SD1134 Todos los transistores

 ..1. Size:47K  st
 sd1134.pdf

SD1134 RF & MICROWAVE TRANSISTORS UHF MOBILE APPLICATIONS .450 - 512 MHz .12.5 VOLTS .EFFICIENCY 55% .COMMON EMITTER .P 2.0 W MIN. WITH 10.0 dB GAIN OUT = .280 4L STUD (M122) epoxy sealed ORDER CODE BRANDING SD1134 SD1134 PIN CONNECTION DESCRIPTION The SD1134 is a 12.5 V Class C epitaxial silicon NPN planar transistor designed primarily for UHF communications. This device utili

 ..2. Size:350K  hgsemi
 sd1134.pdf

HG RF POWER TRANSISTOR SD1134 Semiconductors HG ROHS Compliance,Silicon NPN POWER TRANSISTOR .450 - 512 MHz .12.5 VOLTS .EFFICIENCY 55% .COMMON EMITTER .P 2.0 W MIN. WITH 10.0 dB GAIN OUT = .280 4L STUD (M122) epoxy sealed ORDER CODE BRANDING SD1134 SD1134 PIN CONNECTION DESCRIPTION The SD1134 is a 12.5 V Class C epitaxial silicon NPN planar transistor designed primarily for U

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 sd1134-05.pdf

SD1134-05 RF & MICROWAVE TRANSISTORS VHF PORTABLE/MOBILE APPLICATIONS .175 MHz .7.5 VOLTS .COMMON EMITTER .P 0.5 W MIN. WITH 7.0 dB GAIN = OUT .280 4LSL (M123) epoxy sealed ORDER CODE BRANDING SD1134-05 1134-5 PIN CONNECTION DESCRIPTION The SD1134-05 is a 7.5 V epitaxial silicon NPN planar transistor designed primarily for VHF com- 1. Collector 3. Base munications. It with sta

 0.2. Size:64K  njs
 sd1134-05.pdf

 0.3. Size:43K  hitachi
 2sd1133 2sd1134.pdf

To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAM

 0.4. Size:32K  hitachi
 2sd1133 2sd1134.pdf

2SD1133, 2SD1134 Silicon NPN Triple Diffused Application Low frequency power amplifier complementary pair with 2SB857 and 2SB858 Outline TO-220AB 1. Base 2. Collector (Flange) 1 3. Emitter 2 3 Absolute Maximum Ratings (Ta = 25 C) Ratings Item Symbol 2SD1133 2SD1134 Unit Collector to base voltage VCBO 70 70 V Collector to emitter voltage VCEO 50 60 V Emitter to base voltage VE

 0.5. Size:213K  inchange semiconductor
 2sd1134.pdf

isc Silicon NPN Power Transistor 2SD1134 DESCRIPTION Collector Current I = 4A C Low Collector Saturation Voltage V = 1.0V(Max)@I = 2A CE(sat) C High Collector Power Dissipation Complement to Type 2SB858 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. ABSOLUTE MAXI