NSBC124EPDP6 Todos los transistores

 

NSBC124EPDP6 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NSBC124EPDP6
   Código: R
   Material: Si
   Polaridad de transistor: Pre-Biased-NPN*PNP
   Resistencia de Entrada Base R1 = 22 kOhm
   Resistencia Base-Emisor R2 = 22 kOhm
   Ratio típica de resistencia R1/R2 = 1

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.27 W
   Tensión colector-base (Vcb): 50 V
   Tensión colector-emisor (Vce): 50 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Ganancia de corriente contínua (hfe): 60
   Paquete / Cubierta: SOT963

 Búsqueda de reemplazo de transistor bipolar NSBC124EPDP6

 

NSBC124EPDP6 Datasheet (PDF)

 ..1. Size:110K  onsemi
nsbc124epdp6.pdf

NSBC124EPDP6
NSBC124EPDP6

MUN5312DW1,NSBC124EPDXV6,NSBC124EPDP6Complementary BiasResistor Transistorswww.onsemi.comR1 = 22 kW, R2 = 22 kWNPN and PNP Transistors with MonolithicPIN CONNECTIONSBias Resistor Network(3) (2) (1)This series of digital transistors is designed to replace a singledevice and its external resistor bias network. The Bias ResistorTransistor (BRT) contains a single transisto

 4.1. Size:110K  onsemi
nsbc124epdxv6.pdf

NSBC124EPDP6
NSBC124EPDP6

MUN5312DW1,NSBC124EPDXV6,NSBC124EPDP6Complementary BiasResistor Transistorswww.onsemi.comR1 = 22 kW, R2 = 22 kWNPN and PNP Transistors with MonolithicPIN CONNECTIONSBias Resistor Network(3) (2) (1)This series of digital transistors is designed to replace a singledevice and its external resistor bias network. The Bias ResistorTransistor (BRT) contains a single transisto

 6.1. Size:155K  onsemi
nsbc124ef3.pdf

NSBC124EPDP6
NSBC124EPDP6

MUN2212, MMUN2212L,MUN5212, DTC124EE,DTC124EM3, NSBC124EF3Digital Transistors (BRT)R1 = 22 kW, R2 = 22 kWhttp://onsemi.comNPN Transistors with Monolithic BiasPIN CONNECTIONSResistor NetworkPIN 3COLLECTORThis series of digital transistors is designed to replace a single(OUTPUT)PIN 1device and its external resistor bias network. The Bias Resistor R1BASETransistor (

 6.2. Size:146K  onsemi
nsbc124edp6.pdf

NSBC124EPDP6
NSBC124EPDP6

MUN5212DW1,NSBC124EDXV6,NSBC124EDP6Dual NPN Bias ResistorTransistorshttp://onsemi.comR1 = 22 kW, R2 = 22 kWPIN CONNECTIONSNPN Transistors with Monolithic BiasResistor Network(3) (2) (1)This series of digital transistors is designed to replace a singleR1 R2device and its external resistor bias network. The Bias ResistorTransistor (BRT) contains a single transistor wit

 6.3. Size:146K  onsemi
nsbc124edxv6.pdf

NSBC124EPDP6
NSBC124EPDP6

MUN5212DW1,NSBC124EDXV6,NSBC124EDP6Dual NPN Bias ResistorTransistorshttp://onsemi.comR1 = 22 kW, R2 = 22 kWPIN CONNECTIONSNPN Transistors with Monolithic BiasResistor Network(3) (2) (1)This series of digital transistors is designed to replace a singleR1 R2device and its external resistor bias network. The Bias ResistorTransistor (BRT) contains a single transistor wit

Otros transistores... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D882P , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

 

 
Back to Top

 


NSBC124EPDP6
  NSBC124EPDP6
  NSBC124EPDP6
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores:

BJT: GN1A3Q | D965-KEHE | 2SD662B | 2SD661A | 2SC3080 | S9018L | S9012J | 2SA73L | 2SA73H | 2SA1015H | WT955 | TS13005CK | TP5001P3 | SS8550W-L | SS8550W-J | SS8550W-H | SS8550E | SS8550D | SS8550C | SS8050E | SS8050D

 

 

 
Back to Top