MRF555 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MRF555 📄📄
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 3 W
Tensión colector-base (Vcb): 30 V
Tensión colector-emisor (Vce): 16 V
Tensión emisor-base (Veb): 3 V
Corriente del colector DC máxima (Ic): 0.5 A
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 470 MHz
Capacitancia de salida (Cc): 5.5 pF
Ganancia de corriente contínua (hFE): 50
Encapsulados: TO50
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MRF555 datasheet
..1. Size:99K motorola
mrf555.pdf 

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF555/D The RF Line NPN Silicon MRF555 RF Low Power Transistor Designed primarily for wideband large signal predriver stages in the UHF frequency range. Specified @ 12.5 V, 470 MHz Characteristics @ Pout = 1.5 W Common Emitter Power Gain = 12.5 dB (Typ) 1.5 W, 470 MHz Efficiency 60% (Typ) RF LOW POWER Cost Effe
0.1. Size:99K motorola
mrf555re.pdf 

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF555/D The RF Line NPN Silicon MRF555 RF Low Power Transistor Designed primarily for wideband large signal predriver stages in the UHF frequency range. Specified @ 12.5 V, 470 MHz Characteristics @ Pout = 1.5 W Common Emitter Power Gain = 12.5 dB (Typ) 1.5 W, 470 MHz Efficiency 60% (Typ) RF LOW POWER Cost Effe
9.1. Size:91K motorola
mrf557re.pdf 

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF557/D The RF Line NPN Silicon MRF557 RF Low Power Transistor Designed primarily for wideband large signal predriver stages in the 800 MHz frequency range. Specified @ 12.5 V, 870 MHz Characteristics Output Power = 1.5 W 1.5 W, 870 MHz Minimum Gain = 8.0 dB RF LOW POWER Efficiency 60% (Typ) TRANSISTOR Cost E
9.2. Size:91K motorola
mrf557.pdf 

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF557/D The RF Line NPN Silicon MRF557 RF Low Power Transistor Designed primarily for wideband large signal predriver stages in the 800 MHz frequency range. Specified @ 12.5 V, 870 MHz Characteristics Output Power = 1.5 W 1.5 W, 870 MHz Minimum Gain = 8.0 dB RF LOW POWER Efficiency 60% (Typ) TRANSISTOR Cost E
9.3. Size:94K motorola
mrf553.pdf 

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF553/D The RF Line NPN Silicon MRF553 RF Low Power Transistor Designed primarily for wideband large signal predriver stages in the VHF frequency range. Specified @ 12.5 V, 175 MHz Characteristics Output Power = 1.5 W 1.5 W, 175 MHz Minimum Gain = 11.5 dB RF LOW POWER Efficiency 60% (Typ) TRANSISTOR Cost Effe
9.4. Size:94K motorola
mrf553re.pdf 

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF553/D The RF Line NPN Silicon MRF553 RF Low Power Transistor Designed primarily for wideband large signal predriver stages in the VHF frequency range. Specified @ 12.5 V, 175 MHz Characteristics Output Power = 1.5 W 1.5 W, 175 MHz Minimum Gain = 11.5 dB RF LOW POWER Efficiency 60% (Typ) TRANSISTOR Cost Effe
9.5. Size:67K motorola
mrf5583r.pdf 

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF5583/D The RF Line PNP Silicon MRF5583 High-Frequency Transistor . . . designed for amplifier, oscillator or frequency multiplier applications in industrial equipment. Suitable for use as a Class A, B or C output driver or pre driver stages in VHF and UHF. Low Cost SORF Plastic Surface Mount Package IC = 500 mA
9.6. Size:157K motorola
mrf559re.pdf 

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF559/D The RF Line NPN Silicon MRF559 High-Frequency Transistor . . . designed for UHF linear and large signal amplifier applications. Specified 12.5 Volt, 870 MHz Characteristics Output Power = 0.5 Watts Minimum Gain = 8.0 dB 0.5 W, 870 MHz Efficiency 50% HIGH FREQUENCY S Parameter Data From 250 MHz t
9.7. Size:124K motorola
mrf559.pdf 

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF559/D The RF Line NPN Silicon MRF559 High-Frequency Transistor . . . designed for UHF linear and large signal amplifier applications. Specified 12.5 Volt, 870 MHz Characteristics Output Power = 0.5 Watts Minimum Gain = 8.0 dB 0.5 W, 870 MHz Efficiency 50% HIGH FREQUENCY S Parameter Data From 250 MHz t
9.8. Size:67K motorola
mrf5583.pdf 

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF5583/D The RF Line PNP Silicon MRF5583 High-Frequency Transistor . . . designed for amplifier, oscillator or frequency multiplier applications in industrial equipment. Suitable for use as a Class A, B or C output driver or pre driver stages in VHF and UHF. Low Cost SORF Plastic Surface Mount Package IC = 500 mA
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