MRF449A
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MRF449A
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 60
W
Tensión colector-base (Vcb): 40
V
Tensión colector-emisor (Vce): 20
V
Tensión emisor-base (Veb): 4
V
Corriente del colector DC máxima (Ic): 4
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 30
MHz
Capacitancia de salida (Cc): 140
pF
Ganancia de corriente contínua (hfe): 10
Paquete / Cubierta: 145A-09
Búsqueda de reemplazo de transistor bipolar MRF449A
MRF449A
Datasheet (PDF)
..1. Size:355K hgsemi
mrf449a.pdf
HG RF POWER TRANSISTORMRF449ASemiconductorsHGROHS Compliance,Silicon NPN POWER TRANSISTORNote : Above parameters , ratings , limits and conditions are subject to change.Sep. 1998www.HGSemi.comHG RF POWER TRANSISTORMRF449ASemiconductorsHGROHS Compliance,Silicon NPN POWER TRANSISTORNote : Above parameters , ratings , limits and conditions are subject to change.Sep. 19
9.1. Size:85K motorola
mrf4427r2.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF4427/DThe RF LineNPN SiliconMRF4427R2RF Low Power TransistorDesigned for amplifier, frequency multiplier, or oscillator applications inindustrial equipment constructed with surface mount components. Suitable foruse as output driver or predriver stages in VHF and UHF equipment. Low Cost SORF Plastic Surface
9.2. Size:107K motorola
mrf4427.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF4427/DThe RF LineNPN SiliconMRF4427RF Low Power Transistor. . . designed for amplifier, frequency multiplier, or oscillator applications inindustrial equipment constructed with surface mount components. Suitable foruse as output driver or predriver stages in VHF and UHF equipment. Low Cost SORF Plastic Surf
9.3. Size:85K motorola
mrf4427rev8.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF4427/DThe RF LineNPN SiliconMRF4427R2RF Low Power TransistorDesigned for amplifier, frequency multiplier, or oscillator applications inindustrial equipment constructed with surface mount components. Suitable foruse as output driver or predriver stages in VHF and UHF equipment. Low Cost SORF Plastic Surface
9.4. Size:107K motorola
mrf4427r.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF4427/DThe RF LineNPN SiliconMRF4427RF Low Power Transistor. . . designed for amplifier, frequency multiplier, or oscillator applications inindustrial equipment constructed with surface mount components. Suitable foruse as output driver or predriver stages in VHF and UHF equipment. Low Cost SORF Plastic Surf
9.5. Size:108K motorola
mrf448.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF448/DThe RF LineNPN SiliconMRF448RF Power TransistorDesigned primarily for highvoltage applications as a highpower linearamplifier from 2.0 to 30 MHz. Ideal for marine and base station equipment. Specified 50 Volt, 30 MHz CharacteristicsOutput Power = 250 W250 W, 30 MHzMinimum Gain = 12 dBRF POWER
9.6. Size:108K motorola
mrf448re.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF448/DThe RF LineNPN SiliconMRF448RF Power TransistorDesigned primarily for highvoltage applications as a highpower linearamplifier from 2.0 to 30 MHz. Ideal for marine and base station equipment. Specified 50 Volt, 30 MHz CharacteristicsOutput Power = 250 W250 W, 30 MHzMinimum Gain = 12 dBRF POWER
9.7. Size:197K macom
mrf448.pdf
MRF448 The RF Line NPN Silicon Power Transistor M/A-COM Products Released - Rev. 07.07 250W, 30MHz, 50V Designed primarily for highvoltage applications as a highpower Product Image linear amplifiers from 2.0 to 30 MHz. Ideal for marine and base station equipment. Specified 50 V, 30 MHz characteristics Output power = 250 W Minimum gain = 12 dB Efficiency = 45
9.8. Size:48K eleflow
mrf448.pdf
ELEFLOW TECHNOLOGIES MRF448www.eleflow.com NPN Silicon RF power transistor MRF448 Description: MRF448 is designed primarily for highvoltage applications as a highpower linear amplifier from 2.0 to 30 MHz. Ideal for marine and base station equipment. Features: Specified 50 Volt, 30 MHz Characteristics: Output Power = 250 W, Minimum Gain = 1, Efficiency = 45% Maximum Rat
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