NSS60601MZ4T3G Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NSS60601MZ4T3G

Código: 60601

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 2 W

Tensión colector-base (Vcb): 100 V

Tensión colector-emisor (Vce): 60 V

Tensión emisor-base (Veb): 6 V

Corriente del colector DC máxima (Ic): 6 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 100 MHz

Capacitancia de salida (Cc): 37 pF

Ganancia de corriente contínua (hFE): 120

Encapsulados: SOT223

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NSS60601MZ4T3G datasheet

 2.1. Size:110K  onsemi
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NSS60601MZ4T3G

NSS60601MZ4, NSV60601MZ4T1G, NSV60601MZ4T3G 60 V, 6.0 A, Low VCE(sat) NPN Transistor http //onsemi.com ON Semiconductor s e2PowerEdge family of low VCE(sat) transistors are surface mount devices featuring ultra low saturation 60 VOLTS, 6.0 AMPS voltage (VCE(sat)) and high current gain capability. These are designed 2.0 WATTS for use in low voltage, high speed switching applications

 3.1. Size:107K  onsemi
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NSS60601MZ4T3G

NSS60601MZ4 60 V, 6.0 A, Low VCE(sat) NPN Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) transistors are surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications where http //onsemi.com affordable efficient energy control is important. Typica

 3.2. Size:108K  onsemi
nss60601mz4.pdf pdf_icon

NSS60601MZ4T3G

NSS60601MZ4 60 V, 6.0 A, Low VCE(sat) NPN Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) transistors are surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These are designed http //onsemi.com for use in low voltage, high speed switching applications where affordable efficient energy control is important. 60 VOL

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