SD1272-2 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

HG RF POWER TRANSISTORSD1272-2SemiconductorsHGROHS Compliance,Silicon NPN POWER TRANSISTORNote : Above parameters , ratings , limits and conditions are subject to change.Sep. 1998www.HGSemi.comHG RF POWER TRANSISTORSD1272-2SemiconductorsHGROHS Compliance,Silicon NPN POWER TRANSISTORNote : Above parameters , ratings , limits and conditions are subject to change.Sep.

Power Transistors2SD1272Silicon NPN triple diffusion planar typeFor high-speed switching and high current amplification ratioUnit: mm10.0 0.2 4.2 0.25.5 0.2 2.7 0.2FeaturesHigh foward current transfer ratio hFE 3.1 0.1Satisfactory linearity of foward current transfer ratio hFEFull-pack package which can be installed to the heat sink withone screw1.3 0.2

HG RF POWER TRANSISTORSD1272SemiconductorsHGROHS Compliance,Silicon NPN POWER TRANSISTORNote : Above parameters , ratings , limits and conditions are subject to change.Sep. 1998www.HGSemi.comHG RF POWER TRANSISTORSD1272SemiconductorsHGROHS Compliance,Silicon NPN POWER TRANSISTORNote : Above parameters , ratings , limits and conditions are subject to change.Sep. 1998

SD1275-01RF POWER BIPOLAR TRANSISTORSVHF MOBILE APPLICATIONSFEATURES SUMMARY Figure 1. Package 160 MHz 13.6 VOLTS COMMON EMITTER POUT = 40 W MIN. WITH 9.0 dB GAINDESCRIPTIONThe SD1275-01 is a 13.6 V Class C epitaxial sili-con NPN planar transistor designed primarily forVHF communications. The SD1275-01 utilizes an.380 4L FL (M113)emitter ballasted die ge

SD1275RF POWER BIPOLAR TRANSISTORSVHF MOBILE APPLICATIONSFEATURES SUMMARY Figure 1. Package 160 MHz 13.6 VOLTS COMMON EMITTER POUT = 40 W MIN. WITH 9 dB GAINDESCRIPTIONThe SD1275 is a 13.6 V Class C epitaxial siliconNPN planar transistor designed primarily for VHFcommunications. The SD1275 utilizes an emitter.380 4L STUD (M135)ballasted die geometry to w

SD1274-01RF POWER BIPOLAR TRANSISTORSVHF MOBILE APPLICATIONSFEATURES SUMMARY Figure 1. Package 160 MHz 13.6 VOLTS COMMON EMITTER POUT = 30 W MIN. WITH 10 dB GAINDESCRIPTIONThe SD1274-01 is a 13.6 V Class C epitaxial sili-con NPN planar transistor designed primarily forVHF communications. The SD1274-01 utilizes an.380 4L FL (M113)emitter ballasted die geo

SD1274RF POWER BIPOLAR TRANSISTORSVHF MOBILE APPLICATIONSFEATURES SUMMARY Figure 1. Package 160 MHz 13.6 VOLTS COMMON EMITTER POUT = 30 W MIN. WITH 10 dB GAINDESCRIPTIONThe SD1274 is a 13.6 V Class C epitaxial siliconNPN planar transistor designed primarily for VHFcommunications. The SD1274 utilizes an emitter.380 4L STUD (M135)ballasted die geometry to

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KSD1273High hFE, AF Power Amplifier Full PAK Package for Simplified Mounting Only by a Screw, Requires no Insulator.TO-220F11.Base 2.Collector 3.EmitterNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage

Power Transistors2SD1273, 2SD1273ASilicon NPN triple diffusion planar typeFor power amplification with high forward current transfer ratioUnit: mmComplementary to 2SB129910.0 0.2 4.2 0.25.5 0.2 2.7 0.2FeaturesHigh foward current transfer ratio hFE 3.1 0.1Satisfactory linearity of foward current transfer ratio hFEFull-pack package which can be installed to the

Power Transistors2SD1276, 2SD1276ASilicon NPN triple diffusion planar type DarlingtonUnit: mmFor power amplification10.0 0.2 4.2 0.25.5 0.2 2.7 0.2Complementary to 2SB950 and 2SB950AFeaturesHigh foward current transfer ratio hFE 3.1 0.1High-speed switchingFull-pack package which can be installed to the heat sink withone screw1.3 0.21.4 0.1Absolute

