S9012LT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: S9012LT

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.3 W

Tensión colector-base (Vcb): 40 V

Tensión colector-emisor (Vce): 30 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 0.5 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 300 MHz

Capacitancia de salida (Cc): 7 pF

Ganancia de corriente contínua (hFE): 70

Encapsulados: SOT23

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S9012LT datasheet

 ..1. Size:939K  bruckewell
s9012lt.pdf pdf_icon

S9012LT

Bruckewell Technology Corp., Ltd. PNP EPITAXIAL SILICON TRANSISTOR S9012LT FEATURES Excellent HFE Linearity HFE hFE(2)=25(Min.) at VCE=6V ,Ic=400m High Total Power Dissipation Pc=225mW MECHANICAL DATA * Case SOT-23 Molded plastic * Epoxy UL94V-O rate flame retardant SOT-23 Dimensions in millimeter MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Maximum Ratings (T

 0.1. Size:238K  wietron
s9012lt1.pdf pdf_icon

S9012LT

S9012LT1 PNP General Purpose Transistors 3 P b Lead(Pb)-Free 1 2 SOT-23 Value V CEO -20 -40 -5 -500 300 2.4 417 S9012PLT1=12P S9012QLT1=12Q S9012RLT1=12R S9012SLT1=12S -0.1 -20 -100 -40 -5.0 -100 u -0.15 -35 -0.15 u -4.0 WEITRON 1/2 28-Apr-2011 http //www.weitron.com.tw S9012LT1 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued) Characterist

 0.2. Size:371K  shenzhen
s9012lt1.pdf pdf_icon

S9012LT

Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors SOT-23 1. BASE S9012LT1 TRANSISTOR (PNP) 2. EMITTER 3. COLLECTOR FEATURES Power dissipation 2. 4 PCM 0.3 W (Tamb=25 ) 1. 3 Collector current ICM -0.5 A Collector-base voltage V(BR)CBO -40 V Operating and storage junction temperature range Unit mm TJ, Tst

 8.1. Size:574K  umw-ic
s9012l s9012h s9012j.pdf pdf_icon

S9012LT

R UMW UMW S9012 SOT-23 Plastic-Encapsulate Transistors S9012 TRANSISTOR (PNP) SOT-23 FEATURES High Collector Current Complementary To S9013 1. BASE Excellent hFE Linearity 2. EMITTER 3. COLLECTOR MARKING 2T1 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO

Otros transistores... S8550C, S8550D, S8550G, S9011, S9011LT1, S9012G, S9012H, S9012I, BD222, S9012W, S9013G, S9013H, S9013I, S9014B, S9014C, S9014D, S9015B