A684 Todos los transistores

A684 PNP silicon APPLICATION AF Frequency Amplifier and Driver Application. MAXIMUM RATINGS Ta 25 PARAMETER SYMBOL RATING UNIT Collector-base voltage VCBO -60 V Collector-emitter voltage VCEO -50 V Emitter-base voltage VEBO -5 V Collector current IC -1 A TO-92L 1 Collector Power Dissipation PC 1W 1. Emitter 2. Collector 3. Base Junct

Transistor 2SA683, 2SA684 Silicon PNP epitaxial planer type For low-frequency power amplification and driver amplification Unit mm Complementary to 2SC1383 and 2SC1384 5.9 0.2 4.9 0.2 Features Complementary pair with 2SC1383 and 2SC1384. Allowing supply with the radial taping. 0.7 0.1 Absolute Maximum Ratings (Ta=25 C) 2.54 0.15 Parameter Symbol Ratings Unit Collector to

Transistor 2SA683, 2SA684 Silicon PNP epitaxial planer type For low-frequency power amplification and driver amplification Unit mm Complementary to 2SC1383 and 2SC1384 5.9 0.2 4.9 0.2 Features Complementary pair with 2SC1383 and 2SC1384. Allowing supply with the radial taping. 0.7 0.1 Absolute Maximum Ratings (Ta=25 C) 2.54 0.15 Parameter Symbol Ratings Unit Collector to

UNISONIC TECHNOLOGIES CO., LTD 2SA684 PNP SILICON TRANSISTOR PNP SILICON TRANSISTOR DESCRIPTION The UTC 2SA684 is power amplifier and driver. FEATURES * Automatic insertion by radial taping possible. * Complementary pair with 2SC1384. ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 - 2SA684G-x-AB3-R SOT-89 B C

2SA684 -1A , -60V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92L FEATURE G H Automatic insertion by radial taping possible. 1Emitter 1 1 1 2Collector 2 2 2 Complementary pair with 2SC1384L. 3Base 3 3 3 J A D CLASSIFICATION OF hFE Millimeter REF. Min. Max

2SA684 TO-92L Transistors (PNP) TO-92L 1. EMITTER 2. COLLECTOR 3. BASE 2 3 4.700 5.100 1 Features 7.800 8.200 Automatic insertion by radial taping possible. 0.600 0.800 Complementary pair with 2SC1384. 0.350 0.550 13.800 14.200 MAXIMUM RATINGS(TA=25 unless otherwise noted) Dimensions in inches and (millimeters) 1.270 TYP 2.440 Symbol Parameter 2.640 Va

Spec. No. C232K3 Issued Date 2013.04.03 CYStech Electronics Corp. Revised Date 2013.12.25 Page No. 1/8 PNP Epitaxial Planar Transistor BTA684K3 Features Low V , V = -177mV (Typ.) @ I /I =-1A/-100mA CE(SAT) CE(SAT) C B High breakdown voltage, BV =-60V CEO Complementary to BTC1384K3 Pb-free lead plating and halogen-free package Symbol Outline BTA

ST 2SA683 / 2SA684 PNP Silicon Epitaxial Planar Transistor for low frequency power amplification and driver amplification The transistor is subdivided into three group, Q, R and S according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. 1. Emitter 2. Collector 3. Base TO-92 Plastic Package O Absolute Maximu