SD1272 Todos los transistores

 ..1. Size:963K  hgsemi
 sd1272.pdf

HG RF POWER TRANSISTOR SD1272 Semiconductors HG ROHS Compliance,Silicon NPN POWER TRANSISTOR Note Above parameters , ratings , limits and conditions are subject to change. Sep. 1998 www.HGSemi.com HG RF POWER TRANSISTOR SD1272 Semiconductors HG ROHS Compliance,Silicon NPN POWER TRANSISTOR Note Above parameters , ratings , limits and conditions are subject to change. Sep. 1998

 0.1. Size:45K  panasonic
 2sd1272.pdf

Power Transistors 2SD1272 Silicon NPN triple diffusion planar type For high-speed switching and high current amplification ratio Unit mm 10.0 0.2 4.2 0.2 5.5 0.2 2.7 0.2 Features High foward current transfer ratio hFE 3.1 0.1 Satisfactory linearity of foward current transfer ratio hFE Full-pack package which can be installed to the heat sink with one screw 1.3 0.2

 0.2. Size:945K  hgsemi
 sd1272-2.pdf

HG RF POWER TRANSISTOR SD1272-2 Semiconductors HG ROHS Compliance,Silicon NPN POWER TRANSISTOR Note Above parameters , ratings , limits and conditions are subject to change. Sep. 1998 www.HGSemi.com HG RF POWER TRANSISTOR SD1272-2 Semiconductors HG ROHS Compliance,Silicon NPN POWER TRANSISTOR Note Above parameters , ratings , limits and conditions are subject to change. Sep.

 9.1. Size:80K  st
 sd1275-01.pdf

SD1275-01 RF POWER BIPOLAR TRANSISTORS VHF MOBILE APPLICATIONS FEATURES SUMMARY Figure 1. Package 160 MHz 13.6 VOLTS COMMON EMITTER POUT = 40 W MIN. WITH 9.0 dB GAIN DESCRIPTION The SD1275-01 is a 13.6 V Class C epitaxial sili- con NPN planar transistor designed primarily for VHF communications. The SD1275-01 utilizes an .380 4L FL (M113) emitter ballasted die ge

 9.2. Size:105K  st
 sd1275.pdf

SD1275 RF POWER BIPOLAR TRANSISTORS VHF MOBILE APPLICATIONS FEATURES SUMMARY Figure 1. Package 160 MHz 13.6 VOLTS COMMON EMITTER POUT = 40 W MIN. WITH 9 dB GAIN DESCRIPTION The SD1275 is a 13.6 V Class C epitaxial silicon NPN planar transistor designed primarily for VHF communications. The SD1275 utilizes an emitter .380 4L STUD (M135) ballasted die geometry to w

 9.3. Size:80K  st
 sd1274-01.pdf

SD1274-01 RF POWER BIPOLAR TRANSISTORS VHF MOBILE APPLICATIONS FEATURES SUMMARY Figure 1. Package 160 MHz 13.6 VOLTS COMMON EMITTER POUT = 30 W MIN. WITH 10 dB GAIN DESCRIPTION The SD1274-01 is a 13.6 V Class C epitaxial sili- con NPN planar transistor designed primarily for VHF communications. The SD1274-01 utilizes an .380 4L FL (M113) emitter ballasted die geo

 9.4. Size:760K  st
 sd1274.pdf

SD1274 RF POWER BIPOLAR TRANSISTORS VHF MOBILE APPLICATIONS FEATURES SUMMARY Figure 1. Package 160 MHz 13.6 VOLTS COMMON EMITTER POUT = 30 W MIN. WITH 10 dB GAIN DESCRIPTION The SD1274 is a 13.6 V Class C epitaxial silicon NPN planar transistor designed primarily for VHF communications. The SD1274 utilizes an emitter .380 4L STUD (M135) ballasted die geometry to

 9.5. Size:96K  toshiba
 2sd1279.pdf

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

 9.6. Size:61K  fairchild semi
 ksd1273.pdf

KSD1273 High hFE, AF Power Amplifier Full PAK Package for Simplified Mounting Only by a Screw, Requires no Insulator. TO-220F 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage

 9.7. Size:46K  panasonic
 2sd1273.pdf

Power Transistors 2SD1273, 2SD1273A Silicon NPN triple diffusion planar type For power amplification with high forward current transfer ratio Unit mm Complementary to 2SB1299 10.0 0.2 4.2 0.2 5.5 0.2 2.7 0.2 Features High foward current transfer ratio hFE 3.1 0.1 Satisfactory linearity of foward current transfer ratio hFE Full-pack package which can be installed to the

 9.8. Size:62K  panasonic
 2sd1276.pdf

Power Transistors 2SD1276, 2SD1276A Silicon NPN triple diffusion planar type Darlington Unit mm For power amplification 10.0 0.2 4.2 0.2 5.5 0.2 2.7 0.2 Complementary to 2SB950 and 2SB950A Features High foward current transfer ratio hFE 3.1 0.1 High-speed switching Full-pack package which can be installed to the heat sink with one screw 1.3 0.2 1.4 0.1 Absolute

