MPSA13RLRAG Todos los transistores

 ..1. Size:78K  onsemi
 mpsa13rlrag.pdf

MPSA13, MPSA14 MPSA14 is a Preferred Device Darlington Transistors NPN Silicon Features http //onsemi.com Pb-Free Packages are Available* COLLECTOR 3 MAXIMUM RATINGS BASE 2 Rating Symbol Value Unit Collector-Emitter Voltage VCES 30 Vdc Collector-Base Voltage VCBO 30 Vdc EMITTER 1 Emitter-Base Voltage VEBO 10 Vdc Collector Current - Continuous IC 500 mAdc Total Device Dissipa

 5.1. Size:78K  onsemi
 mpsa13rlrmg.pdf

MPSA13, MPSA14 MPSA14 is a Preferred Device Darlington Transistors NPN Silicon Features http //onsemi.com Pb-Free Packages are Available* COLLECTOR 3 MAXIMUM RATINGS BASE 2 Rating Symbol Value Unit Collector-Emitter Voltage VCES 30 Vdc Collector-Base Voltage VCBO 30 Vdc EMITTER 1 Emitter-Base Voltage VEBO 10 Vdc Collector Current - Continuous IC 500 mAdc Total Device Dissipa

 5.2. Size:78K  onsemi
 mpsa13rlrpg.pdf

MPSA13, MPSA14 MPSA14 is a Preferred Device Darlington Transistors NPN Silicon Features http //onsemi.com Pb-Free Packages are Available* COLLECTOR 3 MAXIMUM RATINGS BASE 2 Rating Symbol Value Unit Collector-Emitter Voltage VCES 30 Vdc Collector-Base Voltage VCBO 30 Vdc EMITTER 1 Emitter-Base Voltage VEBO 10 Vdc Collector Current - Continuous IC 500 mAdc Total Device Dissipa

 8.1. Size:225K  motorola
 mpsa13 mpsa14.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MPSA13/D Darlington Transistors MPSA13 NPN Silicon MPSA14* *Motorola Preferred Device COLLECTOR 3 BASE 2 EMITTER 1 1 2 3 MAXIMUM RATINGS CASE 29 04, STYLE 1 TO 92 (TO 226AA) Rating Symbol Value Unit Collector Emitter Voltage VCES 30 Vdc Collector Base Voltage VCBO 30 Vdc Emitter Base Voltage VEBO 10 V

 8.2. Size:37K  fairchild semi
 mpsa13.pdf

MPSA13 MMBTA13 PZTA13 C C E E C B C TO-92 B SOT-23 B SOT-223 E Mark 1M NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 1.0 A. Sourced from Process 05. See MPSA14 for characteristics. Absolute Maximum Ratings* TA = 25 C unless otherwise noted Symbol Parameter Value Units VCES Collector-Emitter

 8.3. Size:306K  mcc
 mpsa13 mpsa14 to-92.pdf

 8.4. Size:78K  onsemi
 mpsa13zl1g.pdf

MPSA13, MPSA14 MPSA14 is a Preferred Device Darlington Transistors NPN Silicon Features http //onsemi.com Pb-Free Packages are Available* COLLECTOR 3 MAXIMUM RATINGS BASE 2 Rating Symbol Value Unit Collector-Emitter Voltage VCES 30 Vdc Collector-Base Voltage VCBO 30 Vdc EMITTER 1 Emitter-Base Voltage VEBO 10 Vdc Collector Current - Continuous IC 500 mAdc Total Device Dissipa

 8.5. Size:78K  onsemi
 mpsa13g.pdf

MPSA13, MPSA14 MPSA14 is a Preferred Device Darlington Transistors NPN Silicon Features http //onsemi.com Pb-Free Packages are Available* COLLECTOR 3 MAXIMUM RATINGS BASE 2 Rating Symbol Value Unit Collector-Emitter Voltage VCES 30 Vdc Collector-Base Voltage VCBO 30 Vdc EMITTER 1 Emitter-Base Voltage VEBO 10 Vdc Collector Current - Continuous IC 500 mAdc Total Device Dissipa

