SD1462 Todos los transistores

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 sd1462.pdf

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 2sd1834 2sd1468s 2sd1865.pdf

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 2sd1469 2sd1920.pdf

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 sd1463.pdf

SD1463 (TCC0204-125) RF & MICROWAVE TRANSISTORS VHF/UHF APPLICATIONS .400 MHz .28 VOLTS .EFFICIENCY 60% .COMMON EMITTER .GOLD METALLIZATION .POUT 125 W MIN. WITH 7.0 dB GAIN = .400 x .425 8LFL (M168) epoxy sealed ORDER CODE BRANDING SD1463 0204-125 PIN CONNECTION DESCRIPTION The SD1463 is a 28 V Class C gold metallized epitaxial silicon NPN planar transistor designed for UHF

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 sd1460.pdf

SD1460 RF & MICROWAVE TRANSISTORS FM BROADCAST APPLICATIONS .108 MHz .28 VOLTS .EFFICIENCY 75% .COMMON EMITTER .GOLD METALLIZATION .P 150 W MIN. WITH 9.2 dB GAIN = OUT .500 4LFL (M174) epoxy sealed ORDER CODE BRANDING SD1460 SD1460 PIN CONNECTION DESCRIPTION The SD1143 is a 28 V gold metallized epitaxial silicon NPN planar transistor designed for VHF FM broadcast transmitters

 9.5. Size:47K  rohm
 2sd1468.pdf

2SD1834 Transistors Transistors 2SD1468S / 2SD1865 (94S-340-D64) (94L-767-D65) 311 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for re

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 2sd1468s.pdf

2SD1468S 1A , 30V NPN Plastic-Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES TO-92S Low Saturation Voltage Ideal for Voltage, High Current Drives. High DC Current Gain and High Current Millimeter REF. Min. Max. A 3.90 4.10 B 3.05 3.25 CLASSIFICATION OF hFE C 1.42 1.62 D 1

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 2sd1468.pdf

2SD1468 1A , 30V NPN Plastic-Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURES Low Saturation Voltage Ideal for Low Voltage, High Current Dribes High DC Current Gain and High Current Millimeter REF. Min. Max. A 4.40 4.70 B 4.30 4.70 C 12.70 - CLASSIFICATION OF hFE D 3.

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 2sd1468s.pdf

2SD1468S TO-92S Transistor (NPN) 1. EMITTER TO-92S 2. COLLECTOR 1 2 3 3. BASE Features Low saturation voltage, typically Vce(sat)=0.006V Ideal for voltage, high current drives, High DC current gain and high current MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 15 V

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 2sd1468.pdf

2SD1468(NPN) TO-92 Bipolar Transistors TO-92 1. EMITTER 2. COLLECTOR 3. BASE Features Low saturation voltage Ideal for low voltage, high current dribes High DC current gain and high current MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO 30 V Collector-Base Voltage Dimensions in inches and (millimeters) VCEO 15 V Collector-E

 9.10. Size:368K  hgsemi
 sd1460.pdf

HG RF POWER TRANSISTOR SD1460 Semiconductors HG ROHS Compliance,Silicon NPN POWER TRANSISTOR SD1460 RF & MICROWAVE TRANSISTORS FM BROADCAST APPLICATIONS .108 MHz .28 VOLTS .EFFICIENCY 75% .COMMON EMITTER .GOLD METALLIZATION .POUT 150 W MIN. WITH 9.2 dB GAIN = .500 4LFL (M174) epoxy sealed ORDER CODE BRANDING SD1460 SD1460 PIN CONNECTION DESCRIPTION The SD1143 is a 28 V gold

 9.11. Size:206K  inchange semiconductor
 2sd1466.pdf

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1466 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 450V(Min) (BR)CEO Low Collector-Emitter Saturation Voltage- V = 1.5V(Max) @I = 8A CE(sat) C High DC Current Gain h = 200(Min) @ I = 15A, V = 3V FE C CE 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance