MPSA18RLRMG . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: MPSA18RLRMG
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

   Disipación total del dispositivo (Pc): 0.63 W
   Tensión colector-base (Vcb): 45 V
   Tensión colector-emisor (Vce): 45 V
   Tensión emisor-base (Veb): 6.5 V
   Corriente del colector DC máxima (Ic): 0.2 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   Transición de frecuencia (ft): 100 MHz
   Ganancia de corriente contínua (hfe): 500
   Paquete / Cubierta: TO92

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MPSA18RLRMG Datasheet (PDF)

..1. Size:80K onsemi
mpsa18rlrmg.pdf

MPSA18Preferred Device Low Noise TransistorNPN SiliconFeatures These are Pb-Free Devices*http://onsemi.comCOLLECTOR3MAXIMUM RATINGS2Rating Symbol Value Unit BASECollector-Emitter Voltage VCEO 45 Vdc1EMITTERCollector-Base Voltage VCBO 45 VdcEmitter-Base Voltage VEBO 6.5 VdcCollector Current - Continuous IC 200 mAdcTO-92Total Device Dissipation @ TA = 25

5.1. Size:80K onsemi
mpsa18rlrag.pdf

7.1. Size:278K motorola
mpsa18 mpsa18re.pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MPSA18/DLow Noise TransistorNPN SiliconMPSA18Motorola Preferred DeviceCOLLECTOR32BASE1EMITTER123MAXIMUM RATINGSCASE 2904, STYLE 1Rating Symbol Value UnitTO92 (TO226AA)CollectorEmitter Voltage VCEO 45 VdcCollectorBase Voltage VCBO 45 VdcEmitterBase Voltage VEBO 6.5 VdcColle

8.1. Size:293K fairchild semi
mpsa18.pdf

Discrete POWER & SignalTechnologiesMPSA18C TO-92BENPN General Purpose AmplifierThis device is designed for low noise, high gain, applications atcollector currents from 1 A to 50 mA. Sourced from Process07. See 2N5088 for characteristics.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 45 VV

8.2. Size:79K onsemi
mpsa18.pdf