MPSA44-BK . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

MPSA44-BKMPSA44-BKHigh voltage Si-epitaxial planar transistorsNPN NPNHochspannungs-Si-Epitaxial Planar-TransistorenVersion 2011-07-07Power dissipation 625 mW0.1Verlustleistung4.6Plastic case TO-92Kunststoffgehuse (10D3)Weight approx. 0.18 gGewicht ca.E B CPlastic material has UL classification 94V-0Gehusematerial UL94V-0 klassifiziertSpecial packaging bul

MPSA44Preferred Device High Voltage TransistorNPN SiliconFeatureshttp://onsemi.com Pb-Free Packages are Available*COLLECTORMAXIMUM RATINGS3Rating Symbol Value UnitCollector -Emitter Voltage VCEO 400 Vdc2BASECollector -Base Voltage VCBO 500 VdcEmitter -Base Voltage VEBO 6.0 Vdc1Collector Current - Continuous IC 300 mAdcEMITTERTotal Device Dissipation @ TA

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MPSA44/DHigh Voltage TransistorNPN SiliconMPSA44Motorola Preferred DeviceCOLLECTOR32BASE1EMITTER1MAXIMUM RATINGS23Rating Symbol Value UnitCASE 2904, STYLE 1CollectorEmitter Voltage VCEO 400 VdcTO92 (TO226AA)CollectorBase Voltage VCBO 500 VdcEmitterBase Voltage VEBO 6.0 Vdc

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D186MPSA44NPN high-voltage transistor1999 Apr 27Product specificationSupersedes data of 1998 Nov 26Philips Semiconductors Product specificationNPN high-voltage transistor MPSA44FEATURES PINNING Low current (max. 300 mA)PIN DESCRIPTION High voltage (max. 400 V).1 collector2 baseAPPLICATIONS3 emitter

UNISONIC TECHNOLOGIES CO., LTD MPSA44H NPN SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR FEATURES * Collector-Emitter Voltage:* V =400V CEO* Collector Current up to 300mA ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 MPSA44HL-AB3-R MPSA44HG-AB3-R SOT-89 B C E Tape ReelMPSA44HL-T92-B MPSA44HG-T92-B TO-92 E B C Tape Box

UNISONIC TECHNOLOGIES CO., LTD MPSA44/45 NPN SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR 11 FEATURES TO-252SOT-89* Collector-Emitter Voltage: * V =400V (UTC MPSA44) CEO* V =350V (UTC MPSA45) CEO* Collector Current up to 300mA 11TO-92NLTO-921TO-126 ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3

UTC MPSA 44/ 45 NPN EPITAXIAL SILICONTRANSISTORHIGH VOLTAGE TRANSISTORFEATURES*Collector-Emitter voltage:VCEO=400V(MPSA44)VCEO=350V(MPSA45)*Collector current up to 300mA*Complement to MPSA94/93*Collector Dissipation:Pc(max)=625mW APPLICATION*Telephone switchingTO-92*High voltage switch1:EMITTER 2:BASE 3:COLLECTORABSOLUTE MAXIMUM RATINGS ( Operating temperature ra

MPSA44 NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURES High Voltage NPN Transistor G HEmitterJMillimeterREF. A DMin. Max.A 4.40 4.70BB 4.30 4.70C 12.70 -Base KD 3.30 3.81E 0.36 0.56F 0.36 0.51 E C F G 1.27 TYP.Collector

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN SILICON PLANAR EPITAXIAL TRANSISTORS MPSA44MPSA45TO-92Plastic PackageCBEHigh Voltage TransistorsComplementary of MPSA44 is MPSA94ABSOLUTE MAXIMUM RATINGSDESCRIPTION SYMBOL MPSA44 MPSA45 UNITSVCBOCollector Base Voltage 500 400 VVCEOCollector Emitter Voltage 400 350 VVEBO

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate TransistorsTO 92 MPSA44 TRANSISTOR (NPN)1.EMITTERFEATURES 2.BASE High Breakdown Voltage3.COLLECTOR Equivalent Circuit FE

SEMICONDUCTOR MPSA44/45TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORHIGH VOLTAGE APPLICATION.B CFEATURES High Breakdown Voltage.Collector Power Dissipation : PC=625mW.N DIM MILLIMETERSA 4.70 MAXEKB 4.80 MAXGC 3.70 MAXDMAXIMUM RATING (Ta=25 )D 0.45E 1.00CHARACTERISTIC SYMBOL RATING UNITF 1.27G 0.85MPSA44 500H 0.45Collector-Base_VCBO HV J 14.00

MPSA44High-Voltage NPN TransistorsTO-921. EMITTER122. BASE33. COLLECTORABSOLUTE MAXIMUM RATINGS (Ta=25 C)Rating SymbolValue UnitCollector-Emitter Voltage VCEO 400 VdcCollector-Base Voltage VCBO 400VdcEmitter-Base VOltage VEBO5.0 VdcCollector Current IC200 mAdcPD 0.625Total Device Dissipation T =25 C WAJunction Temperature T 150j CStorage, Temper

Spec. No. : HE6358HI-SINCERITYIssued Date : 1993.01.15Revised Date : 2004.07.21MICROELECTRONICS CORP.Page No. : 1/4HMPSA44NPN EPITAXIAL PLANAR TRANSISTORDescriptionThe HMPSA44 is designed for application that requires high voltage.FeaturesTO-92 High Breakdown Voltage: 400(Min) at IC=1mA High Current Gain: IC=300mA at 25C Complementary to HMPSA94Absolute

Shenzhen Tuofeng Semiconductor Technology Co., Ltd TO-92 Plastic-Encapsulate Transistors TRANSISTOR (NPN) MPSA44 TO-92 FEATURES High voltage 1. EMITTER 2. BASE MAXIMUM RATINGS* TA=25 unless otherwise noted 3. COLLECTOR Symbol Parameter Value Units 1 2 3 VCBO Collector-Base Voltage 400 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 5 V Co

MPSA44 Rev.E Mar.-2016 DATA SHEET / Descriptions TO-92 NPN Silicon NPN transistor in a TO-92 Plastic Package. / Features High voltage. / Applications High voltage control circuit. / Equivalent Circuit / Pinning 1 2 3 PIN1Collector PIN

MPSA44 NPN Silicon Epitaxial Planar Transistor for high voltage switching and amplifier applications. As complementary type the PNP transistor MPSA94 is recommended. On special request, these transistors can be manufactured in different pin configurations. 1. Emitter 2. Base 3. Collector TO-92 Plastic PackageOAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit

SEMICONDUCTOR MPSA44TECHNICAL DATA MPSA44 TRANSISTOR (NPN) B CFEATURES High Breakdown Voltage DIM MILLIMETERSA 4.70 MAXEB 4.80 MAX GC 3.70 MAXDD 0.55 MAXE 1.00F 1.27G 0.85H 0.45_HJ 14.00 + 0.50MAXIMUM RATINGS (Ta=25 unless otherwise noted) L 2.30F FM 0.51 MAXSymbol Parameter Value Unit 1 2 3 1. EMITTERVCBO Collector-Base Voltage 500 V