 8.6. Size:10K  utc
 mpsa13.pdf

UTC MPSA13 NPN EPITAXIAL SILICON TRANSISTOR DARLINGTON TRANSISTOR 1 DESCRIPTION TO-92 The UTC MPSA13 is a darlington transistor. 1 FEATURES *Collector-Emitter Voltage Vces = 30V SOT-89 *Collector Dissipation Pc ( mas ) = 625 mW 1 SOT-23 TO-92 1 EMITTER 2 BASE 3 COLLECTOR SOT-89 1 EMITTER 2 COLLECTOR 3 BASE SOT-23 1 EMITTER 2 BASE 3 COLLECTOR ABSOLUTE MAXIMUM RATINGS ( Oper

 8.7. Size:167K  secos
 mpsa13-14.pdf

MPSA13 / 14 NPN Epitaxial Silicon Transistor RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free TO-92 FEATURES Darlington TRANSISTOR 1 Power dissipation 2 3 PCM 0.625 W (Tamb=25 ) 1 2 3 Collector current 1. EMITTER ICM 0.5 A 2. BASE Collector-base voltage 3 . COLLECTOR V(BR)CBO 30 V Operating and storage junction temperature range

 8.8. Size:293K  cdil
 mpsa13 14.pdf

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN EPITAXIAL PLANAR DARLINGTON TRANSISTORS MPSA 13 MPSA 14 TO-92 CBE C C B B E E ABSOLUTE MAXIMUM RATINGS. DESCRIPTION SYMBOL VALUE UNIT Collector -Emitter Voltage VCES 30 V Collector -Base Voltage VCBO 30 V Emitter -Base Voltage VEBO 10 V Collector Current -Continuous IC 500 mA Power D

 8.9. Size:456K  jiangsu
 mpsa13.pdf

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO 92 MPSA13 TRANSISTOR (NPN) 1.EMITTER FEATURES 2.BASE Darlington Transistors 3.COLLECTOR Equivalent Circuit MPSA13=Device code MPS Solid dot=Green molding compound device, if none,the normal device XXX=Code

 8.10. Size:164K  kec
 mpsa13 mpsa14.pdf

SEMICONDUCTOR MPSA13/14 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATIONS. DARLINGTON TRANSISTOR. B C N DIM MILLIMETERS A 4.70 MAX E K B 4.80 MAX G C 3.70 MAX D D 0.45 E 1.00 MAXIMUM RATING (Ta=25 ) F 1.27 G 0.85 CHARACTERISTIC SYMBOL RATING UNIT H 0.45 _ H J 14.00 + 0.50 VCBO Collector-Base Voltage 30 V K 0.55 MAX F F L 2.30 VCES Collecto

 8.11. Size:487K  wietron
 mpsa13-14.pdf

MPSA13/MPSA14 Plastic-Encapsulate Transistros NPN Darlington Transistor 1. EMITTER 2. BASE 3. COLLECTOR 1 2 3 TO-92 Maximum Ratings(TA=25 C Unless O therwise Specified) Rating Symbol Value Unit VCEO Collector-Emitter Voltage 30 V VCBO Collector-base Voltage 30 V VEBO 10 V Emitter-base Voltage mA Collector Current IC 500 Total Power Dissipation(TA=25 C) 0.625 PD W

 8.12. Size:202K  first silicon
 mpsa13.pdf

SEMICONDUCTOR MPSA13 TECHNICAL DATA MPSA13 TRANSISTOR (NPN) B C FEATURES Darlington Transistors DIM MILLIMETERS A 4.70 MAX E B 4.80 MAX G C 3.70 MAX D D 0.55 MAX E 1.00 F 1.27 MAXIMUM RATINGS (Ta=25 unless otherwise noted) G 0.85 H 0.45 _ H J 14.00 + 0.50 Symbol Parameter Value Units L 2.30 F F VCBO Collector-Base Voltage 30 V M 0.51 MAX VCEO Collector-Emitter V