SBC856BWT1G Todos los transistores

 

SBC856BWT1G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SBC856BWT1G
   Código: 3F
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.15 W
   Tensión colector-base (Vcb): 80 V
   Tensión colector-emisor (Vce): 65 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 100 MHz
   Capacitancia de salida (Cc): 4.5 pF
   Ganancia de corriente contínua (hfe): 220
   Paquete / Cubierta: SOT323
 

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SBC856BWT1G Datasheet (PDF)

 ..1. Size:81K  onsemi
 sbc856bwt1g.pdf pdf_icon

SBC856BWT1G

BC856B, BC857B, BC858AGeneral PurposeTransistorsPNP SiliconThese transistors are designed for general purpose amplifierwww.onsemi.comapplications. They are housed in the SC-70/SOT-323 which isdesigned for low power surface mount applications.COLLECTOR3Features S and NSV Prefix for Automotive and Other Applications Requiring1Unique Site and Control Change Requirement

 7.1. Size:156K  onsemi
 bc856bdw1t1g sbc856bdw1t1g bc857bdw1t1g sbc857bdw1t1g bc857cdw1t1g sbc857cdw1t1g bc858cdw1t1g.pdf pdf_icon

SBC856BWT1G

BC856BDW1T1G,SBC856BDW1T1G Series,BC857BDW1T1G,SBC857BDW1T1G Series,BC858CDW1T1G Serieswww.onsemi.comDual General PurposeTransistorsPNP DualsSOT-363/SC-88These transistors are designed for general purpose amplifierCASE 419BSTYLE 1applications. They are housed in the SOT-363/SC-88 which isdesigned for low power surface mount applications.(3) (2) (1)Features S

 7.2. Size:181K  onsemi
 sbc856bdw1t1g.pdf pdf_icon

SBC856BWT1G

BC856BDW1T1G,SBC856BDW1T1G Series,BC857BDW1T1G,SBC857BDW1T1G Series,BC858CDW1T1G SeriesPreferred Deviceshttp://onsemi.comDual General PurposeTransistorsPNP DualsSOT-363/SC-88CASE 419BSTYLE 1These transistors are designed for general purpose amplifierapplications. They are housed in the SOT-363/SC-88 which is(3) (2) (1)designed for low power surface mount applicat

 7.3. Size:181K  onsemi
 sbc856bdw1t3g.pdf pdf_icon

SBC856BWT1G

BC856BDW1T1G,SBC856BDW1T1G Series,BC857BDW1T1G,SBC857BDW1T1G Series,BC858CDW1T1G SeriesPreferred Deviceshttp://onsemi.comDual General PurposeTransistorsPNP DualsSOT-363/SC-88CASE 419BSTYLE 1These transistors are designed for general purpose amplifierapplications. They are housed in the SOT-363/SC-88 which is(3) (2) (1)designed for low power surface mount applicat

MOSTRAR MÁS

Otros transistores... SBC847CWT1G , SBC847CWT3G , SBC848BLT1G , SBC856ALT1G , SBC856BDW1T1G , SBC856BDW1T3G , SBC856BLT1G , SBC856BLT3G , A1013 , SBC857ALT1G , SBC857BDW1T1G , SBC857BLT1G , SBC857BWT1G , SBC857CDW1T1G , SBC857CLT1G , SBCP53-10T1G , SBCP53-16T1G .

History: ST13005N | BUL45D2G | 2SC87 | NSVB1706DMW5T1G | BC818K-16 | OC73 | CMPT930

 

 
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