SK3854 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SK3854
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 1.2 W
Tensión colector-base (Vcb): 75 V
Tensión colector-emisor (Vce): 40 V
Tensión emisor-base (Veb): 6 V
Corriente del colector DC máxima (Ic): 0.8 A
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 300 MHz
Ganancia de corriente contínua (hfe): 200
Paquete / Cubierta: TO92
- Selección de transistores por parámetros
SK3854 Datasheet (PDF)
2sk3857tk.pdf

2SK3857TK TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK3857TK For ECM Unit: mm Application for Ultra-compact ECM 1.20.050.80.05Absolute Maximum Ratings (Ta=25C) 13Characteristic Symbol Rating Unit2Gate-Drain voltage VGDO -20 VGate Current IG 10 mADrain power dissipation (Ta = 25C) PD 100 mWJunction Temperature Tj 125 C Storag
2sk3857tv.pdf

2SK3857TV TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK3857TV For ECM Unit: mm Application for Ultra-compact ECM 1.20.050.80.05Absolute Maximum Ratings (Ta=25C) 123Characteristic Symbol Rating UnitGate-Drain voltage VGDO -20 VGate Current IG 10 mADrain power dissipation (Ta = 25C) PD 100 mWJunction Temperature Tj 125 C Stora
2sk3850.pdf

Ordering number : ENN8193 2SK3850N-Channel Silicon MOSFETGeneral-Purpose Switching Device2SK3850ApplicationsFeatures Best suited for motor drive. Low ON-resistance. Low Qg.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 600 VGate-to-Source Voltage VGSS 30 VDrain Current (DC) ID 0.7 AD
Otros transistores... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
History: DBC847BPDW1T1G | ZTX3709L | 2SC1622D17 | D45H11G | 2SC414 | RCA126 | ZTX223L
History: DBC847BPDW1T1G | ZTX3709L | 2SC1622D17 | D45H11G | 2SC414 | RCA126 | ZTX223L



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