 9.9. Size:56K  panasonic
 2sd1274.pdf

Power Transistors 2SD1274, 2SD1274A, 2SD1274B Silicon NPN triple diffusion planar type For power amplification Unit mm Features 10.0 0.2 4.2 0.2 5.5 0.2 2.7 0.2 High collector to base voltage VCBO High-speed switching Full-pack package which can be installed to the heat sink with 3.1 0.1 one screw Absolute Maximum Ratings (TC=25 C) 1.3 0.2 Parameter Symbol Ra

 9.10. Size:59K  panasonic
 2sd1271.pdf

Power Transistors 2SD1271, 2SD1271A Silicon NPN epitaxial planar type For power switching Complementary to 2SB946 and 2SB946A Unit mm 10.0 0.2 4.2 0.2 Features 5.5 0.2 2.7 0.2 Low collector to emitter saturation voltage VCE(sat) Satisfactory linearity of foward current transfer ratio hFE 3.1 0.1 Large collector current IC Full-pack package which can be installed to the

 9.11. Size:62K  panasonic
 2sd1277.pdf

Power Transistors 2SD1277, 2SD1277A Silicon NPN triple diffusion planar type Darlington For midium speed power switching Unit mm 10.0 0.2 4.2 0.2 Complementary to 2SB951 and 2SB951A 5.5 0.2 2.7 0.2 Features High foward current transfer ratio hFE 3.1 0.1 High-speed switching Full-pack package which can be installed to the heat sink with one screw 1.3 0.2 1.4 0

 9.12. Size:55K  panasonic
 2sd1270.pdf

Power Transistors 2SD1270 Silicon NPN epitaxial planar type For power switching Unit mm Complementary to 2SB945 10.0 0.2 4.2 0.2 5.5 0.2 2.7 0.2 Features Low collector to emitter saturation voltage VCE(sat) 3.1 0.1 Satisfactory linearity of foward current transfer ratio hFE Large collector current IC Full-pack package which can be installed to the heat sink with one

 9.13. Size:62K  panasonic
 2sd1275.pdf

Power Transistors 2SD1275, 2SD1275A Silicon NPN triple diffusion planar type Darlington Unit mm For power amplification 10.0 0.2 4.2 0.2 Complementary to 2SB949 and 2SB949A 5.5 0.2 2.7 0.2 Features 3.1 0.1 High foward current transfer ratio hFE High-speed switching Full-pack package which can be installed to the heat sink with one screw 1.3 0.2 1.4 0.1 Absolute

 9.14. Size:123K  jmnic
 2sd1275 2sd1275a.pdf

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD1275 2SD1275A DESCRIPTION With TO-220Fa package Complement to type 2SB949,2SB949A High forward current transfer ratio hFE High-speed switching APPLICATIONS For power amplification PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220Fa) and symbol ABSOLUTE MA

 9.15. Size:124K  jmnic
 2sd1277 2sd1277a.pdf

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD1277 2SD1277A DESCRIPTION With TO-220Fa package Complement to type 2SB951 and 2SB951A High forward current transfer ratio hFE High-speed switching APPLICATIONS For medium speed power switching PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220Fa) and symbol

 9.16. Size:107K  jmnic
 2sd1274 2sd1274a 2sd1274b.pdf

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD1274 2SD1274A 2SD1274B DESCRIPTION With TO-220Fa package High VCBO High speed switching APPLICATIONS Power amplifier applicaitons PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220Fa) and symbol ABSOLUTE MAXIMUM RATINGS AT Tc=25 SYMBOL PARAMETER CONDITI

 9.17. Size:32K  jmnic
 2sd1271a.pdf

Power Transistors www.jmnic.com 2SD1271A Silicon NPN Transistors B C E Features For Power Switching. With TO-220Fa package Complement to type 2SB946 Absolute Maximum Ratings Tc=25 SYMBOL PARAMETER RATING UNIT VCBO Collector to base voltage 150 V VCEO Collector to emitter voltage 100 V VEBO Emitter to base voltage 7 V ICP Peak collector current 15 A IC Coll

 9.18. Size:134K  jmnic
 2sd1276 2sd1276a.pdf

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD1276 2SD1276A DESCRIPTION With TO-220Fa package Complement to type 2SB950 and 2SB950A High forward current transfer ratio hFE High-speed switching APPLICATIONS For power amplification PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220Fa) and symbol ABSOLUT

 9.19. Size:469K  blue-rocket-elect
 2sd1273f.pdf

2SD1273(A)F(BR3DA1273(A)F) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220F NPN Silicon NPN transistor in a TO-220F Plastic Package. / Features h FE Power amplifier with high forward current transfer ratio applications. / Applications h FE High hFE, good linearity of hFE.

