2N72. Equivalente. Reemplazo. Todos los transistores. Hoja de especificaciones. Principales características

2N72 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2N72

Material: Ge

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.05 W

Tensión colector-base (Vcb): 45 V

Tensión colector-emisor (Vce): 40 V

Corriente del colector DC máxima (Ic): 0.008 A

Temperatura operativa máxima (Tj): 65 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 3 MHz

Ganancia de corriente contínua (hFE): 25

Encapsulados: TO1

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2N72 datasheet

0.1. Size:520K rca
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PD - 90497F IRFM9240 JANTX2N7237 JANTXV2N7237 JANS2N7237 POWER MOSFET REF MIL-PRF-19500/595 THRU-HOLE (TO-254AA) 200V, P-CHANNEL Product Summary HEXFET MOSFET TECHNOLOGY Part Number RDS(on) ID IRFM9240 0.51 -11A HEXFET MOSFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on

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TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax (978) 689-0803 Website http //www.microsemi.com P-CHANNEL MOSFET Qualified per MIL-PRF-19500/595 DEVICES LEVELS 2N7236 2N7236U JAN JANTX JANTXV ABSOLUTE MAXIMUM RATINGS (TC = +25 C unless otherwise noted) Parameters / Test Conditions Symbol Value Unit Drain Source Voltage VD

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0.8. Size:271K international rectifier
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PD-91551D IRFN350 JANTX2N7227U JANTXV2N7227U POWER MOSFET REF MIL-PRF-19500/592 SURFACE MOUNT(SMD-1) 400V, N-CHANNEL Product Summary HEXFET MOSFET TECHNOLOGY Part Number RDS(on) ID IRFN350 0.315 14A HEXFET MOSFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on- state resi

0.9. Size:220K international rectifier
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PD-91550D IRFN340 JANTX2N7221U JANTXV2N7221U POWER MOSFET REF MIL-PRF-19500/596 SURFACE MOUNT(SMD-1) 400V, N-CHANNEL Product Summary HEXFET MOSFET TECHNOLOGY Part Number RDS(on) ID IRFN340 0.55 10A HEXFET MOSFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state re- si

0.10. Size:165K international rectifier
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PD - 91547C IRFN150 JANTX2N7224U JANTXV2N7224U POWER MOSFET REF MIL-PRF-19500/592 SURFACE MOUNT(SMD-1) 100V, N-CHANNEL Product Summary HEXFET MOSFET TECHNOLOGY Part Number RDS(on) ID IRFN150 0.07 34A HEXFET MOSFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state re-

0.11. Size:180K international rectifier
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PD - 90418C IRFN450 JANTX2N7228U JANTXV2N7228U POWER MOSFET REF MIL-PRF-19500/592 SURFACE MOUNT(SMD-1) 500V, N-CHANNEL Product Summary HEXFET MOSFET TECHNOLOGY Part Number RDS(on) ID IRFN450 0.415 12A HEXFET MOSFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state re-

0.12. Size:165K international rectifier
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PD - 91548C IRFN240 JANTX2N7219U JANTXV2N7219U POWER MOSFET REF MIL-PRF-19500/596 SURFACE MOUNT(SMD-1) 200V, N-CHANNEL Product Summary HEXFET MOSFET TECHNOLOGY Part Number RDS(on) ID IRFN240 0.18 18A HEXFET MOSFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state re-

0.13. Size:179K international rectifier
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PD - 91552C IRFN440 JANTX2N7222U JANTXV2N7222U POWER MOSFET REF MIL-PRF-19500/596 SURFACE MOUNT(SMD-1) 500V, N-CHANNEL Product Summary HEXFET MOSFET TECHNOLOGY Part Number RDS(on) ID IRFN440 0.85 8.0A HEXFET MOSFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state re-

0.14. Size:226K international rectifier
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2N720A EPITAXIAL PLANAR NPN HIGH VOLTAGE GENERAL PURPOSE DESCRIPTION The 2N790A is a silicon Planar Epitaxial NPN transistor in Jedec TO-18 metal case. It is suitable for a wide variety of amplifier and switching applications. TO-18 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VCBO Collector-Base Voltage (IE = 0) 120 V V Collector-Emitter Vo

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2N7218, JANTX2N7218, JANTXV2N7218 2N7221, JANTX2N7221, JANTXV2N7221 2N7219, JANTX2N7219, JANTXV2N7219 2N7222, JANTX2N7222, JANTXV2N7222 JANTX, JANTXV POWER MOSFET IN TO-254AA PACKAGE, QUALIFIED TO MIL-PRF-19500/596 100V Thru 500V, Up to 28A, N-Channel, MOSFET Power Transistor, Repetitive Avalanche Rated FEATURES Repetitive Avalanche Rating Isolated and Hermetically Sealed L

