H370 Todos los transistores

 ..1. Size:97K  shantou-huashan
 h370.pdf

 0.1. Size:306K  1
 irfh3707trpbf.pdf

PD - 96227B IRFH3707PbF Applications HEXFET Power MOSFET l Synchronous Buck Converter for Computer VDSS RDS(on) max Processor Power Qg l Isolated DC to DC Converters for Network and 12.4m @VGS = 10V 30V 5.4nC Telecom l Buck Converters for Set-Top Boxes l System/load switch Benefits S l Low RDS(ON) S l Very Low Gate Charge D l Low Junction to PCB Thermal Resistance S D l F

 0.2. Size:200K  international rectifier
 irfh3707pbf.pdf

PD - 96227A IRFH3707PbF Applications HEXFET Power MOSFET l Synchronous Buck Converter for Computer VDSS RDS(on) max Processor Power Qg l Isolated DC to DC Converters for Network and 12.4m @VGS = 10V 30V 5.4nC Telecom l Buck Converters for Set-Top Boxes l System/load switch Benefits S l Low RDS(ON) S D l Very Low Gate Charge S D l Low Junction to PCB Thermal Resistance G

 0.3. Size:229K  international rectifier
 irfh3707pbf-1.pdf

IRFH3707PbF-1 HEXFET Power MOSFET VDS 30 V S RDS(on) max S 12.4 m D (@V = 10V) GS S D Qg (typical) 5.4 nC G D ID 12 A D (@T = 25 C) A 3mm x 3mm PQFN Applications l Synchronous Buck Converter for Computer Processor Power l Isolated DC to DC Converters for Network and Telecom l Buck Converters for Set-Top Boxes l System/load switch Features Benefits Industry-stand

 0.4. Size:275K  international rectifier
 irfh3702pbf.pdf

PD - 97368A IRFH3702PbF Applications HEXFET Power MOSFET l Synchronous Buck Converter for Computer VDSS RDS(on) max Qg Processor Power l Isolated DC to DC Converters for Network and 7.1m 30V @VGS = 10V 9.6nC Telecom l Buck Converters for Set-Top Boxes Benefits l Low RDS(ON) S S l Very Low Gate Charge D l Low Junction to PCB Thermal Resistance S D l Fully Characterized A

 0.5. Size:844K  cn vbsemi
 irfh3702tr.pdf

IRFH3702TR www.VBsemi.tw N-Channel 30 V (D-S) MOSFET FEATURES Halogen-free According to IEC 61249-2-21 PRODUCT SUMMARY Definition VDS (V) RDS(on) ( ) Typ. Qg (Typ.) ID (A) TrenchFET Power MOSFET 0.004 at VGS = 4.5 V 50 100 % Rg and UIS Tested 30 33.5 nC 0.005 at VGS = 2.5 V 45 Compliant to RoHS Directive 2002/95/EC APPLICATIONS Motor Control Indust

 0.6. Size:304K  inchange semiconductor
 iscnh370w.pdf

isc N-Channel MOSFET Transistor ISCNH370W FEATURES Drain Current I = 40A@ T =25 D C Drain Source Voltage V = 650V(Min) DSS Static Drain-Source On-Resistance R = 95m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid drive. A