MPS8550SC . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MPS8550SC
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.35 W
Tensión colector-base (Vcb): 40 V
Tensión colector-emisor (Vce): 25 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 1.2 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 150 MHz
Ganancia de corriente contínua (hfe): 200
Paquete / Cubierta: SOT23
Búsqueda de reemplazo de transistor bipolar MPS8550SC
MPS8550SC Datasheet (PDF)
mps8550sc.pdf
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SEMICONDUCTOR MPS8550SCTECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORHIGH CURRENT APPLICATION. FEATUREComplementary to MPS8050SC.MAXIMUM RATING (Ta=25)CHARACTERISTIC SYMBOL RATING UNITVCBO -40 VCollector-Base VoltageVCEO -25 VCollector-Emitter VoltageVEBOEmitter-Base Voltage -5 VICCollector Current -1,200 mAPC *Collector Power Dissipation 350 mWTjJunctio
mps8550s.pdf
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SEMICONDUCTOR MPS8550STECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORHIGH CURRENT APPLICATION. EFEATUREL B LComplementary to MPS8050S. DIM MILLIMETERS_+A 2.93 0.20B 1.30+0.20/-0.15C 1.30 MAX23 D 0.40+0.15/-0.05E 2.40+0.30/-0.201G 1.90MAXIMUM RATING (Ta=25)H 0.95J 0.13+0.10/-0.05CHARACTERISTIC SYMBOL RATING UNITK 0.00 ~ 0.10QL 0.55P PM 0.20 M
mps8550.pdf
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SEMICONDUCTOR MPS8550TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORHIGH CURRENT APPLICATION. B CFEATUREComplementary to MPS8050.N DIM MILLIMETERSA 4.70 MAXEKB 4.80 MAXGMAXIMUM RATING (Ta=25)C 3.70 MAXDD 0.45CHARACTERISTIC SYMBOL RATING UNITE 1.00F 1.27VCBO -40 VCollector-Base VoltageG 0.85H 0.45VCEO -25 VCollector-Emitter Voltage _HJ 14.0
mps8598.pdf
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September 2007MPS8598PNP General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 68. TO-9211. Emitter 2. Base 3. CollectorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value UnitsVCBO Collector-Base Voltage 60 VVCEO Collector-Emitter V
mps8099 mps8599.pdf
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NPN - MPS8099; PNP -MPS8599Preferred Device Amplifier TransistorsVoltage and Current are Negativefor PNP Transistorshttp://onsemi.comFeaturesNPN PNP Pb-Free Packages are Available*COLLECTOR COLLECTOR3 3MAXIMUM RATINGS2 2BASE BASERating Symbol Value UnitCollector-Emitter Voltage VCEO 80 Vdc1 1Collector-Base Voltage VCBO 80 VdcEMITTER EMITTEREmitter-Base
mps8598 99.pdf
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Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyPNP SILICON PLANAR AMPLIFIER TRANSISTORS MPS8598MPS8599TO-92Plastic PackageCBEABSOLUTE MAXIMUM RATINGS(Ta=25C unless specified otherwise)DESCRIPTION SYMBOL MPS8598 MPS8599 UNITSVCEOCollector Emitter Voltage 60 80 VVCBOCollector Base Voltage 60 80 VVEBOEmitter Base Voltage 5
mps8599.pdf
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DIP Type TransistorsPNP TransistorsMPS8599 (KPS8599)TO-92Unit: mm+0.254.58 0.15 Features Collector Current Capability IC=-0.5A Collector Emitter Voltage VCEO=-80V0.46 0.10+0.101.27TYP 1.27TYP 0.38 0.051 2 3[1.27 0.20] [1.27 0.20]3.60 0.201. Emitter2. Base(R2.29)3. Collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Uni
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