MT6L76FS . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

MT6L76FS TOSHIBA TRANSISTOR SILICON, SILICON GERMANIUM NPN EPITAXIAL PLANAR TYPE MT6L76FS VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS Unit: mm1.00.05Two devices are built in to the fine pich small mold package (6pins):fs6 0.80.05 0.10.050.10.05 It exsels in the buffer and oscillation use. 1 6Mounted Devices 52 Q1 Q243MT3S06FS MT3S106FSThree-pin f

MT6L77FS TOSHIBA TRANSISTOR SILICON, SILICON GERMANIUM NPN EPITAXIAL PLANAR TYPE MT6L77FS VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS Unit: mm1.00.05Two devices are built in to the fine pich small mold package (6pins):fs6 0.80.05 0.10.050.10.05 It exsels in the buffer and oscillation use. 1 6Mounted Devices 52 Q1 Q243MT3S11FS MT3S106FSThree-pin f

MT6L78FS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L78FS Unit: mmVHF~UHF Band Low-Noise Amplifier Applications 1.00.05Two devices are incorporated in a fine-pitch, small-mold package (6 pins): fS6. 0.80.05 0.10.050.10.05 Superior noise characteristics Superior performance in buffer and oscillator applications 1 62 54Mounted Devices 3

MT6L71FS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L71FS VHF~UHF Band Low-Noise Amplifier Applications Unit: mmTwo devices are incorporated in a fine-pitch, small-mold package (6 pins): fS6. 1.00.050.80.05 0.10.050.10.05 Superior noise characteristics Superior performance in buffer and oscillator applications 1 62 5Mounted Devices 43