NSV40301MDR2G Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NSV40301MDR2G

Código: N40301

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.58 W

Tensión colector-base (Vcb): 40 V

Tensión colector-emisor (Vce): 40 V

Tensión emisor-base (Veb): 6 V

Corriente del colector DC máxima (Ic): 3 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 100 MHz

Capacitancia de salida (Cc): 40 pF

Ganancia de corriente contínua (hFE): 200

Encapsulados: SOIC8

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NSV40301MDR2G datasheet

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 nsv40301mdr2g.pdf pdf_icon

NSV40301MDR2G

NSS40301MDR2G Dual Matched 40 V, 6.0 A, Low VCE(sat) NPN Transistor These transistors are part of the ON Semiconductor e2PowerEdge family of Low VCE(sat) transistors. They are assembled to create a pair of devices highly matched in all parameters, including ultra low saturation voltage VCE(sat), high current gain and Base/Emitter turn on http //onsemi.com voltage. Typical applications

 5.1. Size:88K  onsemi
 nsv40301mz4t1g.pdf pdf_icon

NSV40301MDR2G

NSS40301MZ4 Bipolar Power Transistors 40 V, 3.0 A, Low VCE(sat) NPN Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) transistors are surface mount devices featuring ultra low saturation http //onsemi.com voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications where NPN TRANSISTOR affordable effic

 7.1. Size:132K  onsemi
 nsv40300mdr2g.pdf pdf_icon

NSV40301MDR2G

NSS40300MDR2G, NSV40300MDR2G Dual Matched 40 V, 6.0 A, Low VCE(sat) PNP Transistor These transistors are part of the ON Semiconductor e2PowerEdge http //onsemi.com family of Low VCE(sat) transistors. They are assembled to create a pair of devices highly matched in all parameters, including ultra low 40 VOLTS saturation voltage VCE(sat), high current gain and Base/Emitter turn on 6.0 A

 7.2. Size:98K  onsemi
 nsv40302pdr2g.pdf pdf_icon

NSV40301MDR2G

NSS40302PDR2G Complementary 40 V, 6.0 A, Low VCE(sat) Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) transistors are surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These are designed www.onsemi.com for use in low voltage, high speed switching applications where affordable efficient energy control is important

MOSTRAR MÁS

Otros transistores... NSVBC124EDXV6T1G, NSV2SA2029M3T5G, NSV2SC5658M3T5G, NSV40200LT1G, NSV40200UW6T1G, NSV40201LT1G, NSV40300MDR2G, NSV40300MZ4T1G, BD136, NSV40301MZ4T1G, NSV40302PDR2G, NSBC144EDP6, NSBC144EDXV6, NSBC144EF3, NSBC144EPDP6, NSBC144EPDXV6, NSBC144TF3