SBC847BDW1T3G Todos los transistores

 

SBC847BDW1T3G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SBC847BDW1T3G
   Código: 1F
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.38 W
   Tensión colector-base (Vcb): 50 V
   Tensión colector-emisor (Vce): 45 V
   Tensión emisor-base (Veb): 6 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 100 MHz
   Capacitancia de salida (Cc): 4.5 pF
   Ganancia de corriente contínua (hfe): 200
   Paquete / Cubierta: SOT363
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SBC847BDW1T3G Datasheet (PDF)

 ..1. Size:144K  onsemi
sbc847bdw1t3g.pdf pdf_icon

SBC847BDW1T3G

BC846BDW1T1G,SBC846BDW1T1G,BC847BDW1T1G,SBC847BDW1T1G Series,NSVBC847BDW1T2G,BC848CDW1T1Ghttp://onsemi.comDual General PurposeTransistorsSOT-363CASE 419BNPN DualsSTYLE 1These transistors are designed for general purpose amplifierapplications. They are housed in the SOT-363/SC-88 which is(3) (2) (1)designed for low power surface mount applications.FeaturesQ1 Q

 3.1. Size:144K  onsemi
sbc847bdw1t1g.pdf pdf_icon

SBC847BDW1T3G

BC846BDW1T1G,SBC846BDW1T1G,BC847BDW1T1G,SBC847BDW1T1G Series,NSVBC847BDW1T2G,BC848CDW1T1Ghttp://onsemi.comDual General PurposeTransistorsSOT-363CASE 419BNPN DualsSTYLE 1These transistors are designed for general purpose amplifierapplications. They are housed in the SOT-363/SC-88 which is(3) (2) (1)designed for low power surface mount applications.FeaturesQ1 Q

 7.1. Size:110K  onsemi
bc847bpdxv6 sbc847bpdxv6.pdf pdf_icon

SBC847BDW1T3G

BC847BPDXV6,SBC847BPDXV6NPN/PNP Dual GeneralPurpose TransistorThis transistor is designed for general purpose amplifierapplications. It is housed in the SOT-563 which is designed for lowhttp://onsemi.compower surface mount applications.Features(3) (2) (1) S Prefix for Automotive and Other Applications Requiring UniqueSite and Control Change Requirements; AEC-Q101 Qualif

 7.2. Size:123K  onsemi
sbc847blt1g.pdf pdf_icon

SBC847BDW1T3G

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsNPN SiliconSBC847BLT1G Moisture Sensitivity Level: 1 ESD Rating Human Body Model: >4000 VESD Rating Machine Model: >400 V3 We declare that the material of product compliance with RoHS requirements.1MAXIMUM RATINGS2Rating Symbol Value UnitSOT23CollectorEmitter Voltage VCEO 45 Vdc3COLLECT

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: KRA572U | TIS61 | BUL3P5 | MPS834

 

 
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