MPSA14G Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MPSA14G
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.625 W
Tensión colector-base (Vcb): 30 V
Tensión colector-emisor (Vce): 30 V
Tensión emisor-base (Veb): 10 V
Corriente del colector DC máxima (Ic): 0.5 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 125 MHz
Ganancia de corriente contínua (hFE): 20000
Encapsulados: TO92
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MPSA14G datasheet
mpsa14g.pdf
MPSA13, MPSA14 MPSA14 is a Preferred Device Darlington Transistors NPN Silicon Features http //onsemi.com Pb-Free Packages are Available* COLLECTOR 3 MAXIMUM RATINGS BASE 2 Rating Symbol Value Unit Collector-Emitter Voltage VCES 30 Vdc Collector-Base Voltage VCBO 30 Vdc EMITTER 1 Emitter-Base Voltage VEBO 10 Vdc Collector Current - Continuous IC 500 mAdc Total Device Dissipa
mpsa13 mpsa14.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MPSA13/D Darlington Transistors MPSA13 NPN Silicon MPSA14* *Motorola Preferred Device COLLECTOR 3 BASE 2 EMITTER 1 1 2 3 MAXIMUM RATINGS CASE 29 04, STYLE 1 TO 92 (TO 226AA) Rating Symbol Value Unit Collector Emitter Voltage VCES 30 Vdc Collector Base Voltage VCBO 30 Vdc Emitter Base Voltage VEBO 10 V
mpsa14 4.pdf
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 MPSA14 NPN Darlington transistor 1999 Apr 27 Product specification Supersedes data of 1997 Apr 24 Philips Semiconductors Product specification NPN Darlington transistor MPSA14 FEATURES PINNING High current (max. 500 mA) PIN DESCRIPTION Low voltage (max. 30 V) 1 collector High DC current gain (min. 10000). 2 b
Otros transistores... MPSA06RLRMG , MPSA06RLRPG , MPSA113 , MPSA13G , MPSA13RLRAG , MPSA13RLRMG , MPSA13RLRPG , MPSA13ZL1G , 2SC5200 , MPSA14RLRAG , MPSA14RLRPG , MPSA18RLRAG , MPSA18RLRMG , MPSA29G , MPSA29RLRPG , MPSA42-BK , MPSA42M .
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