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A817 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: A817
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.8 W
   Tensión colector-base (Vcb): 80 V
   Tensión colector-emisor (Vce): 80 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 0.4 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 100 MHz
   Capacitancia de salida (Cc): 14 pF
   Ganancia de corriente contínua (hfe): 70
   Paquete / Cubierta: TO92L

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A817 Datasheet (PDF)

 ..1. Size:244K  fgx
a817.pdf

A817

A817 PNP silicon APPLICATION: General Purpose Applications.MAXIMUM RATINGSTa25PARAMETER SYMBOL RATING UNITCollector-base voltage VCBO -80 VCollector-emitter voltage VCEO -80 VTO-92L1Emitter-base voltage VEBO -5 V1. Emitter 2. Collector 3. BaseCollector current IC -0.4 ACollector Power Dissipation PC 0.8 WJunction Te

 0.1. Size:209K  toshiba
2sa817.pdf

A817
A817

2SA817 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA817 Audio Frequency Amplifier Applications Unit: mm Complementary to 2SC1627. Suitable for driver of 20~25 watts audio amplifiers. Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO -80 VCollector-emitter voltage VCEO -80 VEmitter-base voltage VEB

 0.2. Size:173K  toshiba
2sa817a.pdf

A817
A817

 0.3. Size:319K  vishay
sia817edj.pdf

A817
A817

New ProductSiA817EDJVishay SiliconixP-Channel 30 V (D-S) MOSFET with Schottky DiodeFEATURESPRODUCT SUMMARY LITTLE FOOT Plus Schottky Power MOSFETQg Thermally Enhanced PowerPAKVDS (V) RDS(on) () Max. ID (A)(Typ.)SC-70 Package0.065 at VGS = - 10 V - 4.5a- Small Footprint Area0.080 at VGS = - 4.5 V - 4.5a- Low On-Resistance- 300.092 at VGS = - 3.7

 0.4. Size:232K  lge
2sa817a to-92mod.pdf

A817
A817

2SA817A TO-92MOD Transistor (PNP)TO-92MOD1. EMITTER 1 22. COLLECTOR 3 3. BASE 5.8006.200Features 8.4008.800 Complementary to 2SC1627A. 0.9001.100 Driver Stage Application of 30 to 0.4000.60035 Watts Amplifiers. 13.80014.2001.500 TYP2.900 Dimensions in inches and (millimeters)MAXIMUM RATINGS (TA=25 unless otherwise noted) 3.1000.000 1.600

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: 2SB892S | 2N573

 

 
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History: 2SB892S | 2N573

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