SD1018 Todos los transistores

HG RF POWER TRANSISTOR SD1018 Semiconductors HG ROHS Compliance,Silicon NPN POWER TRANSISTOR D E S C R I P T I O N K E Y F E A T U R E S D E S C R I P T I O N K E Y F E A T U R E S D E S C R I P T I O N K E Y F E A T U R E S D E S C R I P T I O N K E Y F E A T U R E S The SD1018 is an epitaxial silicon NPN planar transistor designed 175 MHz primarily for VHF mobile and marine tra

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBT1010LT1/D MMBT1010LT1 Low Saturation Voltage MSD1010T1 Motorola Preferred Devices PNP Silicon Driver Transistors Part of the GreenLine Portfolio of devices with energy conserving traits. This PNP Silicon Epitaxial Planar Transistor is designed to conserve energy PNP GENERAL in general purpose driver applicatio

Ordering number ENN676D PNP/NPN Epitaxial Planar Silicon Transistors 2SB808/2SD1012 Low-Voltage Large-Current Amplifier Applications Package Dimensions unit mm 2033A [2SB808/2SD1012] 2.2 4.0 0.4 0.5 0.4 0.4 1 2 3 1.3 1.3 1 Emitter 2 Collector ( ) 2SB808 3 Base 3.0 3.8 SANYO SPA Specifications Absolute Maximum Ratings at Ta = 25 C Parameter Symbol Conditions R

Transistor 2SD1011 Silicon NPN epitaxial planer type For low-frequency amplification Unit mm 5.0 0.2 4.0 0.2 Features High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). High emitter to base voltage VEBO. Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit +0.2 +0.2 0.45 0.1 0.45 0.1 Collector to base voltage VCBO 1

Transistor 2SD1011 Silicon NPN epitaxial planer type For low-frequency amplification Unit mm 5.0 0.2 4.0 0.2 Features High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). High emitter to base voltage VEBO. Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit +0.2 +0.2 0.45 0.1 0.45 0.1 Collector to base voltage VCBO 1

Transistor 2SD1010 Silicon NPN epitaxial planer type For low-frequency amplification Unit mm 5.0 0.2 4.0 0.2 Features High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). High emitter to base voltage VEBO. Low noise voltage NV. Absolute Maximum Ratings (Ta=25 C) +0.2 +0.2 0.45 0.1 0.45 0.1 Parameter Symbol Ratings Unit 1.27 1.2

Transistor 2SD1010 Silicon NPN epitaxial planer type For low-frequency amplification Unit mm 5.0 0.2 4.0 0.2 Features High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). High emitter to base voltage VEBO. Low noise voltage NV. Absolute Maximum Ratings (Ta=25 C) +0.2 +0.2 0.45 0.1 0.45 0.1 Parameter Symbol Ratings Unit 1.27 1.2

SD1015 PCB 24

HG RF POWER TRANSISTOR SD1013-3 Semiconductors HG ROHS Compliance,Silicon NPN POWER TRANSISTOR Note Above parameters , ratings , limits and conditions are subject to change. Sep. 1998 www.HGSemi.com HG RF POWER TRANSISTOR SD1013-3 Semiconductors HG ROHS Compliance,Silicon NPN POWER TRANSISTOR Note Above parameters , ratings , limits and conditions are subject to change. Sep.

HG RF POWER TRANSISTOR SD1019-2 Semiconductors HG ROHS Compliance,Silicon NPN POWER TRANSISTOR DESCRIPTION PACKAGE STYLE .380 4 LEAD FLG The HG SD1019-2 is Designed for VHF Communications up to 136 MHz FEATURES PG = 4.5 dB Minimum at 150 MHz Omnigold Metallization System MAXIMUM RATINGS IC 9.0 A VCB 65 V VCE 35 V PDISS 117 W @ TC = 25 OC TJ -65 OC to +200 OC TSTG -65 OC t

HG RF POWER TRANSISTOR SD1014-02 Semiconductors HG ROHS Compliance,Silicon NPN POWER TRANSISTOR D E S C R I P T I O N K E Y F E A T U R E S D E S C R I P T I O N K E Y F E A T U R E S D E S C R I P T I O N K E Y F E A T U R E S D E S C R I P T I O N K E Y F E A T U R E S The SD1014-02 is an epitaxial silicon NPN planar transistor MHz 175 designed primarily for VHF mobile and mar

HG RF POWER TRANSISTOR SD1013 Semiconductors HG ROHS Compliance,Silicon NPN POWER TRANSISTOR Features Features 150 MHz 28 VOLTS POUT = 10 WATTS GP = 10 dB MINIMUM COMMON EMITTER CONFIGURATION DESCRIPTION DESCRIPTION The SD1013 is an epitaxial silicon NPN planar transistor designed primarily for VHF FM applications. The device utilizes emitter ballasting r

isc Product Specification isc Silicon NPN Power Transistor 2SD1016 DESCRIPTION High Collector-Base Voltage- V = 1500V(Min) CBO High Current Capability 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in large screen color deflection circuits . ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMB