MSD602-RT1 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: MSD602-RT1
   Código: WRx
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

   Disipación total del dispositivo (Pc): 0.2 W
   Tensión colector-base (Vcb): 60 V
   Tensión colector-emisor (Vce): 50 V
   Tensión emisor-base (Veb): 7 V
   Corriente del colector DC máxima (Ic): 0.5 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   Transición de frecuencia (ft): 180 MHz
   Capacitancia de salida (Cc): 15 pF
   Ganancia de corriente contínua (hfe): 40
   Paquete / Cubierta: SOT346

Búsqueda de reemplazo de transistor bipolar MSD602-RT1

MSD602-RT1 Datasheet (PDF)

..1. Size:87K onsemi
msd602-rt1.pdf

MSD602-RT1G,SMSD602-RT1GPreferred Device NPN General PurposeAmplifier TransistorSurface Mounthttp://onsemi.comFeatures AEC-Q101 Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring UniqueSC-59Site and Control Change RequirementsCASE 318D These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSSTYLE 1Compliant*COLLECTOR

0.1. Size:42K onsemi
msd602-rt1-d.pdf

MSD602-RT1Preferred Device NPN General PurposeAmplifier TransistorSurface MountFeatureshttp://onsemi.com Pb-Free Packages are AvailableCOLLECTOR3MAXIMUM RATINGS (TA = 25C)Rating Symbol Value UnitCollector-Base Voltage V(BR)CBO 60 VdcCollector-Emitter Voltage V(BR)CEO 50 VdcEmitter-Base Voltage V(BR)EBO 7.0 Vdc2 1Collector Current - Continuous IC 500 mAdcBA

0.2. Size:58K onsemi
msd602-rt1g.pdf

MSD602-RT1GNPN General PurposeAmplifier TransistorSurface MountFeatureshttp://onsemi.com S Prefix for Automotive and Other Applications Requiring UniqueSite and Control Change Requirements; AEC-Q101 Qualified andPPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSSC-59Compliant*CASE 318DSTYLE 1MAXIMUM RATINGS (TA = 25C)COLLECTORRatin

6.1. Size:111K motorola
msd602-r.pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MSD602RT1/DNPN General Purpose AmplifierMSD602-RT1Transistor Surface MountCOLLECTORMotorola Preferred Device3322 11BASE EMITTERMAXIMUM RATINGS (TA = 25C)Rating Symbol Value Unit CASE 318D03, STYLE 1SC59CollectorBase Voltage V(BR)CBO 60 VdcCollectorEmitter Voltage V(BR)CEO 50 VdcEmi

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: BC817-40L | RN1101ACT

Liste

Recientemente añadidas las descripciónes de los transistores:

BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050