SD1726 Todos los transistores

 ..1. Size:139K  st
 sd1726.pdf

SD1726 (THA15) RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS FEATURES OPTIMIZED FOR SSB 30 MHz 50 V IMD-30 dB COMMON EMITTER GOLD METALLIZATION M174 POUT = 150 W PEP MIN. WITH 14 dB GAIN epoxy sealed ORDER CODE BRANDING SD1726 THA15 DESCRIPTION PIN CONNECTION The SD1726 is a 50 V epitaxial silicon NPN 4 1 planar transistor designed primarily for

 ..2. Size:191K  st
 sd1726 tha15.pdf

SD1726 (THA15) RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS FEATURES OPTIMIZED FOR SSB 30 MHz 50 V IMD-30 dB COMMON EMITTER GOLD METALLIZATION M174 POUT = 150 W PEP MIN. WITH 14 dB GAIN epoxy sealed ORDER CODE BRANDING SD1726 THA15 DESCRIPTION PIN CONNECTION The SD1726 is a 50 V epitaxial silicon NPN 4 1 planar transistor designed primarily for

 0.1. Size:127K  fuji
 2sd1726.pdf

 9.1. Size:49K  st
 sd1729.pdf

SD1729 (TH416) RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS .OPTIMIZED FOR SSB .30 MHz .28 VOLTS .IMD -30 dB .COMMON EMITTER .GOLD METALLIZATION .P 130 W PEP WITH 12 dB GAIN OUT = .500 4LFL (M174) epoxy sealed ORDER CODE BRANDING SD1729 TH416 PIN CONNECTION DESCRIPTION The SD1729 is a Class AB 28 V epitaxial silicon NPN planar transistor designed primarily for SSB communica

 9.2. Size:149K  st
 sd1728 th430.pdf

SD1728 (TH430) RF & Microwave transistors HF SSB application Features 13.56MHz 44V Gold metallization Common emitter POUT = 200W with 15dB gain Description The SD1728 is a 50V epitaxial silicon NPN planar M177 Epoxy sealed transistor designed primarily for SSB and Industrial HF pplications. This device utilizes emitter ballasting for improved ruggedness and

 9.3. Size:144K  st
 sd1728.pdf

SD1728 (TH430) RF & Microwave transistors HF SSB application Features 13.56MHz 44V Gold metallization Common emitter POUT = 200W with 15dB gain Description The SD1728 is a 50V epitaxial silicon NPN planar M177 Epoxy sealed transistor designed primarily for SSB and Industrial HF pplications. This device utilizes emitter ballasting for improved ruggedness and

 9.4. Size:402K  st
 sd1727.pdf

SD1727 (THX15) RF POWER BIPOLAR TRANSISTORS HF SSB APPLICATIONS FEATURES SUMMARY Figure 1. Package OPTIMIZED FOR SSB 30 MHz 50 VOLTS IMD 30 dB COMMON EMITTER GOLD METALLIZATION POUT = 150 W PEP MIN. WITH 14 dB GAIN .500 4L FL (M164) DESCRIPTION epoxy sealed The SD1727 is a 50 V epitaxial silicon NPN planar transistor designed primarily for SSB c

 9.5. Size:144K  sanyo
 2sd1724.pdf

Ordering number 2047A PNP/NPN Epitaxial Planar Silicon Transistors 2SB1167/2SD1724 100V/3A Switching Applications Features Package Dimensions Relay drivers, high-speed inverters, converters. unit mm 2043A Features [2SB1167/2SD1724] Low collector-to-emitter saturation voltage. High fT. Excellent linearity of hFE. Fast switching time. B Base C Collector E E

 9.6. Size:53K  sanyo
 2sd1725.pdf

Ordering number ENN2048B PNP/NPN Epitaxial Planar Silicon Transistors 2SB1168/2SD1725 Large Current Switching Applications Features Package Dimensions Relay drivers, high-speed inverters, converters. unit mm 2043B Features [2SB1168/2SD1725] 8.0 2.0 Low collector-to-emitter saturation voltage. 2.7 4.0 High fT. Excellent linearity of hFE. Short switching time. 1

 9.7. Size:144K  sanyo
 2sd1722.pdf

Ordering number 2046A PNP/NPN Epitaxial Planar Silicon Transistors 2SB1165/2SD1722 50V/5A Switching Applications Applications Package Dimensions Relay drivers, high-speed inverters, converters. unit mm 2043A Features [2SB1165/2SD1722] Low collector-to-emitter saturation voltage. High fT. Excellent linearity of hFE. Fast switching time. B Base C Collector E

 9.8. Size:146K  sanyo
 2sd1723.pdf

Ordering number 2021A PNP/NPN Epitaxial Planar Silicon Transistors 2SB1166/2SD1723 50V/8A Switching Applications Applications Package Dimensions Relay drivers, high-speed inverters, converters. unit mm 2043A Features [2SB1166/2SD1723] Low collector-to-emitter saturation voltage. High fT. Excellent linearity of hFE. Fast switchint time. B Base C Collector E

 9.9. Size:104K  panasonic
 2sd1729.pdf

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 9.10. Size:361K  hgsemi
 sd1729.pdf

HG RF POWER TRANSISTOR SD1729 Semiconductors HG ROHS Compliance,Silicon NPN POWER TRANSISTOR SD1729 (TH416) RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS .OPTIMIZED FOR SSB .30 MHz .28 VOLTS .IMD -30 dB .COMMON EMITTER .GOLD METALLIZATION .P 130 W PEP WITH 12 dB GAIN OUT = .500 4LFL (M174) epoxy sealed ORDER CODE BRANDING SD1729 TH416 PIN CONNECTION DESCRIPTION The SD1729

 9.11. Size:213K  inchange semiconductor
 2sd1720.pdf

isc Silicon NPN Power Transistor 2SD1720 DESCRIPTION High Collector Current I = 5A C Low Collector Saturation Voltage V = 1.0V(Max.)@I = 3A CE(sat) C Wide Area of Safe Operation Complement to Type 2SB1291 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. ABSOLUTE M

 9.12. Size:215K  inchange semiconductor
 2sd1728.pdf

isc Silicon NPN Power Transistor 2SD1728 DESCRIPTION High Voltage High Switching Speed Built-in damper diode Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS (T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base

 9.13. Size:215K  inchange semiconductor
 2sd1727.pdf

isc Silicon NPN Power Transistor 2SD1727 DESCRIPTION High Voltage High Switching Speed Built-in damper diode Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS (T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base

 9.14. Size:215K  inchange semiconductor
 2sd1729.pdf

isc Silicon NPN Power Transistor 2SD1729 DESCRIPTION High Voltage High Switching Speed Built-in damper diode Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS (T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base