NSS60601MZ4T1G Todos los transistores

 

NSS60601MZ4T1G Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NSS60601MZ4T1G
   Código: 60601
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 2 W
   Tensión colector-base (Vcb): 100 V
   Tensión colector-emisor (Vce): 60 V
   Tensión emisor-base (Veb): 6 V
   Corriente del colector DC máxima (Ic): 6 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 100 MHz
   Capacitancia de salida (Cc): 37 pF
   Ganancia de corriente contínua (hfe): 120
   Paquete / Cubierta: SOT223
 

 Búsqueda de reemplazo de NSS60601MZ4T1G

   - Selección ⓘ de transistores por parámetros

 

NSS60601MZ4T1G datasheet

 ..1. Size:110K  onsemi
 nss60601mz4t1g.pdf pdf_icon

NSS60601MZ4T1G

NSS60601MZ4, NSV60601MZ4T1G, NSV60601MZ4T3G 60 V, 6.0 A, Low VCE(sat) NPN Transistor http //onsemi.com ON Semiconductor s e2PowerEdge family of low VCE(sat) transistors are surface mount devices featuring ultra low saturation 60 VOLTS, 6.0 AMPS voltage (VCE(sat)) and high current gain capability. These are designed 2.0 WATTS for use in low voltage, high speed switching applications

 3.1. Size:107K  onsemi
 nss60601mz4-d.pdf pdf_icon

NSS60601MZ4T1G

NSS60601MZ4 60 V, 6.0 A, Low VCE(sat) NPN Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) transistors are surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications where http //onsemi.com affordable efficient energy control is important. Typica

 3.2. Size:108K  onsemi
 nss60601mz4.pdf pdf_icon

NSS60601MZ4T1G

NSS60601MZ4 60 V, 6.0 A, Low VCE(sat) NPN Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) transistors are surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These are designed http //onsemi.com for use in low voltage, high speed switching applications where affordable efficient energy control is important. 60 VOL

 7.1. Size:69K  onsemi
 nss60600mz4.pdf pdf_icon

NSS60601MZ4T1G

NSS60600MZ4 60 V, 6.0 A, Low VCE(sat) PNP Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) transistors are surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications where www.onsemi.com affordable efficient energy control is important. Typical a

MOSTRAR MÁS

Otros transistores... NSS40500UW3T2G , NSS40501UW3T2G , NSS40600CF8T1G , NSS40601CF8T1G , NSS60100DMT , NSS60101DMT , NSS60600MZ4T1G , NSS60600MZ4T3G , D209L , NSS60601MZ4T3G , NSTB1002DXV5 , NSTB1005DXV5 , NSTB60BDW1T1G , NSVB114YPDXV6T1G , NSVB123JPDXV6T1G , NSVB124XPDXV6T1G , NSVB143TPDXV6T1G .

 

 
Back to Top

 


 
.