Power Transistors2SD1274, 2SD1274A, 2SD1274BSilicon NPN triple diffusion planar typeFor power amplificationUnit: mmFeatures 10.0 0.2 4.2 0.25.5 0.2 2.7 0.2 High collector to base voltage VCBO High-speed switching Full-pack package which can be installed to the heat sink with 3.1 0.1one screwAbsolute Maximum Ratings (TC=25C)1.3 0.2Parameter Symbol Ra

Power Transistors2SD1271, 2SD1271ASilicon NPN epitaxial planar typeFor power switchingComplementary to 2SB946 and 2SB946A Unit: mm10.0 0.2 4.2 0.2Features5.5 0.2 2.7 0.2Low collector to emitter saturation voltage VCE(sat)Satisfactory linearity of foward current transfer ratio hFE 3.1 0.1Large collector current ICFull-pack package which can be installed to the

Power Transistors2SD1277, 2SD1277ASilicon NPN triple diffusion planar type DarlingtonFor midium speed power switchingUnit: mm10.0 0.2 4.2 0.2Complementary to 2SB951 and 2SB951A5.5 0.2 2.7 0.2Features High foward current transfer ratio hFE 3.1 0.1 High-speed switching Full-pack package which can be installed to the heat sink withone screw1.3 0.21.4 0

Power Transistors2SD1270Silicon NPN epitaxial planar typeFor power switchingUnit: mmComplementary to 2SB94510.0 0.2 4.2 0.25.5 0.2 2.7 0.2FeaturesLow collector to emitter saturation voltage VCE(sat) 3.1 0.1Satisfactory linearity of foward current transfer ratio hFELarge collector current ICFull-pack package which can be installed to the heat sink withone

Power Transistors2SD1275, 2SD1275ASilicon NPN triple diffusion planar type DarlingtonUnit: mmFor power amplification10.0 0.2 4.2 0.2Complementary to 2SB949 and 2SB949A 5.5 0.2 2.7 0.2Features 3.1 0.1High foward current transfer ratio hFEHigh-speed switchingFull-pack package which can be installed to the heat sink withone screw1.3 0.21.4 0.1Absolute

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD1275 2SD1275A DESCRIPTION With TO-220Fa package Complement to type 2SB949,2SB949A High forward current transfer ratio hFE High-speed switching APPLICATIONS For power amplification PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterFig.1 simplified outline (TO-220Fa) and symbol ABSOLUTE MA

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD1277 2SD1277A DESCRIPTION With TO-220Fa package Complement to type 2SB951 and 2SB951A High forward current transfer ratio hFE High-speed switching APPLICATIONS For medium speed power switching PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterFig.1 simplified outline (TO-220Fa) and symbol

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD1274 2SD1274A 2SD1274B DESCRIPTION With TO-220Fa package High VCBO High speed switching APPLICATIONS Power amplifier applicaitons PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterFig.1 simplified outline (TO-220Fa) and symbol ABSOLUTE MAXIMUM RATINGS AT Tc=25 SYMBOL PARAMETER CONDITI

Power Transistors www.jmnic.com 2SD1271A Silicon NPN Transistors B C E Features For Power Switching. With TO-220Fa package Complement to type 2SB946 Absolute Maximum Ratings Tc=25 SYMBOL PARAMETER RATING UNITVCBO Collector to base voltage 150 V VCEO Collector to emitter voltage 100 V VEBO Emitter to base voltage 7 V ICP Peak collector current 15 A IC Coll

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD1276 2SD1276A DESCRIPTION With TO-220Fa package Complement to type 2SB950 and 2SB950A High forward current transfer ratio hFE High-speed switching APPLICATIONS For power amplification PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterFig.1 simplified outline (TO-220Fa) and symbol ABSOLUT

2SD1273(A)F(BR3DA1273(A)F) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220F NPN Silicon NPN transistor in a TO-220F Plastic Package. / Features h FEPower amplifier with high forward current transfer ratio applications. / Applications h FEHigh hFE, good linearity of hFE.

