MRF1000MB Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MRF1000MB
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 7 W
Tensión colector-base (Vcb): 50 V
Tensión colector-emisor (Vce): 20 V
Tensión emisor-base (Veb): 3.5 V
Corriente del colector DC máxima (Ic): 0.2 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 1250 MHz
Capacitancia de salida (Cc): 2 pF
Ganancia de corriente contínua (hFE): 10
Encapsulados: 332A-03
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MRF1000MB datasheet
mrf1000ma mrf1000mb.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF1000MA/D The RF Line Microwave Pulse MRF1000MA Power Transistors MRF1000MB . . . designed for Class A and AB common emitter amplifier applications in the low power stages of IFF, DME, TACAN, radar transmitters, and CW systems. Guaranteed Performance @ 1090 MHz, 18 Vdc Class A Output Power = 0.2 Watt 0.7 W, 96
mrf1000mb.pdf
MRF1000MB Class A, Class AB Microwave Power Silicon NPN Transistor M/A-COM Products Released - Rev. 053007 0.7 W, 960 1215 MHz, 18V Features Product Image Guaranteed performance @ 1090 MHz, 18 Vdc Class A Output power 0.2W Minimum gain 10dB 100% tested for load mismatch at all phase angles with 10 1 VSWR Industry standard package Nitride
mrf1000m.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF1000MA/D The RF Line Microwave Pulse MRF1000MA Power Transistors MRF1000MB . . . designed for Class A and AB common emitter amplifier applications in the low power stages of IFF, DME, TACAN, radar transmitters, and CW systems. Guaranteed Performance @ 1090 MHz, 18 Vdc Class A Output Power = 0.2 Watt 0.7 W, 96
mrf10005.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF10005/D The RF Line Microwave Power Transistor MRF10005 . . . designed for CW and long pulsed common base amplifier applications, such as JTIDS and Mode S, in the 0.96 to 1.215 GHz frequency range at high overall duty cycles. Guaranteed Performance @ 1.215 GHz, 28 Vdc Output Power = 5.0 Watts CW Minimum Gain = 8.5 d
Otros transistores... MPSW51G , MQ2484HXV , MQ3251AHXV , MQ3468HXV , MQ6002HXV , MQ7003 , MQ918HXV , MRF10005 , TIP31 , MRF1001A , MRF1002MA , MRF1002MB , MRF10031 , MRF1004MA , MRF1004MB , MRF10120 , MRF10150 .
History: 2N3501L
History: 2N3501L
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