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2N7224, JANTX2N7224, JANTXV2N7224 2N7227, JANTX2N7227, JANTXV2N7227 2N7225, JANTX2N7225, JANTXV2N7225 2N7228, JANTX2N7228, JANTXV2N7228 JANTX, JANTXV POWER MOSFET IN TO-254AA PACKAGE, QUALIFIED TO MIL-PRF-19500/592 100V Thru 500V, Up to 34A, N-Channel, MOSFET Power Transistor, Repetitive Avalanche Rated FEATURES Repetitive Avalanche Rating Isolated and Hermetically Sealed L

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D TO-254 G 2N7227 400 Volt 0.315 S JX2N7227* JV2N7227* TM POWER MOS IV *QUALIFIED TO MIL-S-19500/592 31/7/92 JEDEC REGISTERED N - CHANNEL HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings TC = 25 C unless otherwise specified. Symbol Parameter 2N7227 UNIT VDSS Drain-Source Voltage 400 Volts VGS Gate-Source Voltage 20 Continuous Drain Current @ TC = 25 C 14 ID Co

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D TO-254 G 2N7228 500 Volt 0.415 S JX2N7228* JV2N7228* TM POWER MOS IV *QUALIFIED TO MIL-S-19500/592 31/7/92 JEDEC REGISTERED N - CHANNEL HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings TC = 25 C unless otherwise specified. Symbol Parameter 2N7228 UNIT VDSS Drain-Source Voltage 500 Volts VGS Gate-Source Voltage 20 Continuous Drain Current @ TC = 25 C 12 ID Co

0.21. Size:46K harris semi
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2N7288D, 2N7288R S E M I C O N D U C T O R 2N7288H REGISTRATION PENDING Radiation Hardened Available as FRS244 (D, R, H) N-Channel Power MOSFETs November 1994 Features Package 9A, 250V, RDS(on) = 0.415 TO-257AA Second Generation Rad Hard MOSFET Results From New Design Concepts Gamma - Meets Pre-Rad Specifications to 100KRAD(Si) - Defined End Point Specs at 300KRAD(Si

0.22. Size:45K intersil
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JANSR2N7275 Formerly FRL230R4 5A, 200V, 0.500 Ohm, Rad Hard, June 1998 N-Channel Power MOSFET Features Description 5A, 200V, rDS(ON) = 0.500 The Intersil Corporation has designed a series of SECOND GENERATION hardened power MOSFETs of both N-Chan- Total Dose nel and P-Channel enhancement types with ratings from 100V to 500V, 1A to 60A, and on resistance as low as - Meets Pre

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JANSR2N7292 Formerly FRF150R4 25A, 100V, 0.070 Ohm, Rad Hard, June 1998 N-Channel Power MOSFET Features Description 25A, 100V, rDS(ON) = 0.070 The Intersil Corporation has designed a series of SECOND GENERATION hardened power MOSFETs of both N-Chan- Total Dose nel and P-Channel enhancement types with ratings from 100V to 500V, 1A to 60A, and on resistance as low as - Meets P

0.24. Size:45K intersil
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JANSR2N7272 Formerly FRL130R4 8A, 100V, 0.180 Ohm, Rad Hard, June 1998 N-Channel Power MOSFET Features Description 8A, 100V, rDS(ON) = 0.180 The Intersil Corporation,has designed a series of SECOND GENERATION hardened power MOSFETs of both N-Chan- Total Dose nel and P-Channel enhancement types with ratings from 100V to 500V, 1A to 60A, and on resistance as low as - Meets Pre

0.25. Size:69K intersil
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JANSR2N7294 Formerly FRF250R4 23A, 200V, 0.115 Ohm, Rad Hard, June 1998 N-Channel Power MOSFET Features Description 23A, 200V, rDS(ON) = 0.115 The Intersil Corporation has designed a series of SECOND GENERATION hardened power MOSFETs of both N-Chan- Total Dose nel and P-Channel enhancement types with ratings from 100V to 500V, 1A to 60A, and on resistance as low as - Meets P

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JANSR2N7278 Formerly FRL234R4 4A, 250V, 0.700 Ohm, Rad Hard, June 1998 N-Channel Power MOSFET Features Description 4A, 250V, rDS(ON) = 0.700 The Intersil Corporation has designed a series of SECOND GENERATION hardened power MOSFETs of both N-Chan- Total Dose nel and P-Channel enhancement types with ratings from 100V to 500V, 1A to 60A, and on resistance as low as - Meets Pre

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INCH POUND The documentation and process conversion measures necessary to comply with this revision shall MIL-PRF-19500/606B be completed by 28 October 2004. 28 July 2004 SUPERSEDING MIL-PRF-19500/606A 6 February 1998 * PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE ONLY) TRANSISTORS, N-CHANNEL, SILICON, TYPES 2N7291, 2N729

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INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall MIL-PRF-19500/604B be completed by 30 November 2004. 30 July 2004 SUPERSEDING MIL-PRF-19500/604A 21 June 1999 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE CHARACTERIZATION ONLY) TRANSISTORS, N-CHANNEL, SILICON, TYPES

