H8050S . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: H8050S
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.625 W
Tensión colector-base (Vcb): 40 V
Tensión colector-emisor (Vce): 20 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 0.5 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 100 MHz
Ganancia de corriente contínua (hfe): 85
Paquete / Cubierta: TO92
Búsqueda de reemplazo de transistor bipolar H8050S
H8050S Datasheet (PDF)
h8050s.pdf
NPN S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. H8050S APPLICATIONS Audio Frequency Amplifier. ABSOLUTE MAXIMUM RATINGSTa=25 TstgStorage Temperature -55~150 TO-92 TjJuncttion Temperature150PCCollector Dissipation
lh8050qlt1g.pdf
LESHAN RADIO COMPANY, LTD.General Purpose TransistorsLH8050PLT1GSeriesNPN SiliconS-LH8050PLT1GFEATURE Series High current capacity in compact package.IC =1.5A.3 Epitaxial planar type. NPN complement: LH8050 Pb-Free Package is available.1 S- Prefix for Automotive and Other Applications Requiring Unique Site and 2Control Change Requirements; AEC-Q101 Qualified and
lh8050plt1g lh8050plt3g lh8050qlt1g lh8050qlt3g.pdf
LESHAN RADIO COMPANY, LTD.General Purpose TransistorsLH8050PLT1GSeriesNPN SiliconS-LH8050PLT1GFEATURE Series High current capacity in compact package.IC =1.5A.3 Epitaxial planar type. NPN complement: LH8050 Pb-Free Package is available.1 S- Prefix for Automotive and Other Applications Requiring Unique Site and 2Control Change Requirements; AEC-Q101 Qualified and
lh8050plt1g lh8050qlt1g.pdf
LESHAN RADIO COMPANY, LTD.General Purpose TransistorsLH8050PLT1GSeriesNPN SiliconS-LH8050PLT1GFEATURE Series High current capacity in compact package.IC =1.5A.3 Epitaxial planar type. NPN complement: LH8050 Pb-Free Package is available.1 S- Prefix for Automotive and Other Applications Requiring Unique Site and 2Control Change Requirements; AEC-Q101 Qualified and
lh8050plt1g.pdf
LESHAN RADIO COMPANY, LTD.General Purpose TransistorsLH8050PLT1GSeriesNPN SiliconS-LH8050PLT1GFEATURE High current capacity in compact package.SeriesIC =1.5A. Epitaxial planar type. NPN complement: LH80503 Pb-Free Package is available. S- Prefix for Automotive and Other Applications Requiring Unique Site and 1Control Change Requirements; AEC-Q101 Qualified and PP
h8050.pdf
Shantou Huashan Electronic Devices Co.,Ltd. H8050 NPN EPITAXIAL SILICON TRANSISTOR 2W OUTPUT AMPLIFIER OF PORTABLE RADIOS IN CLASS B PUSH-PULL OPERATION. ABSOLUTE MAXIMUM RATINGSTa=25 TstgStorage Temperature -55~150 TO-92 TjJuncttion Temperature150PCCollector Dissipatio
h8050.pdf
SMD Type TransistorsNPN TransistorsH8050 Features1.70 0.1 Collector Power Dissipation: PC=1W Collector Current: IC=1.5A Comlementary to H85500.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-base voltage VCBO 40 VCollector-emitter voltage VCEO 25 VEmitter-base voltage VEBO 5 VC
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
