MPSA14G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MPSA14G
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.625 W
Tensión colector-base (Vcb): 30 V
Tensión colector-emisor (Vce): 30 V
Tensión emisor-base (Veb): 10 V
Corriente del colector DC máxima (Ic): 0.5 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 125 MHz
Ganancia de corriente contínua (hfe): 20000
Paquete / Cubierta: TO92
Búsqueda de reemplazo de transistor bipolar MPSA14G
MPSA14G Datasheet (PDF)
mpsa14g.pdf
MPSA13, MPSA14MPSA14 is a Preferred DeviceDarlington TransistorsNPN SiliconFeatureshttp://onsemi.com Pb-Free Packages are Available*COLLECTOR 3MAXIMUM RATINGS BASE2Rating Symbol Value UnitCollector-Emitter Voltage VCES 30 VdcCollector-Base Voltage VCBO 30 VdcEMITTER 1Emitter-Base Voltage VEBO 10 VdcCollector Current - Continuous IC 500 mAdcTotal Device Dissipa
mpsa13 mpsa14.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MPSA13/DDarlington TransistorsMPSA13NPN SiliconMPSA14**Motorola Preferred DeviceCOLLECTOR 3BASE2EMITTER 1123MAXIMUM RATINGSCASE 2904, STYLE 1TO92 (TO226AA)Rating Symbol Value UnitCollectorEmitter Voltage VCES 30 VdcCollectorBase Voltage VCBO 30 VdcEmitterBase Voltage VEBO 10 V
mpsa14 4.pdf
DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D186MPSA14NPN Darlington transistor1999 Apr 27Product specificationSupersedes data of 1997 Apr 24Philips Semiconductors Product specificationNPN Darlington transistor MPSA14FEATURES PINNING High current (max. 500 mA)PIN DESCRIPTION Low voltage (max. 30 V)1 collector High DC current gain (min. 10000).2 b
mpsa13 mpsa14 to-92.pdf
MCCMPSA13TM Micro Commercial Components20736 Marilla Street ChatsworthMicro Commercial ComponentsMPSA14CA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features Capable of 1.5Watts of Power Dissipation.NPN Silicon Collector-current 500mA Collector-base Voltage 30VDarlington Transistor Operating and storage junction temperature range: -55OC to +150OC
mpsa14rlrpg.pdf
MPSA13, MPSA14MPSA14 is a Preferred DeviceDarlington TransistorsNPN SiliconFeatureshttp://onsemi.com Pb-Free Packages are Available*COLLECTOR 3MAXIMUM RATINGS BASE2Rating Symbol Value UnitCollector-Emitter Voltage VCES 30 VdcCollector-Base Voltage VCBO 30 VdcEMITTER 1Emitter-Base Voltage VEBO 10 VdcCollector Current - Continuous IC 500 mAdcTotal Device Dissipa
mpsa14rlrag.pdf
MPSA13, MPSA14MPSA14 is a Preferred DeviceDarlington TransistorsNPN SiliconFeatureshttp://onsemi.com Pb-Free Packages are Available*COLLECTOR 3MAXIMUM RATINGS BASE2Rating Symbol Value UnitCollector-Emitter Voltage VCES 30 VdcCollector-Base Voltage VCBO 30 VdcEMITTER 1Emitter-Base Voltage VEBO 10 VdcCollector Current - Continuous IC 500 mAdcTotal Device Dissipa
mpsa14.pdf
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO 92 MPSA14 TRANSISTOR (NPN)1.EMITTERFEATURES 2.BASE Darlington Transistor3.COLLECTOR Equivalent Circuit MPSA14=Device code MPS Solid dot=Green molding compound device, if none,the normal deviceXXX=Code
mpsa13 mpsa14.pdf
SEMICONDUCTOR MPSA13/14TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATIONS. DARLINGTON TRANSISTOR.B CN DIM MILLIMETERSA 4.70 MAXEKB 4.80 MAXGC 3.70 MAXDD 0.45E 1.00MAXIMUM RATING (Ta=25 )F 1.27G 0.85CHARACTERISTIC SYMBOL RATING UNITH 0.45_HJ 14.00 + 0.50VCBOCollector-Base Voltage 30 VK 0.55 MAXF FL 2.30VCESCollecto
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