S9012I . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

S9012-G MCC Micro Commercial Components TM S9012-H 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 S9012-I Phone (818) 701-4933 Fax (818) 701-4939 Features TO-92 Plastic-Encapsulate Transistors Capable of 0.625Watts(Tamb=25OC) of Power Dissipation. PNP Silicon Collector-current 0.5A Collector-base Voltage 40V Transistors Operating a

SS9012 1W Output Amplifier of Potable Radios in Class B Push-pull Operation. High total power dissipation. (PT=625mW) High Collector Current. (IC= -500mA) Complementary to SS9013 Excellent hFE linearity. TO-92 1 1. Emitter 2. Base 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25 C unless otherwise noted Symbol Parameter Ratings Units V

SS9012 PNP EPITAXIAL SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS TO-92 B PUSH-PULL OPERATION. High total power dissipation. (PT=625mW) High Collector Current. (IC= -500mA) Complementary to SS9013 Excelent hFE linearity. ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit V Collector-Base Voltage VCBO -40 V Collector-Emitter

MCC Micro Commercial Components MMS9012-L TM 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 MMS9012-H Phone (818) 701-4933 Fax (818) 701-4939 Features SOT-23 Plastic-Encapsulate Transistors PNP Silicon Capable of 0.3Watts(Tamb=25OC) of Power Dissipation. Collector-current 0.5A Plastic-Encapsulate Collector-base Voltage 40V Operating

MCC Micro Commercial Components MMS9012-L TM 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 MMS9012-H Phone (818) 701-4933 Fax (818) 701-4939 Features SOT-23 Plastic-Encapsulate Transistors PNP Silicon Capable of 0.3Watts(Tamb=25OC) of Power Dissipation. Collector-current 0.5A Plastic-Encapsulate Collector-base Voltage 40V Operating

STS9012 Semiconductor Semiconductor PNP Silicon Transistor Description General purpose application. Switching application. Features Excellent hFE linearity. Complementary pair with STS9013 Ordering Information Type NO. Marking Package Code STS9012 STS9012 TO-92 Outline Dimensions unit mm 3.45 0.1 4.5 0.1 2.25 0.1 0.4 0.02 2.06 0.1 1.27 Typ. 2.54

S9012 PNP Silicon Elektronische Bauelemente General Purpose Transistor RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free SOT-23 FEATURES Collector Dim Min Max 3 3 A 2.800 3.040 B 1.200 1.400 Power dissipation 1 1 C 0.890 1.110 2 Base PCM 0.3 W D 0.370 0.500 Collector Current G 1.780 2.040 2 ICM - 0.5 A A Emitter H 0.013 0.100 L Collector-base v

S9012T PNP Epitaxial Silicon Transistor RoHS Compliant Product TO-92 A suffix of "-C" specifies halogen & lead-free 4.55 0.2 3.5 0.2 FEATURE Power dissipation PCM 0.625 W Tamb=25 Collector current ICM -0.5 A 0.43+0.08 0.07 46+0.1 0. 0.1 Collector-base voltage V(BR)CBO -40 V (1.27 Typ.) 1 Emitter Operating and storage junction temperature range +0.2 1.

TRANSISTOR (PNP) 1. EMITTER 2. BASE 3. COLLECTOR Equivalent Circuit XXX

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-323 Plastic-Encapsulate Transistors JC T SOT-323 S9012W TRANSISTOR (PNP) FEATURES 1. BASE 2. EMITTER Complementary to S9013W 3. COLLECTOR Excellent hFE linearity MARKING 2T1 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter

S901 2 SOT-23 TRANSISTOR(PNP) FEATURES 1. BASE Complementary to S9013 2. EMITTER Excellent hFE linearity 3. COLLECTOR MARKING 2T1 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO -40 V Collector-Base Voltage VCEO -25 V Collector-Emitter Voltage VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -500 mA PC Collect

Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. GM9012 FEATURES FEATURES FEATURES Excellent HFE Linearity HFE hFE(2)=25(Min.) at VCE=6V,Ic=400mA. Complementary to GM9013 GM9013 MAXIMUM RATINGS (Ta=25 ) MAXIMUM RATIN

S9012 PNP Silicon Epitaxial Planar Transistor FEATURES A SOT-23 High Collector Current.(IC= -500mA Dim Min Max A 2.70 3.10 E Complementary To S9013. B 1.10 1.50 K B C 1.0 Typical Excellent HFE Linearity. D 0.4 Typical E 0.35 0.48 J D G 1.80 2.00 APPLICATIONS G H 0.02 0.1 J 0.1 Typical High Collector Current. H K 2.20 2.60 C All Dimensions in mm MAXIMUM

S9012 SOT-23 Transistor(PNP) SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features Complementary to S9013 Excellent hFE linearity MARKING 2T1 Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO -40 V Collector-Base Voltage VCEO -25 V Collector-Emitter Voltage VEBO Emitter-Base Voltage -5 V IC Coll

