SK3138 Todos los transistores

 ..1. Size:70K  njs
 sk3138.pdf

 9.1. Size:215K  1
 2sk312 2sk313.pdf

 9.2. Size:193K  toshiba
 2sk3130.pdf

2SK3130 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSV) 2SK3130 Switching Regulator Applications Unit mm Reverse-recovery time trr = 85 ns Built-in high-speed flywheel diode Low drain-source ON resistance RDS (ON) = 1.12 (typ.) High forward transfer admittance Yfs = 5.0 S (typ.) Low leakage current IDSS = 100 A (max) (VDS =

 9.3. Size:713K  toshiba
 2sk3131.pdf

2SK3131 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSV) 2SK3131 Chopper Regulator DC-DC Converter and Motor Drive Unit mm Applications Fast reverse recovery time trr = 105 ns (typ.) Built-in high-speed free-wheeling diode Low drain-source ON resistance RDS (ON) = 0.085 (typ.) High forward transfer admittance Yfs = 35 S (typ.) Low l

 9.4. Size:418K  toshiba
 2sk3132.pdf

2SK3132 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSV) 2SK3132 Chopper Regulator DC-DC Converter and Motor Drive Unit mm Applications Low drain-source ON resistance RDS (ON) = 0.07 (typ.) High forward transfer admittance Yfs = 33 S (typ.) Low leakage current IDSS = 100 A (max) (VDS = 500 V) Enhancement mode Vth = 2.4 to 3.4 V (VDS

 9.5. Size:101K  renesas
 rej03g1068 2sk3136ds.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 9.6. Size:87K  renesas
 2sk3136.pdf

2SK3136 Silicon N Channel MOS FET High Speed Power Switching REJ03G1068-0400 (Previous ADE-208-696B) Rev.4.00 Sep 20, 2005 Features Low on-resistance RDS(on) =4.5 m typ. Low drive current 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code PRSS0004AC-A (Package name TO-220AB) D 1. Gate 2. Drain (Flange) G 3. Source

 9.7. Size:108K  renesas
 rej03g1066 2sk3134lsds.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 9.8. Size:94K  renesas
 2sk3135.pdf

2SK3135(L), 2SK3135(S) Silicon N Channel MOS FET High Speed Power Switching REJ03G1067-0400 (Previous ADE-208-695B) Rev.4.00 Sep 07, 2005 Features Low on-resistance RDS(on) = 6 m typ. Low drive current 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code PRSS0004AE-A RENESAS Package code PRSS0004AE-B (Package name LDPAK(L

 9.9. Size:94K  renesas
 2sk3134.pdf

2SK3134(L), 2SK3134(S) Silicon N Channel MOS FET High Speed Power Switching REJ03G1066-0400 (Previous ADE-208-721B) Rev.4.00 Sep 07, 2005 Features Low on-resistance RDS(on) = 4 m typ. Low drive current 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code PRSS0004AE-A RENESAS Package code PRSS0004AE-B (Package name LDPAK(L

 9.10. Size:108K  renesas
 rej03g1067 2sk3135lsds.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 9.11. Size:70K  njs
 sk3132.pdf

 9.12. Size:25K  hitachi
 2sk3133.pdf

2SK3133(L),2SK3133(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-720 (Z) Target Specification 1st. Edition February 1999 Features Low on-resistance RDS(on) = 7 m typ. Low drive current 4 V gate drive device can be driven from 5 V source Outline LDPAK 4 4 D 1 2 3 1 G 2 3 1. Gate 2. Drain 3. Source 4. Drain S 2SK3133(L),2SK3133(S) Ab

 9.13. Size:279K  inchange semiconductor
 2sk3130.pdf

isc N-Channel MOSFET Transistor 2SK3130 FEATURES Drain Current I = 6A@ T =25 D C Drain Source Voltage V =600V(Min) DSS Static Drain-Source On-Resistance R = 1.55 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid drive. ABSO

 9.14. Size:299K  inchange semiconductor
 2sk313.pdf

isc N-Channel MOSFET Transistor 2SK313 FEATURES Drain Current I = 12A@ T =25 D C Drain Source Voltage V = 450V(Min) DSS Static Drain-Source On-Resistance R = 0.9 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid

 9.15. Size:288K  inchange semiconductor
 2sk3136.pdf

isc N-Channel MOSFET Transistor 2SK3136 FEATURES Drain Current I = 75A@ T =25 D C Drain Source Voltage V =40V(Min) DSS Static Drain-Source On-Resistance R =5.8 m (Max)@ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid

 9.16. Size:282K  inchange semiconductor
 2sk3134l.pdf

isc N-Channel MOSFET Transistor 2SK3134L FEATURES Drain Current I = 75A@ T =25 D C Drain Source Voltage V = 30V(Min) DSS Static Drain-Source On-Resistance R = 10m (Max)@VGS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid dr

 9.17. Size:282K  inchange semiconductor
 2sk3133l.pdf

isc N-Channel MOSFET Transistor 2SK3133L FEATURES Drain Current I = 50A@ T =25 D C Drain Source Voltage V = 30V(Min) DSS Static Drain-Source On-Resistance R = 10m (Max)@ VGS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid d

 9.18. Size:356K  inchange semiconductor
 2sk3133s.pdf

isc N-Channel MOSFET Transistor 2SK3133S FEATURES Drain Current I = 50A@ T =25 D C Drain Source Voltage V = 30V(Min) DSS Static Drain-Source On-Resistance R = 10m (Max) @VDS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid d

 9.19. Size:283K  inchange semiconductor
 2sk3131.pdf

isc N-Channel MOSFET Transistor 2SK3131 FEATURES Drain Current I = 50A@ T =25 D C Drain Source Voltage V = 500V(Min) DSS Static Drain-Source On-Resistance R = 0.11 (Max) @VGS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid

 9.20. Size:329K  inchange semiconductor
 2sk3135s.pdf

isc N-Channel MOSFET Transistor 2SK3135S FEATURES Drain Current I = 75A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 7.5m (Max)@VGS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid d

 9.21. Size:284K  inchange semiconductor
 2sk3132.pdf

isc N-Channel MOSFET Transistor 2SK3132 FEATURES Drain Current I = 50A@ T =25 D C Drain Source Voltage V = 500V(Min) DSS Static Drain-Source On-Resistance R = 95m (Max) @VGS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid d

 9.22. Size:356K  inchange semiconductor
 2sk3134s.pdf

isc N-Channel MOSFET Transistor 2SK3134S FEATURES Drain Current I = 75A@ T =25 D C Drain Source Voltage V = 30V(Min) DSS Static Drain-Source On-Resistance R = 10m (Max)@VGS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid dr

 9.23. Size:282K  inchange semiconductor
 2sk3135l.pdf

isc N-Channel MOSFET Transistor 2SK3135L FEATURES Drain Current I = 75A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 7.5m (Max)@VGS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid d