SBC856ALT1G Todos los transistores

 

SBC856ALT1G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SBC856ALT1G
   Código: 3A
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.23 W
   Tensión colector-base (Vcb): 80 V
   Tensión colector-emisor (Vce): 65 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 100 MHz
   Capacitancia de salida (Cc): 4.5 pF
   Ganancia de corriente contínua (hfe): 90
   Paquete / Cubierta: SOT23

 Búsqueda de reemplazo de transistor bipolar SBC856ALT1G

 

SBC856ALT1G Datasheet (PDF)

 8.1. Size:156K  onsemi
bc856bdw1t1g sbc856bdw1t1g bc857bdw1t1g sbc857bdw1t1g bc857cdw1t1g sbc857cdw1t1g bc858cdw1t1g.pdf

SBC856ALT1G
SBC856ALT1G

BC856BDW1T1G,SBC856BDW1T1G Series,BC857BDW1T1G,SBC857BDW1T1G Series,BC858CDW1T1G Serieswww.onsemi.comDual General PurposeTransistorsPNP DualsSOT-363/SC-88These transistors are designed for general purpose amplifierCASE 419BSTYLE 1applications. They are housed in the SOT-363/SC-88 which isdesigned for low power surface mount applications.(3) (2) (1)Features S

 8.2. Size:181K  onsemi
sbc856bdw1t1g.pdf

SBC856ALT1G
SBC856ALT1G

BC856BDW1T1G,SBC856BDW1T1G Series,BC857BDW1T1G,SBC857BDW1T1G Series,BC858CDW1T1G SeriesPreferred Deviceshttp://onsemi.comDual General PurposeTransistorsPNP DualsSOT-363/SC-88CASE 419BSTYLE 1These transistors are designed for general purpose amplifierapplications. They are housed in the SOT-363/SC-88 which is(3) (2) (1)designed for low power surface mount applicat

 8.3. Size:81K  onsemi
sbc856bwt1g.pdf

SBC856ALT1G
SBC856ALT1G

BC856B, BC857B, BC858AGeneral PurposeTransistorsPNP SiliconThese transistors are designed for general purpose amplifierwww.onsemi.comapplications. They are housed in the SC-70/SOT-323 which isdesigned for low power surface mount applications.COLLECTOR3Features S and NSV Prefix for Automotive and Other Applications Requiring1Unique Site and Control Change Requirement

 8.4. Size:181K  onsemi
sbc856bdw1t3g.pdf

SBC856ALT1G
SBC856ALT1G

BC856BDW1T1G,SBC856BDW1T1G Series,BC857BDW1T1G,SBC857BDW1T1G Series,BC858CDW1T1G SeriesPreferred Deviceshttp://onsemi.comDual General PurposeTransistorsPNP DualsSOT-363/SC-88CASE 419BSTYLE 1These transistors are designed for general purpose amplifierapplications. They are housed in the SOT-363/SC-88 which is(3) (2) (1)designed for low power surface mount applicat

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: NB011ET

 

 
Back to Top

 


History: NB011ET

SBC856ALT1G
  SBC856ALT1G
  SBC856ALT1G
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores:

BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050

 

 

 
Back to Top