SD1219 Todos los transistores

 ..1. Size:264K  hgsemi
 sd1219.pdf

HG RF POWER TRANSISTOR SD1219 Semiconductors HG ROHS Compliance,Silicon NPN POWER TRANSISTOR DESCRIPTION PACKAGE STYLE .380" 4L STUD The SD1219 is Designed for .112x45 A 12.5 V Collector Modulated AM Class C C B Amplifier Service in the 118 to 136 MHz Avionics Communication Band. E E FEATURES C B PG = 8 dB Typical at 60 W/ 175 MHz I D H Guaranteed 13.5 and 28

 9.1. Size:120K  sanyo
 2sd1212.pdf

Ordering number 990C PNP/NPN Epitaxial Planar Silicon Transistors 2SB903/2SD1212 30V/12A High-Speed Switching Applications Applications Package Dimensions Suitable for relay drivers, high-speed inverters, unit mm converters, and other general large-current switching 2010C applications. [2SB903/2SD1212] Features Low collector-to-emitter saturation voltage VCE(sat)=( )0.

 9.2. Size:116K  sanyo
 2sd1213.pdf

Ordering number 1022A PNP/NPN Epitaxial Planar Silicon Transistors 2SB904/2SD1213 30V/12A High-Speed Switching Applications Applications Package Dimensions Large current switching of relay drivers, high-speed unit mm inverters, converters. 2022A [2SB904/2SD1213] Features Low collector-to-emitter saturation voltage VCE(sat)= 0.5V (PNP), 0.4V (NPN) max. Large current

 9.3. Size:49K  panasonic
 2sd1218.pdf

 9.4. Size:37K  panasonic
 2sd1211.pdf

Transistor 2SD1211 Silicon NPN epitaxial planer type For low-frequency amplification Unit mm Complementary to 2SB987 5.9 0.2 4.9 0.2 Features High collector to emitter voltage VCEO. Optimum for the driver-stage of a low-frequency and 40 to 60W output amplifier. 0.7 0.1 2.54 0.15 Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit Collector to base voltage V

 9.5. Size:41K  panasonic
 2sd1211 e.pdf

Transistor 2SD1211 Silicon NPN epitaxial planer type For low-frequency amplification Unit mm Complementary to 2SB987 5.9 0.2 4.9 0.2 Features High collector to emitter voltage VCEO. Optimum for the driver-stage of a low-frequency and 40 to 60W output amplifier. 0.7 0.1 2.54 0.15 Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit Collector to base voltage V

 9.6. Size:41K  no
 2sd1210.pdf

 9.7. Size:48K  no
 2sd1217.pdf

 9.8. Size:87K  jmnic
 2sd1213.pdf

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD1213 DESCRIPTION With TO-3PN package Low collector-to-emitter saturation voltage VCE(sat)= 0.4V(max.) Large current capacity. Complement to type 2SB904 APPLICATIONS Large current switching of relay drivers, high-speed inverters, converters. PINNING PIN DESCRIPTION 1 Base Collector;connect

 9.9. Size:905K  winsok
 wsd1216dn22.pdf

WSD1216DN22 P-Ch MOSFET General Description Product Summery The WSD1216DN22 is the highest performance BVDSS RDSON ID trench P-ch MOSFETs with extreme high cell density , which provide excellent RDSON and -12V 15m -9.4A gate charge for most of the small power switching and load switch applications. Applications The WSD1216DN22 meet the RoHS and Green Product requirement w

 9.10. Size:213K  inchange semiconductor
 2sd1212.pdf

isc Silicon NPN Power Transistor 2SD1212 DESCRIPTION High Collector Current I = 12A C Low Collector Saturation Voltage V = 0.4V(Max)@I = 5A CE(sat) C Complement to Type 2SB903 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for relay drivers, high-speed inverters, converters, and other general large-current switc

 9.11. Size:214K  inchange semiconductor
 2sd1210.pdf

isc Silicon NPN Darlington Power Transistor 2SD1210 DESCRIPTION High DC Current Gain h = 1000(Min.)@ I = 10A FE C Collector-Emitter Sustaining Voltage- V = 100V(Min) CEO(SUS) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio frequency power amplifier and low speed high current switching industrial use. ABS

 9.12. Size:218K  inchange semiconductor
 2sd1213.pdf

isc Silicon NPN Power Transistor 2SD1213 DESCRIPTION High Collector Current I = 20A C Low Collector Saturation Voltage V = 0.4V(Max)@I = 8A CE(sat) C Complement to Type 2SB904 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for large current switching of relay drivers, high-speed inverters,converters applications