT , NSS60101DMT , NSS60600MZ4T1G , NSS60600MZ4T3G , NSS60601MZ4T1G .
History: TBC850 | CTN391 | 2SC3207 | DDTA144VE
History: TBC850 | CTN391 | 2SC3207 | DDTA144VE



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