S9012(PNP) TO-92 Bipolar Transistors 1. EMITTER TO-92 2. BASE 3. COLLECTOR Features Complementary to S9013 Excellent hFE linearity MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO -40 V Collector-Base Voltage VCEO -25 V Collector-Emitter Voltage VEBO Emitter-Base Voltage -5 V Dimensions in inches and (millimeters) IC Collector

S9012 PNP General Purpose Transistors TO-92 P b Lead(Pb)-Free 1. EMITTER 1 2 2. BASE 3 3. COLLECTOR ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating Symbol Value Unit Collector-Emitter Voltage V CEO -25 Vdc Collector-Base Voltage VCBO -40 Vdc Emitter-Base Voltage VEBO -5 Vdc Collector Current IC -500 mAdc PCM Total Device Dissipation T =25 C 0.625 W A Junction Temperature T 15

S9012LT1 PNP General Purpose Transistors 3 P b Lead(Pb)-Free 1 2 SOT-23 Value V CEO -20 -40 -5 -500 300 2.4 417 S9012PLT1=12P S9012QLT1=12Q S9012RLT1=12R S9012SLT1=12S -0.1 -20 -100 -40 -5.0 -100 u -0.15 -35 -0.15 u -4.0 WEITRON 1/2 28-Apr-2011 http //www.weitron.com.tw S9012LT1 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued) Characterist

Shenzhen Tuofeng Semiconductor Technology Co., Ltd TO-92 Plastic-Encapsulate Transistors S9012 TRANSISTOR (PNP) TO-92 1. EMITTER FEATURE Power dissipation 2. BASE PCM 0.625 W (Tamb=25 ) 3. COLLECTOR Collector current ICM -0.5 A 1 2 3 Collector-base voltage V(BR)CBO -40 V Operating and storage junction temperature range Tj, Tstg -55 to +150

Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors SOT-23 1. BASE S9012LT1 TRANSISTOR (PNP) 2. EMITTER 3. COLLECTOR FEATURES Power dissipation 2. 4 PCM 0.3 W (Tamb=25 ) 1. 3 Collector current ICM -0.5 A Collector-base voltage V(BR)CBO -40 V Operating and storage junction temperature range Unit mm TJ, Tst

Bruckewell Technology Corp., Ltd. PNP EPITAXIAL SILICON TRANSISTOR S9012LT FEATURES Excellent HFE Linearity HFE hFE(2)=25(Min.) at VCE=6V ,Ic=400m High Total Power Dissipation Pc=225mW MECHANICAL DATA * Case SOT-23 Molded plastic * Epoxy UL94V-O rate flame retardant SOT-23 Dimensions in millimeter MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Maximum Ratings (T

Product specification PNP Silicon Epitaxial Planar Transistor S9012 FEATURES Pb High Collector Current.(I = -500mA C Lead-free Complementary To S9013. Excellent H Linearity. FE APPLICATIONS High Collector Current. SOT-23 ORDERING INFORMATION Type No. Marking Package Code S9012 2T1 SOT-23 none is for Lead Free package; G is fo

S9012 PNP Silicon Epitaxial Planar Transistor FEATURES High Collector Current.(IC= -500mA Complementary To S9013. Excellent HFE Linearity. APPLICATIONS High Collector Current. SOT-23 MAXIMUM RATING @ Ta=25 unless otherwise specified Symbol Parameter Value Units Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -25 V Emitter-Base Voltage VEB

R UMW UMW S9012 SOT-23 Plastic-Encapsulate Transistors S9012 TRANSISTOR (PNP) SOT-23 FEATURES High Collector Current Complementary To S9013 1. BASE Excellent hFE Linearity 2. EMITTER 3. COLLECTOR MARKING 2T1 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO

S9012 PNP SMD Transistors FEATURES SOT 23 High Collector Current Complementary To S9013 Excellent hFE Linearity MARKING 2T1 1. BASE 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -5 V IC Collector Current -500

S9012 Transistors SOT-23 Plastic-Encapsulate Transistors(PNP) RHOS Features SOT-23 As complementary type the NPN transistor S9013 is recommended Epitaxial planar die construction Maximum Ratings (Ratings at 25 ambient temperature unless otherwise specified.) Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V 1. BASE VCEO Collector-Emitter Voltage -25

S9012 TRANSISTOR (PNP) FEATURES SOT-23 High Collector Current Complementary To S9013 Excellent hFE Linearity 3 2 MARKING 2T1 1 1. BASE 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -5 V IC Collector Current -500 mA

PNP SMD Transistors Formosa MS S9012 SOT 23 FEATURES High Collector Current Complementary To S9013 Excellent hFE Linearity 1. BASE 2. EMITTER MARKING 2T1 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -5 V IC Collector

S9 012 SOT-23 Plastic-Encapsulate Transistors TRANSISTOR( P NP ) Features SOT- 23 High Collector Current. Complementary to S9013. Excellent hFE Linearity. Marking 2T1 Symbol Parameter Value Unit VCBO Collector-Base Voltage -40 V V Collector-Emitter Voltage -25 V CEO C V Emitter-Base Voltage -5 V EBO I Collector Current -500 mA C P Collector Po

