NSVB124XPDXV6T1G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NSVB124XPDXV6T1G
Código: 34
Material: Si
Polaridad de transistor: Pre-Biased-NPN*PNP
Resistencia de Entrada Base R1 = 22 kOhm
Resistencia Base-Emisor R2 = 47 kOhm
Ratio típica de resistencia R1/R2 = 0.47
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.36 W
Tensión colector-base (Vcb): 50 V
Tensión colector-emisor (Vce): 50 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 80
Paquete / Cubierta: SOT563
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NSVB124XPDXV6T1G Datasheet (PDF)
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History: SFT6678Z | D11C3F1 | NSVEMX1DXV6T1G | 2SD1435K | UNR5112 | 2N5423 | CH3906TGP
History: SFT6678Z | D11C3F1 | NSVEMX1DXV6T1G | 2SD1435K | UNR5112 | 2N5423 | CH3906TGP



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