SD1274-01 Todos los transistores

 ..1. Size:80K  st
 sd1274-01.pdf

SD1274-01 RF POWER BIPOLAR TRANSISTORS VHF MOBILE APPLICATIONS FEATURES SUMMARY Figure 1. Package 160 MHz 13.6 VOLTS COMMON EMITTER POUT = 30 W MIN. WITH 10 dB GAIN DESCRIPTION The SD1274-01 is a 13.6 V Class C epitaxial sili- con NPN planar transistor designed primarily for VHF communications. The SD1274-01 utilizes an .380 4L FL (M113) emitter ballasted die geo

 8.1. Size:760K  st
 sd1274.pdf

SD1274 RF POWER BIPOLAR TRANSISTORS VHF MOBILE APPLICATIONS FEATURES SUMMARY Figure 1. Package 160 MHz 13.6 VOLTS COMMON EMITTER POUT = 30 W MIN. WITH 10 dB GAIN DESCRIPTION The SD1274 is a 13.6 V Class C epitaxial silicon NPN planar transistor designed primarily for VHF communications. The SD1274 utilizes an emitter .380 4L STUD (M135) ballasted die geometry to

 8.2. Size:56K  panasonic
 2sd1274.pdf

Power Transistors 2SD1274, 2SD1274A, 2SD1274B Silicon NPN triple diffusion planar type For power amplification Unit mm Features 10.0 0.2 4.2 0.2 5.5 0.2 2.7 0.2 High collector to base voltage VCBO High-speed switching Full-pack package which can be installed to the heat sink with 3.1 0.1 one screw Absolute Maximum Ratings (TC=25 C) 1.3 0.2 Parameter Symbol Ra

 8.3. Size:107K  jmnic
 2sd1274 2sd1274a 2sd1274b.pdf

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD1274 2SD1274A 2SD1274B DESCRIPTION With TO-220Fa package High VCBO High speed switching APPLICATIONS Power amplifier applicaitons PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220Fa) and symbol ABSOLUTE MAXIMUM RATINGS AT Tc=25 SYMBOL PARAMETER CONDITI

 8.4. Size:361K  hgsemi
 sd1274.pdf

HG RF POWER TRANSISTOR SD1274 Semiconductors HG ROHS Compliance,Silicon NPN POWER TRANSISTOR .160 MHz .13.6 VOLTS .COMMON EMITTER .P 30 W MIN. WITH 10 dB GAIN = OUT .380 4L STUD (M135) epoxy sealed ORDER CODE BRANDING SD1274 SD1274 PIN CONNECTION DESCRIPTION The SD1274 is a 13.6 V Class C epitaxial silicon NPN planar transistor designed primarily for VHF communications. The S

 8.5. Size:208K  inchange semiconductor
 2sd1274.pdf

isc Silicon NPN Power Transistor 2SD1274 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 80V (Min) CEO(SUS) High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplification. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 150 V CBO V Colle

 8.6. Size:118K  inchange semiconductor
 2sd1274 2sd1274a 2sd1274b.pdf

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1274 2SD1274A 2SD1274B DESCRIPTION With TO-220Fa package High VCBO High speed switching APPLICATIONS Power amplifier applicaitons PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220Fa) and symbol 3 Emitter Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER