NSV40301MZ4T1G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: NSV40301MZ4T1G
   Código: 40301
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

   Disipación total del dispositivo (Pc): 2 W
   Tensión colector-base (Vcb): 40 V
   Tensión colector-emisor (Vce): 40 V
   Tensión emisor-base (Veb): 6 V
   Corriente del colector DC máxima (Ic): 3 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   Transición de frecuencia (ft): 100 MHz
   Capacitancia de salida (Cc): 25 pF
   Ganancia de corriente contínua (hfe): 200
   Paquete / Cubierta: SOT223

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NSV40301MZ4T1G Datasheet (PDF)

..1. Size:88K onsemi
nsv40301mz4t1g.pdf

NSS40301MZ4Bipolar Power Transistors40 V, 3.0 A, Low VCE(sat)NPN TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are surface mount devices featuring ultra low saturation http://onsemi.comvoltage (VCE(sat)) and high current gain capability. These are designedfor use in low voltage, high speed switching applications where NPN TRANSISTORaffordable effic

5.1. Size:106K onsemi
nsv40301mdr2g.pdf

NSS40301MDR2GDual Matched 40 V, 6.0 A,Low VCE(sat) NPN TransistorThese transistors are part of the ON Semiconductor e2PowerEdgefamily of Low VCE(sat) transistors. They are assembled to create a pairof devices highly matched in all parameters, including ultra lowsaturation voltage VCE(sat), high current gain and Base/Emitter turn onhttp://onsemi.comvoltage.Typical applications

7.1. Size:132K onsemi
nsv40300mdr2g.pdf

NSS40300MDR2G,NSV40300MDR2GDual Matched 40 V, 6.0 A,Low VCE(sat) PNP TransistorThese transistors are part of the ON Semiconductor e2PowerEdgehttp://onsemi.comfamily of Low VCE(sat) transistors. They are assembled to create a pairof devices highly matched in all parameters, including ultra low40 VOLTSsaturation voltage VCE(sat), high current gain and Base/Emitter turn on6.0 A

7.2. Size:98K onsemi
nsv40302pdr2g.pdf

NSS40302PDR2GComplementary 40 V, 6.0 A,Low VCE(sat) TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are surface mount devices featuring ultra low saturationvoltage (VCE(sat)) and high current gain capability. These are designedwww.onsemi.comfor use in low voltage, high speed switching applications whereaffordable efficient energy control is important

7.3. Size:89K onsemi
nsv40300mz4t1g.pdf

NSS40300MZ4Bipolar Power Transistors40 V, 3.0 A, Low VCE(sat)PNP TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are surface mount devices featuring ultra low saturation http://onsemi.comvoltage (VCE(sat)) and high current gain capability. These are designedfor use in low voltage, high speed switching applications where PNP TRANSISTORaffordable effic

7.4. Size:219K onsemi
nss40300mdr2g nsv40300mdr2g.pdf