SBC857BLT1G Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SBC857BLT1G

Código: 3F

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.23 W

Tensión colector-base (Vcb): 50 V

Tensión colector-emisor (Vce): 45 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 0.1 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 100 MHz

Capacitancia de salida (Cc): 4.5 pF

Ganancia de corriente contínua (hFE): 150

Encapsulados: SOT23

 Búsqueda de reemplazo de SBC857BLT1G

- Selecciónⓘ de transistores por parámetros

 

SBC857BLT1G datasheet

 7.1. Size:156K  onsemi
bc856bdw1t1g sbc856bdw1t1g bc857bdw1t1g sbc857bdw1t1g bc857cdw1t1g sbc857cdw1t1g bc858cdw1t1g.pdf pdf_icon

SBC857BLT1G

BC856BDW1T1G, SBC856BDW1T1G Series, BC857BDW1T1G, SBC857BDW1T1G Series, BC858CDW1T1G Series www.onsemi.com Dual General Purpose Transistors PNP Duals SOT-363/SC-88 These transistors are designed for general purpose amplifier CASE 419B STYLE 1 applications. They are housed in the SOT-363/SC-88 which is designed for low power surface mount applications. (3) (2) (1) Features S

 7.2. Size:181K  onsemi
sbc857bdw1t1g.pdf pdf_icon

SBC857BLT1G

BC856BDW1T1G, SBC856BDW1T1G Series, BC857BDW1T1G, SBC857BDW1T1G Series, BC858CDW1T1G Series Preferred Devices http //onsemi.com Dual General Purpose Transistors PNP Duals SOT-363/SC-88 CASE 419B STYLE 1 These transistors are designed for general purpose amplifier applications. They are housed in the SOT-363/SC-88 which is (3) (2) (1) designed for low power surface mount applicat

 7.3. Size:156K  onsemi
bc856bdw1t1g bc857bdw1t1g sbc857bdw1t1g bc857cdw1t1g bc858cdw1t1g.pdf pdf_icon

SBC857BLT1G

BC856BDW1T1G, SBC856BDW1T1G Series, BC857BDW1T1G, SBC857BDW1T1G Series, BC858CDW1T1G Series www.onsemi.com Dual General Purpose Transistors PNP Duals SOT-363/SC-88 These transistors are designed for general purpose amplifier CASE 419B STYLE 1 applications. They are housed in the SOT-363/SC-88 which is designed for low power surface mount applications. (3) (2) (1) Features S

 7.4. Size:81K  onsemi
sbc857bwt1g.pdf pdf_icon

SBC857BLT1G

BC856B, BC857B, BC858A General Purpose Transistors PNP Silicon These transistors are designed for general purpose amplifier www.onsemi.com applications. They are housed in the SC-70/SOT-323 which is designed for low power surface mount applications. COLLECTOR 3 Features S and NSV Prefix for Automotive and Other Applications Requiring 1 Unique Site and Control Change Requirement

Otros transistores... SBC856ALT1G, SBC856BDW1T1G, SBC856BDW1T3G, SBC856BLT1G, SBC856BLT3G, SBC856BWT1G, SBC857ALT1G, SBC857BDW1T1G, TIP42, SBC857BWT1G, SBC857CDW1T1G, SBC857CLT1G, SBCP53-10T1G, SBCP53-16T1G, SBCP53T1G, SBCP56-10T1G, SBCP56-16T1G