SK3867A Todos los transistores

 ..1. Size:70K  njs
 sk3867a.pdf

 9.1. Size:250K  toshiba
 2sk3869.pdf

2SK3869 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type ( -MOSVI) 2SK3869 Switching Regulator Applications Unit mm Low drain-source ON resistance RDS (ON) = 0.55 (typ.) High forward transfer admittance Yfs = 5.5 S (typ.) Low leakage current IDSS = 100 A (VDS = 450 V) Enhancement model Vth = 2.0 4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maxi

 9.2. Size:297K  toshiba
 2sk3863.pdf

2SK3863 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type ( -MOSVI) 2SK3863 Switching Regulator Applications Unit mm Low drain-source ON resistance RDS (ON) = 1.35 (typ.) High forward transfer admittance Yfs = 2.8S (typ.) Low leakage current IDSS = 100 A (VDS = 500 V) Enhancement model Vth = 2.0 4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximu

 9.3. Size:234K  toshiba
 2sk3868.pdf

2SK3868 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type ( -MOSVI) 2SK3868 Switching Regulator Applications Unit mm Low drain-source ON resistance RDS (ON) = 1.3 (typ.) High forward transfer admittance Yfs = 3S (typ.) Low leakage current IDSS = 100 A (VDS = 500 V) Enhancement model Vth = 2.0 4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum R

 9.4. Size:196K  toshiba
 2sk3864.pdf

2SK3864 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) 2SK3864 PDP Sustain Circuit Applications Unit mm Switching Regulator Applications Low drain-source ON resistance RDS (ON) = 20 m (typ.) High forward transfer admittance Yfs = 75 S (typ.) Low leakage current IDSS = 100 A (max) (VDSS = 120 V) Enhancement mode Vth = 2.0 4.0 V

 9.5. Size:70K  njs
 sk3866a.pdf

 9.6. Size:41K  no
 2sk386.pdf

 9.7. Size:284K  inchange semiconductor
 2sk386.pdf

isc N-Channel MOSFET Transistor 2SK386 FEATURES Drain Current I = 10A@ T =25 D C Drain Source Voltage V = 450V(Min) DSS Static Drain-Source On-Resistance R = 0.7 (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid d

 9.8. Size:280K  inchange semiconductor
 2sk3869.pdf

isc N-Channel MOSFET Transistor 2SK3869 FEATURES Drain Current I = 10A@ T =25 D C Drain Source Voltage V = 450V(Min) DSS Static Drain-Source On-Resistance R = 0.68 (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid

 9.9. Size:286K  inchange semiconductor
 2sk3863.pdf

isc N-Channel MOSFET Transistor 2SK3863 FEATURES Drain Current I = 5.0A@ T =25 D C Drain Source Voltage V = 500V(Min) DSS Static Drain-Source On-Resistance R = 1.5 (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid

 9.10. Size:279K  inchange semiconductor
 2sk3868.pdf

isc N-Channel MOSFET Transistor 2SK3868 FEATURES Drain Current I = 5.0A@ T =25 D C Drain Source Voltage V = 500V(Min) DSS Static Drain-Source On-Resistance R = 1.7 (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid