SK3118 Todos los transistores

 ..1. Size:70K  njs
 sk3118.pdf

 9.1. Size:79K  1
 2sk3112-s 2sk3112-zj 2sk3112.pdf

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3112 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ORDERING INFORMATION The 2SK3112 is N-channel MOS FET device that features a PART NUMBER PACKAGE low on-state resistance and excellent switching characteristics, 2SK3112 TO-220AB and designed for high voltage applications such as DC/DC 2SK3112-S TO-262 converter, actuator d

 9.2. Size:69K  1
 2sk3113-z 2sk3113.pdf

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3113 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ORDERING INFORMATION The 2SK3113 is N-channel DMOS FET device that PART NUMBER PACKAGE features a low gate charge and excellent switching 2SK3113 TO-251 characteristic, and designed for high voltage applications 2SK3113-Z TO-252 such as switching power supply, AC adapter. F

 9.3. Size:260K  toshiba
 2sk3117.pdf

2SK3117 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSV) 2SK3117 Chopper Regulator DC-DC Converter, and Motor Drive Applications Unit mm Low drain-source ON resistance RDS (ON) = 0.21 (typ.) High forward transfer admittance Y = 17 S (typ.) fs Low leakage current I = 100 A (max) (V = 500 V) DSS DSS Enhancement-mode Vth = 2.0 4.0 V (

 9.4. Size:149K  sanyo
 2sk3119.pdf

Ordering number ENN6098A N-Channel Silicon MOSFET 2SK3119 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit mm Ultrahigh-speed switching. 2062A 2.5V drive. [2SK3119] 4.5 1.5 1.6 0.4 0.5 3 2 1 0.4 1.5 3.0 1 Gate 2 Drain 0.75 3 Source SANYO PCP (Bottom view) Specifications Absolute Maximum Ratings at Ta = 25 C

 9.5. Size:246K  renesas
 2sk3114b.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 9.6. Size:264K  renesas
 2sk3115b.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 9.7. Size:265K  renesas
 2sk3116b.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 9.8. Size:75K  nec
 2sk3111.pdf

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3111 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ORDERING INFORMATION The 2SK3111 is N channel MOS FET device that PART NUMBER PACKAGE features a low on-state resistance and excellent 2SK3111 TO-220AB switching characteristics, and designed for high voltage 2SK3111-S TO-262 applications such as DC/DC converter, actuator dr

 9.9. Size:70K  nec
 2sk3116.pdf

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3116 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The 2SK3116 is N-channel DMOS FET device that features a PART NUMBER PACKAGE low gate charge and excellent switching characteristics, and 2SK3116 TO-220AB designed for high voltage applications such as switching power 2SK3116-S TO-262 supply, AC adapter. 2SK3116-ZJ TO-

 9.10. Size:94K  nec
 2sk3114.pdf

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3114 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION The 2SK3114 is N-channel DMOS FET device that features a PART NUMBER PACKAGE low gate charge and excellent switching characteristics, and 2SK3114 Isolated TO-220 designed for high voltage applications such as switching power supply, AC adapter. FEATURES

 9.11. Size:67K  nec
 2sk3110.pdf

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3110 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ORDERING INFORMATION The 2SK3110 is N channel MOS FET device that features a low on-state resistance and excellent switching characteristics, PART NUMBER PACKAGE and designed for high voltage applications such as DC/DC 2SK3110 Isolated TO-220 converter, actuator driver. FEAT

 9.12. Size:69K  nec
 2sk3115.pdf

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3115 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK3115 is N-Channel DMOS FET device that features a low gate charge and excellent switching haracteristics, and designed for high voltage applications such as switching power supply, AC adapter. ORDERING INFORMATION FEATURES Low gate charge PART NUMBER PACKAGE QG = 2

 9.13. Size:70K  njs
 sk3114a.pdf

 9.14. Size:53K  hitachi
 2sk310 2sk311.pdf

 9.15. Size:45K  kexin
 2sk3113.pdf

SMD Type IC SMD Type MOSFET MOS Field Effect Transistor 2SK3113 Features TO-252 Unit mm Low on-state resistance +0.15 +0.1 6.50-0.15 2.30-0.1 RDS(on) =4.4 MAX. (VGS =10 V, ID =1.0 A) 5.30+0.2 0.50+0.8 -0.2 -0.7 Low gate charge QG = 9 nC TYP. (VDD =450 V, VGS =10 V, ID =2.0 A) 0.127 Gate voltage rating 30 V 0.80+0.1 max -0.1 Avalanche capability ratings +0.1 2.3 0.60-0.1 1G

