H1015 Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: H1015
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.4 W
Tensión colector-base (Vcb): 50 V
Tensión colector-emisor (Vce): 50 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 0.15 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 80 MHz
Ganancia de corriente contínua (hFE): 70
Encapsulados: TO92
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H1015 datasheet
buh1015.pdf
BUH1015 BUH1015HI HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR SGS-THOMSON PREFERRED SALESTYPES HIGH VOLTAGE CAPABILITY VERY HIGH SWITCHING SPEED APPLICATIONS HORIZONTAL DEFLECTION FOR COLOUR TV AND MONITORS DESCRIPTION 3 3 2 2 The BUH1015and BUH1015HI are manufactured 1 1 using Multiepitaxial Mesa technology for cost-effective high performance and uses a TO-218 ISOWAT
buh1015.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors BUH1015 DESCRIPTION With TO-3PN package. High voltage. High switching speed. APPLICATIONS Horizontal deflection for colour TV and monitors. PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 Emitter Absolute maximum
buh1015hi.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors BUH1015HI DESCRIPTION With TO-3PML package. High voltage. High switching speed. APPLICATIONS Horizontal deflection for colour TV and monitors. PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PML) and symbol 3 Emitter Absolute maxi
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