S9012 PNP Epitaxial Silicon Transistor TO-92 4.55 0.2 3.5 0.2 FEATURE Power dissipation PCM 0.625 W Tamb=25 Collector current ICM -0.5 A 0.43+0.08 0.07 46+0.1 0. 0.1 Collector-base voltage V(BR)CBO -40 V (1.27 Typ.) 1 Emitter Operating and storage junction temperature range +0.2 1.25 0.2 2 Base 1 2 3 Tj, Tstg -55 to +150 3 Collector 2.54 0.1

S9012 PNP Silicon Epitaxial Planar Transistors for switching and amplifier applications. FEATURES High Collector Current. Complementary to S9013. Excellent hFE Linearity. SOT-23 Plastic Package MARKING 2T1 O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage VCBO -40 V Collector Emitter Voltage VCEO -25 V Emitter Base Voltage VE

www.msksemi.com S9012-MS Semiconductor Compiance Semiconductor Compiance TRANSISTOR (PNP) FEATURES High Collector Current Complementary To 1. BASE S9013-MS 2. EMITTER SOT 23 MARKING 2T1 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base

S9012 PNP Transistors 3 2 1.Base 2.Emitter Features 1 3.Collector Excellent hFE liearity Simplified outline(SOT-23) Collector Current IC=-0.5A Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -40 V Collector - Emitter Voltage VCEO -25 V Emitter - Base Voltage VEBO -5 V Collector Current to Continuous IC -500 mA Collector Power Dis

Jingdao Microelectronics co.LTD S9012 General Purpose Transistor PNP Silicon FEATURES High Collector Current Complementary To S9013 Excellent hFE Linearity SOT-23 3 COLLECTOOR 3 1 DEVICE MARKING BASE S9012 = 2T1 1 2 EMITTER 2 MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage VCEO -25 Vdc

S9012 S9012 S9012 S9012 S9 0 12 TRANSISTOR(PNP) FEATURES High Collector Current SOT-23 Complementary To S9013 Excellent hFE Linearity 1 BASE 2 EMITTER MARKING 2T1 3 COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO -40 V Collector-Base Voltage VCEO -25 V Collector-Emitter Voltage VEBO Emitter-Base Voltage -5

S9012 S9012 PNP Transistors General description SOT-23 Plastic-Encapsulate Transistors FEATURES Complementary to S9013 Power Dissipation of 300mW High Stability and High Reliability MECHANICAL DATA SOT-23 Small Outline Plastic Package Epoxy UL 94V-0 Mounting Position Any Marking 2T1 Maximum Ratings & Thermal Characteristics TA = 25 C un

S9012 TRANSISTOR (PNP) FEATURES SOT-23 Complementary to S9013 Excellent hFE linearity 1 BASE 2 EMITTER 3 COLLECTOR MARKING 2T1 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO -40 V Collector-Base Voltage VCEO -25 V Collector-Emitter Voltage VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -500 mA PC Col

S9012W/SOT323 TRANSISTOR (PNP) FEATURES Complementary to S9013T Excellent h linearity FE MARKING 2T1 MAXIMUM RATINGS (T =25 unless otherwise noted) A Symbol Parameter Value Units V -40 V CBO Collector-Base Voltage VCEO Collector-Emitter Voltage -25 V V EBO Emitter-Base Voltage -5 V I Collector Current -Continuous -500 mA C P Collector Power Dissipation 300 mW C T Junc

S9012T TRANSISTOR PNP FEATURES SOT-523 Complementary to S9013T Excellent hFE linearity 1. BASE 2. EMITTER MARKING 2T1 3. COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO -40 V Collector-Base Voltage VCEO -25 V Collector-Emitter Voltage VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -500 mA PC C

S9012 PNP GENERAL PURPOSE SWITCHING TRANSISTOR 25Volts POWER 300mWatts VOLTAGE FEATURES PNP epitaxial silicon, planar design. Collector-emitter voltage VCE=-25V. Collector current IC=-0.5A. ansition frequency fT>150MHz @ IC=- Tr 20mAdc, VCE=-6Vdc, f=30MHz. In compliance with ER RoHS 2002/95/EC directives. MECHANICAL DATA Case SOT-23, Plastic 3 Terminals Sol

S9012 BIPOLAR TRANSISTOR (PNP) FEATURES Complementary to S9013 Excellent h Linearity FE High Collector Current Surface Mount device SOT-23 MECHANICAL DATA Case SOT-23 Case Material Molded Plastic. UL flammability Classification Rating 94V-0 Weight 0.008 grams (approximate) MAXIMUM RATINGS (T = 25 C unless otherwise noted) A Parameter Symbol

Features A SOT-23 C Dim Min Max A 0.37 0.51 B C B 1.20 1.40 TOP VIEW B E C D 2.30 2.50 E G D 0.89 1.03 E 0.45 0.60 H G 1.78 2.05 K H 2.80 3.00 J J 0.013 0.10 Maximum Ratings @

isc Silicon PNP Power Transistor S9012 DESCRIPTION Excellent hFE linearity Complement to NPN Type S9013 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage -40 V CBO V Collector-Emitter Voltage -25 V CEO V Emitt