 9.16. Size:46K  kexin
 2sk3112.pdf

SMD Type MOSFET MOS Field Effect Transistor 2SK3112 TO-263 Unit mm Features +0.2 4.57-0.2 Gate voltage rating 30 V +0.1 1.27-0.1 Low on-state resistance RDS(on) = 110m MAX. (VGS =10 V, ID = 13A) Low input capacitance +0.1 0.1max 1.27-0.1 Ciss = 1600 pF TYP. (VDS =10V, VGS =0V) +0.1 Avalanche capability rated 0.81-0.1 2.54 Built-in gate protection diode 1Gate +0.2 2.54-0

 9.17. Size:289K  inchange semiconductor
 2sk3111.pdf

isc N-Channel MOSFET Transistor 2SK3111 FEATURES Drain Current I = 20A@ T =25 D C Drain Source Voltage V =200V(Min) DSS Static Drain-Source On-Resistance R =180m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid drive. ABSO

 9.18. Size:357K  inchange semiconductor
 2sk3116-zj.pdf

isc N-Channel MOSFET Transistor 2SK3116-ZJ FEATURES Drain Current I = 7.5A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 1.2 (Max) @VGS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno

 9.19. Size:354K  inchange semiconductor
 2sk3113.pdf

isc N-Channel MOSFET Transistor 2SK3113 FEATURES Drain Current I = 2A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 4.4 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid drive. ABSO

 9.20. Size:287K  inchange semiconductor
 2sk3113-z.pdf

isc N-Channel MOSFET Transistor 2SK3113-Z FEATURES Drain Current I = 2A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 4.4 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid drive. AB

 9.21. Size:288K  inchange semiconductor
 2sk3116.pdf

isc N-Channel MOSFET Transistor 2SK3116 FEATURES Drain Current I = 7.5A@ T =25 D C Drain Source Voltage V =600V(Min) DSS Static Drain-Source On-Resistance R =1.2 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid drive. ABSO

 9.22. Size:279K  inchange semiconductor
 2sk3114.pdf

isc N-Channel MOSFET Transistor 2SK3114 FEATURES Drain Current I = 4A@ T =25 D C Drain Source Voltage V =600V(Min) DSS Static Drain-Source On-Resistance R = 2.2 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid drive. ABSOL

 9.23. Size:288K  inchange semiconductor
 2sk3112.pdf

isc N-Channel MOSFET Transistor 2SK3112 FEATURES Drain Current I = 25A@ T =25 D C Drain Source Voltage V =200V(Min) DSS Static Drain-Source On-Resistance R =110m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid drive. ABSO

 9.24. Size:282K  inchange semiconductor
 2sk3112-s.pdf

isc N-Channel MOSFET Transistor 2SK3112-S FEATURES Drain Current I = 25A@ T =25 D C Drain Source Voltage V = 200V(Min) DSS Static Drain-Source On-Resistance R = 110m (Max) @VGS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi

 9.25. Size:283K  inchange semiconductor
 2sk3111-s.pdf

isc N-Channel MOSFET Transistor 2SK3111-S FEATURES Drain Current I = 20A@ T =25 D C Drain Source Voltage V =200V(Min) DSS Static Drain-Source On-Resistance R = 180m (Max)@ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno

 9.26. Size:357K  inchange semiconductor
 2sk3111-zj.pdf

isc N-Channel MOSFET Transistor 2SK3111-ZJ FEATURES Drain Current I = 20A@ T =25 D C Drain Source Voltage V =200V(Min) DSS Static Drain-Source On-Resistance R = 180m (Max)@ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solen

 9.27. Size:282K  inchange semiconductor
 2sk3116-s.pdf

isc N-Channel MOSFET Transistor 2SK3116-S FEATURES Drain Current I = 7.5A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 1.2 (Max) @VGS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi

 9.28. Size:286K  inchange semiconductor
 2sk3117.pdf

isc N-Channel MOSFET Transistor 2SK3117 FEATURES Drain Current I = 20A@ T =25 D C Drain Source Voltage V = 500V(Min) DSS Static Drain-Source On-Resistance R = 0.27 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid drive. AB

 9.29. Size:356K  inchange semiconductor
 2sk3112-zj.pdf

isc N-Channel MOSFET Transistor 2SK3112-ZJ FEATURES Drain Current I = 25A@ T =25 D C Drain Source Voltage V = 200V(Min) DSS Static Drain-Source On-Resistance R = 110m (Max) @VGS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno

 9.30. Size:279K  inchange semiconductor
 2sk3115.pdf

isc N-Channel MOSFET Transistor 2SK3115 FEATURES Drain Current I = 6A@ T =25 D C Drain Source Voltage V =600V(Min) DSS Static Drain-Source On-Resistance R = 1.2 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid drive. ABSOL