SD1726 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

SD1726 (THA15)RF & MICROWAVE TRANSISTORSHF SSB APPLICATIONSFEATURES OPTIMIZED FOR SSB 30 MHz 50 V IMD-30 dB COMMON EMITTER GOLD METALLIZATIONM174 POUT = 150 W PEP MIN. WITH 14 dB GAIN epoxy sealedORDER CODE BRANDINGSD1726 THA15DESCRIPTIONPIN CONNECTIONThe SD1726 is a 50 V epitaxial silicon NPN4 1planar transistor designed primarily for

SD1726 (THA15)RF & MICROWAVE TRANSISTORSHF SSB APPLICATIONSFEATURES OPTIMIZED FOR SSB 30 MHz 50 V IMD-30 dB COMMON EMITTER GOLD METALLIZATIONM174 POUT = 150 W PEP MIN. WITH 14 dB GAIN epoxy sealedORDER CODE BRANDINGSD1726 THA15DESCRIPTIONPIN CONNECTIONThe SD1726 is a 50 V epitaxial silicon NPN4 1planar transistor designed primarily for

SD1729 (TH416)RF & MICROWAVE TRANSISTORSHF SSB APPLICATIONS.OPTIMIZED FOR SSB.30 MHz.28 VOLTS.IMD -30 dB.COMMON EMITTER.GOLD METALLIZATION.P 130 W PEP WITH 12 dB GAINOUT =.500 4LFL (M174)epoxy sealedORDER CODE BRANDINGSD1729 TH416PIN CONNECTIONDESCRIPTIONThe SD1729 is a Class AB 28 V epitaxial siliconNPN planar transistor designed primarily for SSBcommunica

SD1728 (TH430)RF & Microwave transistorsHF SSB applicationFeatures 13.56MHz 44V Gold metallization Common emitter POUT = 200W with 15dB gainDescriptionThe SD1728 is a 50V epitaxial silicon NPN planar M177Epoxy sealedtransistor designed primarily for SSB and Industrial HF pplications. This device utilizes emitter ballasting for improved ruggedness and

SD1728 (TH430)RF & Microwave transistorsHF SSB applicationFeatures 13.56MHz 44V Gold metallization Common emitter POUT = 200W with 15dB gainDescriptionThe SD1728 is a 50V epitaxial silicon NPN planar M177Epoxy sealedtransistor designed primarily for SSB and Industrial HF pplications. This device utilizes emitter ballasting for improved ruggedness and

SD1727 (THX15)RF POWER BIPOLAR TRANSISTORSHF SSB APPLICATIONSFEATURES SUMMARY Figure 1. Package OPTIMIZED FOR SSB 30 MHz 50 VOLTS IMD 30 dB COMMON EMITTER GOLD METALLIZATION POUT = 150 W PEP MIN. WITH 14 dB GAIN .500 4L FL (M164)DESCRIPTIONepoxy sealedThe SD1727 is a 50 V epitaxial silicon NPN planartransistor designed primarily for SSB c

Ordering number:2047APNP/NPN Epitaxial Planar Silicon Transistors2SB1167/2SD1724100V/3A Switching ApplicationsFeatures Package Dimensions Relay drivers, high-speed inverters, converters. unit:mm2043AFeatures [2SB1167/2SD1724] Low collector-to-emitter saturation voltage. High fT. Excellent linearity of hFE. Fast switching time.B : BaseC : CollectorE : E

Ordering number:ENN2048BPNP/NPN Epitaxial Planar Silicon Transistors2SB1168/2SD1725Large Current Switching ApplicationsFeatures Package Dimensions Relay drivers, high-speed inverters, converters. unit:mm2043BFeatures [2SB1168/2SD1725]8.02.0 Low collector-to-emitter saturation voltage. 2.74.0 High fT. Excellent linearity of hFE. Short switching time.1

Ordering number:2046APNP/NPN Epitaxial Planar Silicon Transistors2SB1165/2SD172250V/5A Switching ApplicationsApplications Package Dimensions Relay drivers, high-speed inverters, converters. unit:mm2043AFeatures [2SB1165/2SD1722] Low collector-to-emitter saturation voltage. High fT. Excellent linearity of hFE. Fast switching time.B : BaseC : CollectorE

Ordering number:2021APNP/NPN Epitaxial Planar Silicon Transistors2SB1166/2SD172350V/8A Switching ApplicationsApplications Package Dimensions Relay drivers, high-speed inverters, converters. unit:mm2043AFeatures [2SB1166/2SD1723] Low collector-to-emitter saturation voltage. High fT. Excellent linearity of hFE. Fast switchint time.B : BaseC : CollectorE

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HG RF POWER TRANSISTORSD1729SemiconductorsHGROHS Compliance,Silicon NPN POWER TRANSISTORSD1729 (TH416)RF & MICROWAVE TRANSISTORSHF SSB APPLICATIONS.OPTIMIZED FOR SSB.30 MHz.28 VOLTS.IMD -30 dB.COMMON EMITTER.GOLD METALLIZATION.P 130 W PEP WITH 12 dB GAINOUT =.500 4LFL (M174)epoxy sealedORDER CODE BRANDINGSD1729 TH416PIN CONNECTIONDESCRIPTIONThe SD1729

isc Silicon NPN Power Transistor 2SD1720DESCRIPTIONHigh Collector Current:: I = 5ACLow Collector Saturation Voltage: V = 1.0V(Max.)@I = 3ACE(sat) CWide Area of Safe OperationComplement to Type 2SB1291Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE M

isc Silicon NPN Power Transistor 2SD1728DESCRIPTIONHigh VoltageHigh Switching SpeedBuilt-in damper diodeWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base

isc Silicon NPN Power Transistor 2SD1727DESCRIPTIONHigh VoltageHigh Switching SpeedBuilt-in damper diodeWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base

isc Silicon NPN Power Transistor 2SD1729DESCRIPTIONHigh VoltageHigh Switching SpeedBuilt-in damper diodeWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base