SBP13003O Todos los transistores

 

SBP13003O . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SBP13003O
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 40 W
   Tensión colector-base (Vcb): 700 V
   Tensión colector-emisor (Vce): 400 V
   Tensión emisor-base (Veb): 9 V
   Corriente del colector DC máxima (Ic): 1.5 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Ganancia de corriente contínua (hfe): 5
   Paquete / Cubierta: TO220
     - Selección de transistores por parámetros

 

SBP13003O Datasheet (PDF)

 ..1. Size:364K  winsemi
sbp13003o.pdf pdf_icon

SBP13003O

SBP13003-OSBP13003-OSBP13003-OSBP13003-OHigh Voltage Fast-Switching NPN Power TransistorHigh Voltage Fast-Switching NPN Power TransistorHigh Voltage Fast-Switching NPN Power TransistorHigh Voltage Fast-Switching NPN Power TransistorFeaturesFeaturesFeaturesFeatures Very High Switching Speed High Voltage Capability Wide Reverse Bias SOAGeneral DescriptionG

 6.1. Size:445K  winsemi
sbp13003h.pdf pdf_icon

SBP13003O

SBP13003HSBP13003HSBP13003HSBP13003HHigh Voltage Fast -Switching NPN Power TransistorFeaturesVery High Switching Speed High Voltage Capability Wide Reverse Bias SOAGeneral DescriptionThis Device is designed for high voltage , High speedSwitching characteristics required such as lightingsystem, switching mode power supply.Absolute Maximum RatingsSymbol Parameter

 6.2. Size:560K  winsemi
sbp13003d.pdf pdf_icon

SBP13003O

SBP13003DSBP13003DSBP13003DSBP13003DHigh Voltage Fast -Switching NPN Power TransistorFeaturessymbolsymbolsymbolsymbol Very High Switching Speed2.Collector High Voltage Capability Wide Reverse Bias SOA1.Base Built-in free wheeling diode3.EmitterGeneral DescriptionThis Device is designed for high Voltage ,High speedswitching Characteristics requir

 6.3. Size:160K  semiwell
sbp13003.pdf pdf_icon

SBP13003O

SBP13003SemiWell SemiconductorHigh Voltage Fast-Switching NPN Power TransistorFeaturesSymbol2.Collector- Very High Switching Speed - Minimum Lot-to-Lot hFE Variation1.Base - Short storge time- Wide Reverse Bias S.O.A3.EmitterGeneral DescriptionTO-220This devices is designed for high voltage, high speed switchingcharacteristic,especially suitable for ba

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History: CV7343A | ZTX614 | ECH8503-TL-H | 2SC889 | MPS2484 | BD120 | BF321

 

 
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