0.29. Size:21K semelab
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IRFN140 SEME 2N7218U LAB MECHANICAL DATA Dimensions in mm (inches) N CHANNEL POWER MOSFET VDSS 100V ID(cont) 28A RDS(on) 0.077 FEATURES HERMETICALLY SEALED SURFACE MOUNT PACKAGE SMALL FOOTPRINT EFFICIENT USE OF PCB SPACE. SIMPLE DRIVE RE

0.30. Size:21K semelab
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IRFN9140 2N7236U MECHANICAL DATA Dimensions in mm (inches) P CHANNEL POWER MOSFET VDSS 100V ID(cont) 18A RDS(on) 0.20 FEATURES HERMETICALLY SEALED SURFACE MOUNT PACKAGE SMALL FOOTPRINT EFFICIENT USE OF PCB SPACE SIMPLE DRIVE REQUIREM

0.31. Size:10K semelab
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2N720A Dimensions in mm (inches). Bipolar NPN Device in a 5.84 (0.230) 5.31 (0.209) Hermetically sealed TO18 4.95 (0.195) 4.52 (0.178) Metal Package. Bipolar NPN Device. VCEO = 100V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.2A 2.54 (0.100) All Semelab hermetically sealed products Nom. can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JA

0.32. Size:23K semelab
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2N7224 SEME IRFM150 LAB MECHANICAL DATA Dimensions in mm (inches) N CHANNEL 13.59 (0.535) 6.32 (0.249) POWER MOSFET 13.84 (0.545) 6.60 (0.260) 3.53 (0.139) 1.02 (0.040) Dia. 3.78 (0.149) 1.27 (0.050) VDSS 100V ID(cont) 34A RDS(on) 0.070 1 2 3 FEATURES REPETITIVE AVALANCHE RATING ISOLATED AND HERMETICALLY SEALED ALTERNATIVE TO TO-3 PACKAGE 0.89 (0.035) 1.14 (0

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Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR SWITCHING TRANSISTOR 2N720A TO-18 Metal Can Package ABSOLUTE MAXIMUM RATINGS (Ta=25 C unless specified otherwise) DESCRIPTION SYMBOL VALUE UNIT VCEO Collector Emitter Voltage 80 V VCER Collector - Emitter Voltage 100 V VCBO Collector Base Voltage 120 V VEBO Emitter Base V

0.34. Size:176K microsemi
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TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax (978) 689-0803 Website http //www.microsemi.com RADIATION HARDENED N-CHANNEL MOSFET Reference MIL-PRF-19500/603 DEVICES LEVELS 2N7268 2N7268U JANSR (100K RAD(Si)) JANSF (300K RAD(Si)) ABSOLUTE MAXIMUM RATINGS (TC = +25 C unless otherwise noted) Parameters / Test Conditions Symbol

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TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland 1-800-446-1158 / (978) 620-2600 / Fax (978) 689-0803 Tel +353 (0) 65 6840044 Fax +353 (0) 65 6822298 Website http //www.microsemi.com N-CHANNEL MOSFET Qualified per MIL-PRF-19500/592 DEVICES LEVELS 2N7225 2N7225U JAN JANTX JANTXV ABSOLUTE MAXIMUM RATINGS (TC = +25 C u

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TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax (978) 689-0803 Website http //www.microsemi.com RADIATION HARDENED N-CHANNEL MOSFET Reference MIL-PRF-19500/601 DEVICES LEVELS 2N7262 2N7262U JANSR (100K RAD(Si)) JANSF (300K RAD(Si)) ABSOLUTE MAXIMUM RATINGS (TC = +25 C unless otherwise noted) Parameters / Test Conditions Symbol

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TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax (978) 689-0803 Website http //www.microsemi.com RADIATION HARDENED N-CHANNEL MOSFET Reference MIL-PRF-19500/603 DEVICES LEVELS 2N7269 2N7269U JANSR (100K RAD(Si)) JANSF (300K RAD(Si)) ABSOLUTE MAXIMUM RATINGS (TC = +25 C unless otherwise noted) Parameters / Test Conditions Symbol

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TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax (978) 689-0803 Website http //www.microsemi.com RADIATION HARDENED N-CHANNEL MOSFET Reference MIL-PRF-19500/601 DEVICES LEVELS 2N7261 2N7261U JANSR (100K RAD(Si)) JANSF (300K RAD(Si)) ABSOLUTE MAXIMUM RATINGS (TC = +25 C unless otherwise noted) Parameters / Test Conditions Symbol

Otros transistores... 2N715 , 2N716 , 2N717 , 2N717A , 2N718 , 2N718A , 2N719 , 2N719A , BD136 , 2N720 , 2N720A , 2N721 , 2N721A , 2N722 , 2N722A , 2N725 , 2N726 .