SBC807-25WT1G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: SBC807-25WT1G
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

   Disipación total del dispositivo (Pc): 0.15 W
   Tensión colector-base (Vcb): 50 V
   Tensión colector-emisor (Vce): 45 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 0.5 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   Transición de frecuencia (ft): 100 MHz
   Capacitancia de salida (Cc): 10 pF
   Ganancia de corriente contínua (hfe): 160
   Paquete / Cubierta: SOT323

Búsqueda de reemplazo de transistor bipolar SBC807-25WT1G

SBC807-25WT1G Datasheet (PDF)

..1. Size:74K onsemi
sbc807-25wt1g.pdf

BC807-25W, BC807-40WGeneral PurposeTransistorsPNP Siliconhttp://onsemi.comFeatures S Prefix for Automotive and Other Applications Requiring UniqueSite and Control Change Requirements; AEC-Q101 Qualified andCOLLECTORPPAP Capable 3 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant 1BASE2MAXIMUM RATINGSEMITTERRating Symbol Value UnitColl

5.1. Size:89K onsemi
sbc807-25lt1g.pdf

BC807-16L, BC807-25L,BC807-40LGeneral PurposeTransistorsPNP Siliconwww.onsemi.comFeatures S Prefix for Automotive and Other Applications Requiring UniqueCOLLECTORSite and Control Change Requirements; AEC-Q101 Qualified and3PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS1Compliant BASE2EMITTERMAXIMUM RATINGSRating Symbol Value

5.2. Size:89K onsemi
sbc807-25lt3g.pdf