SD1429 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

HG RF POWER TRANSISTORSD1429SemiconductorsHGROHS Compliance,Silicon NPN POWER TRANSISTORD E S C R I P T I O N K E Y F E A T U R E S D E S C R I P T I O N K E Y F E A T U R E SD E S C R I P T I O N K E Y F E A T U R E SD E S C R I P T I O N K E Y F E A T U R E SThe SD1429 is a 12.5 V Class C epitaxial silicon NPN planar 470 MHz transistor designed primarily for UHF communic

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INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD1429DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedLow Saturation Voltage100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSColor TV horizontal deflection output applicationsABSOLUTE MAXIMUM RATINGS(T =25)a

SD1420RF & MICROWAVE TRANSISTORS800-900 MHz BASE STATION APPLICATIONS.860 - 960 MHz.24 VOLTS.COMMON EMITTER.GOLD METALLIZATION.CLASS A LINEAR OPERATION.P 2.1 W MIN. WITH 9.0 dB GAIN=OUT.280 4L STUD (M122)epoxy sealedORDER CODE BRANDINGSD1420 SD1420PIN CONNECTIONDESCRIPTIONThe SD1420 is a gold metallized epitaxial siliconNPN planar transistor designed for high

SD1424RF & MICROWAVE TRANSISTORS800-900 MHz BASE STATION APPLICATIONS.800 - 900 MHz.24 VOLTS.COMMON EMITTER.GOLD METALLIZATION.INTERNAL INPUT MATCHING.CLASS AB LINEAR OPERATION.P 30 W MIN. WITH 7.5 dB GAINOUT =.250 x .320 4LFL (M156)epoxy sealedORDER CODE BRANDINGSD1424 SD1424PIN CONNECTIONDESCRIPTIONThe SD1424 is a gold metallized epitaxial siliconNPN planar

SD1423RF & MICROWAVE TRANSISTORS800-960MHz BASE STATION APPLICATIONS.800 - 960 MHz.24 VOLTS.EFFICIENCY 50%.COMMON EMITTER.GOLD METALLIZATION.CLASS AB LINEAR OPERATION.P 15 W MIN. WITH 8.0 dB GAINOUT =.230 6LFL (M118)epoxy sealedORDE R CODEBRANDINGSD1423SD1423DESCRIPTIONPIN CONNECTIONThe SD1423 is a gold metallization epitaxial siliconNPN planar transistor

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Transistor2SD1424Silicon NPN epitaxial planer typeFor low-frequency amplificationUnit: mm4.0 0.2FeaturesOptimum for high-density mounting.Allowing supply with the radial taping.High foward current transfer ratio hFE.markingAbsolute Maximum Ratings (Ta=25C)1 2 3Parameter Symbol Ratings UnitCollector to base voltage VCBO 50 V1.27 1.27Collector to emitter voltag

Transistor2SD1423, 2SD1423ASilicon NPN epitaxial planer typeFor low-frequency amplificationUnit: mmComplementary to 2SB1030 and 2SB1030A4.0 0.2FeaturesOptimum for high-density mounting.Allowing supply with the radial taping.Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings UnitmarkingCollector to 2SD1423 30VCBO V 1 2 3base voltage 2SD1423A 60Collector

Transistor2SD1424Silicon NPN epitaxial planer typeFor low-frequency amplificationUnit: mm4.0 0.2FeaturesOptimum for high-density mounting.Allowing supply with the radial taping.High foward current transfer ratio hFE.markingAbsolute Maximum Ratings (Ta=25C)1 2 3Parameter Symbol Ratings UnitCollector to base voltage VCBO 50 V1.27 1.27Collector to emitter voltag

Transistor2SD1423, 2SD1423ASilicon NPN epitaxial planer typeFor low-frequency amplificationUnit: mmComplementary to 2SB1030 and 2SB1030A4.0 0.2FeaturesOptimum for high-density mounting.Allowing supply with the radial taping.Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings UnitmarkingCollector to 2SD1423 30VCBO V 1 2 3base voltage 2SD1423A 60Collector

2SD1420Silicon NPN EpitaxialApplicationLow frequency power amplifierOutlineUPAK12341. Base2. Collector3. Emitter4. Collector (Flange)2SD1420Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 180 VCollector to emitter voltage VCEO 120 VEmitter to base voltage VEBO 5VCollector current IC 1.5 ACollector peak curren

2SD1421Silicon NPN EpitaxialApplicationLow frequency power amplifierOutlineUPAK12341. Base2. Collector3. Emitter4. Collector (Flange)2SD1421Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 180 VCollector to emitter voltage VCEO 160 VEmitter to base voltage VEBO 5VCollector current IC 1.5 ACollector peak curren

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Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN HIGH VOLTAGE SILICON POWER TRANSISTORS CSD1426FTO-3P Fully IsolatedPlastic PackageBCEColour TV Horizontal Output Applications.ABSOLUTE MAXIMUM RATINGS (Ta=25C unless specified otherwise)DESCRIPTION SYMBOL VALUE UNITCollector Base Voltage VCBO 1500 VCollector Emitter Voltage VCE

SMD Type TransistorsNPN Transistors2SD1420SOT-89Unit:mm1.70 0.1 Features Collector Current Capability IC=1.5A Collector Emitter Voltage VCEO=120V0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 180 Collector - Emitter Voltage VCEO 120 V Emitter - Base Voltage

SMD Type TransistorsNPN Transistors2SD1421SOT-89Unit:mm1.70 0.1 Features Collector Current Capability IC=1.5A Collector Emitter Voltage VCEO=160V Low frequency power amplifier0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 180 Collector - Emitter Voltage

HG RF POWER TRANSISTORSD1420SemiconductorsHGROHS Compliance,Silicon NPN POWER TRANSISTOR.860 - 960 MHz.24 VOLTS.COMMON EMITTER.GOLD METALLIZATION.CLASS A LINEAR OPERATION.P 2.1 W MIN. WITH 9.0 dB GAIN=OUT.280 4L STUD (M122)epoxy sealedORDER CODE BRANDINGSD1420 SD1420PIN CONNECTIONDESCRIPTIONThe SD1420 is a gold metallized epitaxial siliconNPN planar trans

HG RF POWER TRANSISTORSD1422SemiconductorsHGROHS Compliance,Silicon NPN POWER TRANSISTORNote : Above parameters , ratings , limits and conditions are subject to change.Sep. 1998www.HGSemi.comHG RF POWER TRANSISTORSD1422SemiconductorsHGROHS Compliance,Silicon NPN POWER TRANSISTORNote : Above parameters , ratings , limits and conditions are subject to change.Sep. 1998

isc Silicon NPN Power Transistor 2SD1427DESCRIPTIONHigh Breakdown VoltageHigh Switching SpeedBuilt-in damper diodeLow Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in large screen color deflection circuits.ABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE UNITV Collec

isc Silicon NPN Power Transistor 2SD1426DESCRIPTIONHigh Breakdown VoltageHigh Switching SpeedBuilt-in damper diodeLow Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection circuits ofcolour TV receivers.ABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALU

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD1428DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedLow Saturation VoltageBuilt-in Damper Diode100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSColor TV horizontal deflection output applicationsABSOLUTE MAX

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD1425DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedLow Saturation VoltageBuilt-in Damper Diode100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSColor TV horizontal deflection output applicationsABSOLUTE MAX