NSVB143ZPDXV6T1G Todos los transistores

 

NSVB143ZPDXV6T1G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NSVB143ZPDXV6T1G
   Código: 33
   Material: Si
   Polaridad de transistor: Pre-Biased-NPN*PNP
   Resistencia de Entrada Base R1 = 4.7 kOhm
   Resistencia Base-Emisor R2 = 47 kOhm
   Ratio típica de resistencia R1/R2 = 0.1

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.36 W
   Tensión colector-base (Vcb): 50 V
   Tensión colector-emisor (Vce): 50 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Ganancia de corriente contínua (hfe): 80
   Paquete / Cubierta: SOT563

 Búsqueda de reemplazo de transistor bipolar NSVB143ZPDXV6T1G

 

NSVB143ZPDXV6T1G Datasheet (PDF)

 0.1. Size:165K  onsemi
nsvb143zpdxv6t1g.pdf

NSVB143ZPDXV6T1G
NSVB143ZPDXV6T1G

NSBC114EPDXV6T1G,NSVBC114EPDXV6T1G SeriesDual Bias ResistorTransistorsNPN and PNP Silicon Surface MountTransistors with Monolithic Biashttp://onsemi.comResistor NetworkThe BRT (Bias Resistor Transistor) contains a single transistor witha monolithic bias network consisting of two resistors; a series baseresistor and a base-emitter resistor. These digital transistors areSOT-

 7.1. Size:165K  onsemi
nsvb143tpdxv6t1g.pdf

NSVB143ZPDXV6T1G
NSVB143ZPDXV6T1G

NSBC114EPDXV6T1G,NSVBC114EPDXV6T1G SeriesDual Bias ResistorTransistorsNPN and PNP Silicon Surface MountTransistors with Monolithic Biashttp://onsemi.comResistor NetworkThe BRT (Bias Resistor Transistor) contains a single transistor witha monolithic bias network consisting of two resistors; a series baseresistor and a base-emitter resistor. These digital transistors areSOT-

 8.1. Size:165K  onsemi
nsvb144epdxv6t1g.pdf

NSVB143ZPDXV6T1G
NSVB143ZPDXV6T1G

NSBC114EPDXV6T1G,NSVBC114EPDXV6T1G SeriesDual Bias ResistorTransistorsNPN and PNP Silicon Surface MountTransistors with Monolithic Biashttp://onsemi.comResistor NetworkThe BRT (Bias Resistor Transistor) contains a single transistor witha monolithic bias network consisting of two resistors; a series baseresistor and a base-emitter resistor. These digital transistors areSOT-

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