 9.20. Size:269K  hgsemi
 sd1275.pdf

HG RF POWER TRANSISTOR SD1275 Semiconductors HG ROHS Compliance,Silicon NPN POWER TRANSISTOR .160 MHz .13.6 VOLTS .COMMON EMITTER .P 40 W MIN. WITH 9.0 dB GAIN = OUT .380 4L STUD (M135) epoxy sealed ORDER CODE BRANDING SD1275 SD1275 PIN CONNECTION DESCRIPTION The SD1275 is a 13.6 V Class C epitaxial silicon NPN planar transistor designed primarily for VHF communications. The

 9.21. Size:361K  hgsemi
 sd1274.pdf

HG RF POWER TRANSISTOR SD1274 Semiconductors HG ROHS Compliance,Silicon NPN POWER TRANSISTOR .160 MHz .13.6 VOLTS .COMMON EMITTER .P 30 W MIN. WITH 10 dB GAIN = OUT .380 4L STUD (M135) epoxy sealed ORDER CODE BRANDING SD1274 SD1274 PIN CONNECTION DESCRIPTION The SD1274 is a 13.6 V Class C epitaxial silicon NPN planar transistor designed primarily for VHF communications. The S

 9.22. Size:189K  inchange semiconductor
 2sd1278.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1278 DESCRIPTION High Breakdown Voltage- V = 1200V (Min) CBO High Reliability 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage power switching TV horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(T =2

 9.23. Size:213K  inchange semiconductor
 2sd1276.pdf

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1276 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 60V (Min) (BR)CEO High Speed Switching Complement to Type 2SB950 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for medium speed power switching applications. ABS

 9.24. Size:126K  inchange semiconductor
 2sd1275 2sd1275a.pdf

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1275 2SD1275A DESCRIPTION With TO-220Fa package Complement to type 2SB949/949A High DC current gain High-speed switching APPLICATIONS For power amplification PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220Fa) and symbol 3 Emitter Absolute maximum ratings

 9.25. Size:208K  inchange semiconductor
 2sd1274.pdf

isc Silicon NPN Power Transistor 2SD1274 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 80V (Min) CEO(SUS) High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplification. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 150 V CBO V Colle

 9.26. Size:214K  inchange semiconductor
 2sd1271.pdf

isc Silicon NPN Power Transistor 2SD1271 DESCRIPTION Low Collector Saturation Voltage V = 0.5V(Max)@ I = 5A CE(sat) C Collector-Emitter Breakdown Voltage- V = 80V (Min) (BR)CEO Good Linearity of h FE Complement to Type 2SB946 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power switching applications. A

 9.27. Size:126K  inchange semiconductor
 2sd1277 2sd1277a.pdf

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1277 2SD1277A DESCRIPTION With TO-220Fa package Complement to type 2SB951/951A High DC current gain High-speed switching APPLICATIONS For medium speed power switching PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220Fa) and symbol 3 Emitter Absolute maximum

 9.28. Size:216K  inchange semiconductor
 2sd1277.pdf

isc Silicon NPN Darlington Power Transistor 2SD1277 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 60V (Min) (BR)CEO High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for medium speed power switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-B

 9.29. Size:191K  inchange semiconductor
 2sd1279.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1279 DESCRIPTION High Breakdown Voltage- V = 1400V (Min) CBO Low Collector-Emitter Saturation Voltage- V = 5.0V(Max.)@ I = 8.0A CE(sat) C Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage power

 9.30. Size:160K  inchange semiconductor
 2sd1271 2sd1271a.pdf

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1271 2SD1271A DESCRIPTION With TO-220Fa package Complement to type 2SB946/946A Low collector saturation voltage Good linearity of hFE Large collector current IC APPLICATIONS For power switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-

 9.31. Size:118K  inchange semiconductor
 2sd1274 2sd1274a 2sd1274b.pdf

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1274 2SD1274A 2SD1274B DESCRIPTION With TO-220Fa package High VCBO High speed switching APPLICATIONS Power amplifier applicaitons PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220Fa) and symbol 3 Emitter Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER

 9.32. Size:215K  inchange semiconductor
 2sd1270.pdf

isc Silicon NPN Power Transistor 2SD1270 DESCRIPTION Low Collector Saturation Voltage V = 0.5V(Max)@ I = 4A CE(sat) C Collector-Emitter Breakdown Voltage- V = 80V (Min) (BR)CEO Good Linearity of h FE Complement to Type 2SB945 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power switching applications. A

 9.33. Size:214K  inchange semiconductor
 2sd1271a.pdf

isc Silicon NPN Power Transistor 2SD1271A DESCRIPTION Low Collector Saturation Voltage V = 0.5V(Max)@ I = 5A CE(sat) C Collector-Emitter Breakdown Voltage- V = 100V (Min) (BR)CEO Good Linearity of h FE Complement to Type 2SB946A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplification. ABSOLUT

 9.34. Size:126K  inchange semiconductor
 2sd1276 2sd1276a.pdf

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1276 2SD1276A DESCRIPTION With TO-220Fa package Complement to type 2SB950/950A High DC current gain High-speed switching APPLICATIONS For power amplification PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220Fa) and symbol 3 Emitter Absolute maximum ratings