HG RF POWER TRANSISTORSD1275SemiconductorsHGROHS Compliance,Silicon NPN POWER TRANSISTOR.160 MHz.13.6 VOLTS.COMMON EMITTER.P 40 W MIN. WITH 9.0 dB GAIN=OUT.380 4L STUD (M135)epoxy sealedORDER CODE BRANDINGSD1275 SD1275PIN CONNECTIONDESCRIPTIONThe SD1275 is a 13.6 V Class C epitaxial siliconNPN planar transistor designed primarily for VHFcommunications. The

HG RF POWER TRANSISTORSD1274SemiconductorsHGROHS Compliance,Silicon NPN POWER TRANSISTOR.160 MHz.13.6 VOLTS.COMMON EMITTER.P 30 W MIN. WITH 10 dB GAIN=OUT.380 4L STUD (M135)epoxy sealedORDER CODE BRANDINGSD1274 SD1274PIN CONNECTIONDESCRIPTIONThe SD1274 is a 13.6 V Class C epitaxial siliconNPN planar transistor designed primarily for VHFcommunications. The S

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD1278DESCRIPTIONHigh Breakdown Voltage-: V = 1200V (Min)CBOHigh Reliability100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage power switching TV horizontaldeflection output applications.ABSOLUTE MAXIMUM RATINGS(T =2

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD1276DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 60V (Min)(BR)CEOHigh Speed SwitchingComplement to Type 2SB950100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for medium speed power switching applications.ABS

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1275 2SD1275A DESCRIPTION With TO-220Fa package Complement to type 2SB949/949A High DC current gain High-speed switching APPLICATIONS For power amplification PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-220Fa) and symbol3 EmitterAbsolute maximum ratings

isc Silicon NPN Power Transistor 2SD1274DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 80V (Min)CEO(SUS)High Speed SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplification.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 150 VCBOV Colle

isc Silicon NPN Power Transistor 2SD1271DESCRIPTIONLow Collector Saturation Voltage: V = 0.5V(Max)@ I = 5ACE(sat) CCollector-Emitter Breakdown Voltage-: V = 80V (Min)(BR)CEOGood Linearity of hFEComplement to Type 2SB946Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power switching applications.A

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1277 2SD1277A DESCRIPTION With TO-220Fa package Complement to type 2SB951/951A High DC current gain High-speed switching APPLICATIONS For medium speed power switching PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-220Fa) and symbol3 EmitterAbsolute maximum

isc Silicon NPN Darlington Power Transistor 2SD1277DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 60V (Min)(BR)CEOHigh Speed SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for medium speed power switching applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-B

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD1279DESCRIPTIONHigh Breakdown Voltage-: V = 1400V (Min)CBOLow Collector-Emitter Saturation Voltage-: V = 5.0V(Max.)@ I = 8.0ACE(sat) CFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage power

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1271 2SD1271A DESCRIPTION With TO-220Fa package Complement to type 2SB946/946A Low collector saturation voltage Good linearity of hFE Large collector current IC APPLICATIONS For power switching applications PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1274 2SD1274A 2SD1274B DESCRIPTION With TO-220Fa package High VCBO High speed switching APPLICATIONS Power amplifier applicaitons PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-220Fa) and symbol3 EmitterAbsolute maximum ratings (Ta=25) SYMBOL PARAMETER

isc Silicon NPN Power Transistor 2SD1270DESCRIPTIONLow Collector Saturation Voltage: V = 0.5V(Max)@ I = 4ACE(sat) CCollector-Emitter Breakdown Voltage-: V = 80V (Min)(BR)CEOGood Linearity of hFEComplement to Type 2SB945Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power switching applications.A

isc Silicon NPN Power Transistor 2SD1271ADESCRIPTIONLow Collector Saturation Voltage: V = 0.5V(Max)@ I = 5ACE(sat) CCollector-Emitter Breakdown Voltage-: V = 100V (Min)(BR)CEOGood Linearity of hFEComplement to Type 2SB946AMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplification.ABSOLUT

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1276 2SD1276A DESCRIPTION With TO-220Fa package Complement to type 2SB950/950A High DC current gain High-speed switching APPLICATIONS For power amplification PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-220Fa) and symbol3 EmitterAbsolute maximum ratings