MRF450A Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MRF450A
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 115 W
Tensión colector-base (Vcb): 40 V
Tensión colector-emisor (Vce): 20 V
Tensión emisor-base (Veb): 4 V
Corriente del colector DC máxima (Ic): 7.5 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 30 MHz
Capacitancia de salida (Cc): 200 pF
Ganancia de corriente contínua (hfe): 10
Paquete / Cubierta: SOT122
Búsqueda de reemplazo de MRF450A
MRF450A datasheet
mrf450a.pdf
HG RF POWER TRANSISTOR MRF450A Semiconductors HG ROHS Compliance,Silicon NPN POWER TRANSISTOR Note Above parameters , ratings , limits and conditions are subject to change. Sep. 1998 www.HGSemi.com HG RF POWER TRANSISTOR MRF450A Semiconductors HG ROHS Compliance,Silicon NPN POWER TRANSISTOR Note Above parameters , ratings , limits and conditions are subject to change. Sep. 19
mrf454re.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF454/D The RF Line NPN Silicon MRF454 RF Power Transistor Designed for power amplifier applications in industrial, commercial and amateur radio equipment to 30 MHz. Specified 12.5 Volt, 30 MHz Characteristics Output Power = 80 Watts 80 W, 30 MHz Minimum Gain = 12 dB RF POWER Efficiency = 50% TRANSISTOR NPN S
mrf455re.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF455/D The RF Line NPN Silicon MRF455 RF Power Transistor . . . designed for power amplifier applications in industrial, commercial and amateur radio equipment to 30 MHz. Specified 12.5 Volt, 30 MHz Characteristics Output Power = 60 Watts 60 W, 30 MHz Minimum Gain = 13 dB RF POWER Efficiency = 55% TRANSISTOR
mrf454rev1.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF454/D The RF Line NPN Silicon MRF454 RF Power Transistor Designed for power amplifier applications in industrial, commercial and amateur radio equipment to 30 MHz. Specified 12.5 Volt, 30 MHz Characteristics Output Power = 80 Watts 80 W, 30 MHz Minimum Gain = 12 dB RF POWER Efficiency = 50% TRANSISTOR NPN S
Otros transistores... MRF392 , MRF393 , MRF410 , MRF412 , MRF427A , MRF429 , MRF448 , MRF449A , S9018 , MRF453A , MRF466 , MRF477 , MRF479 , MRF486 , MRF492 , MRF492A , MRF497 .
History: 2N502B | KTC3192
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550
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