SBC848BLT1G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SBC848BLT1G
Código: 1K
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.23 W
Tensión colector-base (Vcb): 30 V
Tensión colector-emisor (Vce): 30 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 100 MHz
Capacitancia de salida (Cc): 4.5 pF
Ganancia de corriente contínua (hfe): 150
Paquete / Cubierta: SOT23
Búsqueda de reemplazo de transistor bipolar SBC848BLT1G
SBC848BLT1G Datasheet (PDF)
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LESHAN RADIO COMPANY, LTD.General Purpose TransistorsNPN SiliconSBC847BLT1G Moisture Sensitivity Level: 1 ESD Rating Human Body Model: >4000 VESD Rating Machine Model: >400 V3 We declare that the material of product compliance with RoHS requirements.1MAXIMUM RATINGS2Rating Symbol Value UnitSOT23CollectorEmitter Voltage VCEO 45 Vdc3COLLECT
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BC847CDXV6T1G,SBC847CDXV6T1G,BC847CDXV6T5G,BC848CDXV6T1GDual General Purposehttp://onsemi.comTransistors(3) (2) (1)NPN DualsThese transistors are designed for general purpose amplifierQ1 Q2applications. They are housed in the SOT-563 which is designed forlow power surface mount applications.(4) (5) (6)Features AEC-Q101 Qualified and PPAP CapableBC847CDXV6T1
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sbc847bpdw1t3g.pdf
BC846BPDW1,BC847BPDW1,BC848CPDW1 SeriesDual General PurposeTransistorshttp://onsemi.comNPN/PNP Duals (Complementary)These transistors are designed for general purpose amplifierapplications. They are housed in the SOT-363/SC-88 which isSOT-363designed for low power surface mount applications.CASE 419BSTYLE 1Features(3) (2) (1) S Prefix for Automotive and Other Ap
sbc847cwt3g.pdf
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sbc846bwt1g.pdf
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sbc847bpdw1t1g.pdf
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