MSD602-RT1 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MSD602-RT1 📄📄
Código: WRx
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.2 W
Tensión colector-base (Vcb): 60 V
Tensión colector-emisor (Vce): 50 V
Tensión emisor-base (Veb): 7 V
Corriente del colector DC máxima (Ic): 0.5 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 180 MHz
Capacitancia de salida (Cc): 15 pF
Ganancia de corriente contínua (hFE): 40
Encapsulados: SOT346
📄📄 Copiar
Búsqueda de reemplazo de MSD602-RT1
- Selecciónⓘ de transistores por parámetros
MSD602-RT1 datasheet
msd602-rt1.pdf
MSD602-RT1G, SMSD602-RT1G Preferred Device NPN General Purpose Amplifier Transistor Surface Mount http //onsemi.com Features AEC-Q101 Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring Unique SC-59 Site and Control Change Requirements CASE 318D These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS STYLE 1 Compliant* COLLECTOR
msd602-rt1-d.pdf
MSD602-RT1 Preferred Device NPN General Purpose Amplifier Transistor Surface Mount Features http //onsemi.com Pb-Free Packages are Available COLLECTOR 3 MAXIMUM RATINGS (TA = 25 C) Rating Symbol Value Unit Collector-Base Voltage V(BR)CBO 60 Vdc Collector-Emitter Voltage V(BR)CEO 50 Vdc Emitter-Base Voltage V(BR)EBO 7.0 Vdc 2 1 Collector Current - Continuous IC 500 mAdc BA
msd602-rt1g.pdf
MSD602-RT1G NPN General Purpose Amplifier Transistor Surface Mount Features http //onsemi.com S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS SC-59 Compliant* CASE 318D STYLE 1 MAXIMUM RATINGS (TA = 25 C) COLLECTOR Ratin
msd602-r.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MSD602 RT1/D NPN General Purpose Amplifier MSD602-RT1 Transistor Surface Mount COLLECTOR Motorola Preferred Device 3 3 2 2 1 1 BASE EMITTER MAXIMUM RATINGS (TA = 25 C) Rating Symbol Value Unit CASE 318D 03, STYLE 1 SC 59 Collector Base Voltage V(BR)CBO 60 Vdc Collector Emitter Voltage V(BR)CEO 50 Vdc Emi
Otros transistores... MSD1819A-R, MSD1819A-RT1G, MSD42, MSD42SWT1G, MSD42T1G, MSD42WT1G, MSD601-R, MSD601-RT1G, 8050, MSD602-RT1G, MSG36C42, MSG36D42, MSG36E31, MSG36E41, MSG43001, MSG43002, MSG43003
🌐 : EN ES РУ
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550
Popular searches
mosfet datasheet | irf3205 datasheet | irf5210 | mj15024 | 2n2219 | tip42c | 2sc2240 | bc547 transistor equivalent




