HP122U Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: HP122U  📄📄 

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 20 W

Tensión colector-base (Vcb): 100 V

Tensión colector-emisor (Vce): 100 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 5 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Capacitancia de salida (Cc): 200 pF

Ganancia de corriente contínua (hFE): 1000

Encapsulados: TO251

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HP122U datasheet

 ..1. Size:72K  shantou-huashan
 hp122u.pdf pdf_icon

HP122U

NPN S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HP122U APPLICATIONS NPN Epitaxial Darlington Transistor. High DC Current Gain. Monolithic Construction with Built-In Base-Emitter Shunt Resistors. ABSOLUTE MAXIMUM RATINGS Ta=25 TO-251 Tstg Storage Temperature -55 150 Tj Junction Tempera

 9.1. Size:129K  shantou-huashan
 hp122.pdf pdf_icon

HP122U

NPN S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HP122 APPLICATIONS NPN Epitaxial Darlington Transistor. High DC Current Gain. Monolithic Construction with Built-In Base-Emitter Shunt Resistors. ABSOLUTE MAXIMUM RATINGS Ta=25 TO-220 Tstg Storage Temperature -55 150 Tj Junction Temperatur

 9.2. Size:71K  shantou-huashan
 hp122w.pdf pdf_icon

HP122U

NPN S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HP122W APPLICATIONS NPN Epitaxial Darlington Transistor. High DC Current Gain. Monolithic Construction with Built-In Base-Emitter Shunt Resistors. ABSOLUTE MAXIMUM RATINGS Ta=25 TO-263 Tstg Storage Temperature -55 150 Tj Junction Tempera

Otros transistores... HC5039, HD313, HD880, HE2955, HE3055, HP102, HP107, HP122, 2SC1815, HP122W, HP127, HP127W, HP142T, HP142TS, HP142TSW, HP142TW, HP147T